Method of forming fine patterns using block copolymer

Patent metadata

Field	Value
Publication number	US-10047182-B2
Application number	US-201715712698-A
Country	US
Kind code	B2
Filing date	Sep 22, 2017
Priority date	Sep 23, 2016
Publication date	Aug 14, 2018
Grant date	Aug 14, 2018

Abstract

Provided is a method of forming fine patterns capable of minimizing LER and LWR to form high quality nanopatterns, by using a block copolymer having excellent etching selectivity. Provided is a block copolymer comprising a first block having a repeating unit represented by the following Chemical Formula 1, and a second block having a repeating unit represented by the following Chemical Formula 2:

First claim

What is claimed is:

1. A method of forming fine patterns comprising:
aligning a block copolymer coated on a substrate to be patterned; and selectively removing any one unit block of the patterned block copolymer,
wherein the block copolymer includes a first block having a repeating unit represented by the following Chemical Formula 1, and a second block having a repeating unit represented by the following Chemical Formula 3:

wherein
R 1 to R 4 are independently selected from the group consisting of —H, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkynyl group having 2 to 10 carbon atoms, a halogen group, a cyano group, an alkoxy group having 1 to 10 carbon atoms, an alkylthio group having 1 to 10 carbon atoms, an alkylcarbonyl group having 1 to 10 carbon atoms, and an alkenylcarbonyl group having 2 to 10 carbon atoms;
R 5 is selected from the group consisting of —H, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a cycloalkenyl group having 3 to 10 carbon atoms, an alkynyl group having 2 to 10 carbon atoms, a heterocycloalkyl group having 2 to 10 carbon atoms containing any one or two or more heteroatoms selected from O, N and S, an aryl group having 6 to 20 carbon atoms, a heteroaryl group having 4 to 20 carbon atoms containing any one or two or more heteroatoms selected from O, N and S, a halogen group, a cyano group, an alkoxy group having 1 to 10 carbon atoms, a cycloalkoxy group having 3 to 10 carbon atoms, an aryloxy group having 6 to 20 carbon atoms, an alkylthio group having 1 to 10 carbon atoms, a cycloalkylthio group having 3 to 10 carbon atoms, an arylthio group having 6 to 20 carbon atoms, an alkylcarbonyl group having 1 to 10 carbon atoms, an alkenylcarbonyl group having 2 to 10 carbon atoms, an arylcarbonyl group having 6 to 20 carbon atoms, a cycloalkylcarbonyl group having 3 to 10 carbon atoms, and a cycloalkenylcarbonyl group having 3 to 10 carbon atoms; and
in the block copolymer, when mole fractions of repeating units A, B and C in the block copolymer represented by the above Chemical Formulae 1 and 3 are l, n and m, respectively, 1 is 0.2 to 0.9, n is 0 to 0.6, m is 0.01 to 0.7, and l+n+m=1.

2. The method of claim 1 , wherein the first block is formed from an alkylmethacrylate-based compound.

3. The method of claim 1 , wherein the block copolymer forms vertically oriented lamella patterns.

4. The method of claim 1 , wherein the aligning is performed by thermal annealing, solvent annealing or a combination thereof.

5. The method of claim 1 , wherein the removing is performed by dry etching.

6. A method of forming fine patterns comprising: aligning a block copolymer coated on a substrate to be patterned; and selectively removing any one unit block of the patterned block copolymer,
wherein the block copolymer includes a first block having a repeating unit represented by the following Chemical Formula 1, and a second block having a repeating unit represented by the following Chemical Formula 2:

wherein
R 1 to R 4 are independently selected from the group consisting of —H, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkynyl group having 2 to 10 carbon atoms, a halogen group, a cyano group, an alkoxy group having 1 to 10 carbon atoms, an alkylthio group having 1 to 10 carbon atoms, an alkylcarbonyl group having 1 to 10 carbon atoms, and an alkenylcarbonyl group having 2 to 10 carbon atoms;
R 5 is selected from the group consisting of —H, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a cycloalkenyl group having 3 to 10 carbon atoms, an alkynyl group having 2 to 10 carbon atoms, a heterocycloalkyl group having 2 to 10 carbon atoms containing any one or two or more heteroatoms selected from O, N and S, an aryl group having 6 to 20 carbon atoms, a heteroaryl group having 4 to 20 carbon atoms containing any one or two or more heteroatoms selected from O, N and S, a halogen group, a cyano group, an alkoxy group having 1 to 10 carbon atoms, a cycloalkoxy group having 3 to 10 carbon atoms, an aryloxy group having 6 to 20 carbon atoms, an alkylthio group having 1 to 10 carbon atoms, a cycloalkylthio group having 3 to 10 carbon atoms, an arylthio group having 6 to 20 carbon atoms, an alkylcarbonyl group having 1 to 10 carbon atoms, an alkenylcarbonyl group having 2 to 10 carbon atoms, an arylcarbonyl group having 6 to 20 carbon atoms, a cycloalkylcarbonyl group having 3 to 10 carbon atoms, and a cycloalkenylcarbonyl group having 3 to 10 carbon atoms;
X 1 to X 5 are independently selected from the group consisting of —H, —F, an alkyl group having 1 to 10 carbon atoms substituted with at least one F, a cycloalkyl group having 3 to 10 carbon atoms substituted with at least one F, and an aryl group having 6 to 20 carbon atoms substituted with at least one F, with a proviso that all of them are not —H;
in the block copolymer, when mole fractions of repeating units A, B and C in the block copolymer represented by the above Chemical Formula 1 and 2 are l, n and m, respectively, 1 is 0.2 to 0.9, n is 0 to 0.6, m is 0.01 to 0.7, and l+n+m=1; and
the block copolymer has a x value at 25° C. of 0.01 to 0.26.

7. A method of forming fine patterns comprising: aligning a block copolymer coated on a substrate to be patterned; and selectively removing any one unit block of the patterned block copolymer,
wherein the block copolymer includes a first block having a repeating unit represented by the following Chemical Formula 1, and a second block having a repeating unit represented by the following Chemical Formula 2:

wherein
R 1 to R 4 are independently selected from the group consisting of —H, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkynyl group having 2 to 10 carbon atoms, a halogen group, a cyano group, an alkoxy group having 1 to 10 carbon atoms, an alkylthio group having 1 to 10 carbon atoms, an alkylcarbonyl group having 1 to 10 carbon atoms, and an alkenylcarbonyl group having 2 to 10 carbon atoms;
R 5 is selected from the group consisting of —H, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a cycloalkenyl group having 3 to 10 carbon atoms, an alkynyl group having 2 to 10 carbon atoms, a heterocycloalkyl group having 2 to 10 carbon atoms containing any one or two or more heteroatoms selected from O, N and S, an aryl group having 6 to 20 carbon atoms, a heteroaryl group having 4 to 20 carbon atoms containing any one or two or more heteroatoms selected from O, N and S, a halogen group, a cyano group, an alkoxy group having 1 to 10 carbon atoms, a cycloalkoxy group having 3 to 10 carbon atoms, an aryloxy group having 6 to 20 carbon atoms, an alkylthio group having 1 to 10 carbon atoms, a cycloalkylthio group having 3 to 10 carbon atoms, an arylthio group having 6 to 20 carbon atoms, an alkylcarbonyl group having 1 to 10 carbon atoms, an alkenylcarbonyl group having 2 to 10 carbon atoms, an arylcarbonyl group having 6 to 20 carbon atoms, a cycloalkylcarbonyl

Assignees

• Sk Innovation Co Ltd
• Korea Advanced Inst Sci & Tech

Inventors

• Ham Jin Su
• Jung Yeon Sik
• Kim Sun Young
• Hur Yoon Hyung
• Lee Kwang Kuk
• Song Seung Won

Classifications

• H10P50/287

  by chemical means · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title