Low-power inverter-based differential amplifier
US-8928406-B2 · Jan 6, 2015 · US
US10044325B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10044325-B2 |
| Application number | US-201615380021-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 15, 2016 |
| Priority date | Dec 16, 2015 |
| Publication date | Aug 7, 2018 |
| Grant date | Aug 7, 2018 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
An amplifier circuit, a voltage sensing apparatus, and an amplification method are disclosed. The amplifier circuit comprises (1) an input stage comprising a first set of transistors to which an input signal to be amplified is applied, the transistors of the first set comprising a semiconductor body, and (2) a processing stage comprising a second set of transistors for processing the signal from the input stage and generating an output signal. The transistors of the first set have a thicker gate oxide than the transistors of the second set, and are therefore suitable for higher voltage operation. The first and second sets of transistors are supplied by the same voltage supply of the amplifier circuit. The semiconductor body of the first set of transistors is connected to a reference potential to lower the threshold voltage.
Opening claim text (preview).
What is claimed is: 1. An amplifier circuit comprising: an input stage comprising a first set of transistors to which an input signal to be amplified is applied, the transistors of the first set comprising a semiconductor body; and a processing stage comprising a second set of transistors for processing the signal from the input stage and generating an output signal, wherein the transistors of the first set have a thicker gate oxide than the transistors of the second set, and wherein the transistors of the first set are therefore suitable for higher voltage operation, and wherein the first and second sets of transistors are supplied by a same voltage supply of the amplifier circuit, and wherein the semiconductor body of the first set of transistors is connected to a reference potential so as to lower a threshold voltage of the first set of transistors, wherein the reference potential is connected to a reference input of the input stage via a high-pass filter. 2. The amplifier circuit of claim 1 , wherein the input stage comprises a differential amplifier, and wherein the first set of transistors comprises: a first input transistor, wherein a first differential input is provided to a gate of the first input transistor; and a second input transistor, wherein a second differential input is provided to a gate of the second input transistor. 3. The amplifier circuit of claim 1 , wherein the voltage supply of the amplifier circuit is less than 2V. 4. The amplifier circuit of claim 1 , wherein the reference potential is in a range from 0.3V to 1V. 5. The amplifier circuit of claim 1 , wherein the voltage supply of the amplifier circuit and the reference potential are different. 6. A voltage sensing apparatus for detecting a voltage of biological tissue, the voltage sensing apparatus comprising: an electrode configured to measure a voltage from a portion of tissue, wherein the electrode comprises an exposed, electrically conductive, surface area; and an amplifier circuit for receiving an electrode potential from the electrode as an input signal, the amplifier circuit comprising: an input stage comprising a first set of transistors to which an input signal to be amplified is applied, the transistors of the first set comprising a semiconductor body; and a processing stage comprising a second set of transistors for processing the signal from the input stage and generating an output signal, wherein the transistors of the first set have a thicker gate oxide than the transistors of the second set, and wherein the transistors of the first set are suitable for higher voltage operation than the transistors of the second set, and wherein the first and second sets of transistors are supplied by a same voltage supply of the amplifier circuit, and wherein the semiconductor body of the first set of transistors is connected to a reference potential so as to lower a threshold voltage of the first set of transistors. 7. The voltage sensing apparatus of claim 6 , wherein the amplifier circuit comprises an instrumentation amplifier with a high-pass filter connected in a feedback path. 8. The voltage sensing apparatus of claim 6 , wherein the input stage comprises a differential amplifier, and wherein the first set of transistors comprises: a first input transistor, wherein a first differential input is provided to a gate of the first input transistor; and a second input transistor, wherein a second differential input is provided to a gate of the second input transistor. 9. The voltage sensing apparatus of claim 6 , wherein the voltage supply of the amplifier circuit is less than 2V. 10. The voltage sensing apparatus of claim 6 , wherein the reference potential is in a range from 0.3V to 1V. 11. The voltage sensing apparatus of claim 6 , wherein the voltage supply of the amplifier circuit and the reference potential are different. 12. An amplification method, comprising: processing an input signal using an input stage comprising a first set of transistors, the transistors of the first set comprising a semiconductor body; processing the input signal from the input stage using a processing stage; and generating an output signal using the processing stage, wherein the processing stage comprises a second set of transistors, and wherein the transistors of the first set have a thicker gate oxide than the transistors of the second set, and wherein the transistors of the first set are suitable for higher voltage operation than the transistors of the second set; supplying the first and second sets of transistors with a voltage supply; and connecting the semiconductor body of the first set of transistors to a reference potential to lower a threshold voltage of the first set of transistors, wherein the reference potential is connected to a reference input of the input stage via a high pass filter. 13. The method of claim 12 , wherein the input signal is a differential input signal, and wherein processing the input signal using the input stage further comprises providing a first differential input to a gate of a first input transistor of the input stage, and providing a second differential input to a gate of a second input transistor of the input stage. 14. The method of claim 12 , further comprising supplying the first and second sets of transistors with a voltage supply of less than 2V. 15. The method of claim 12 , wherein the reference potential is in a range from 0.3V to 1V. 16. The method of claim 12 , wherein the voltage supply of the first and second sets of transistors and the reference potential are different. 17. The amplifier circuit of claim 1 , wherein the high-pass filter has a corner frequency of less than 10 Hz. 18. The method of claim 12 , wherein the high-pass filter has a corner frequency of less than 10 Hz.
the AAC comprising control means on a back gate of the AAC · CPC title
using IC blocks as the active amplifying circuit · CPC title
Non-folded cascode stages · CPC title
Amplifier which being suitable for instrumentation applications · CPC title
Long tailed pairs (H03F3/4521, H03F3/45237 take precedence) · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.