Edge-emitting etched-facet lasers

Patent metadata

Field	Value
Publication number	US-10044168-B2
Application number	US-201715829133-A
Country	US
Kind code	B2
Filing date	Dec 1, 2017
Priority date	Dec 8, 2011
Publication date	Aug 7, 2018
Grant date	Aug 7, 2018

Abstract

A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.

First claim

The invention claimed is:

1. A method of fabricating a semiconductor laser structure comprising:
depositing an epitaxial structure on a substrate, the epitaxial structure including an active region for generating light;
forming a waveguide in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser;
forming a first recessed region in the epitaxial structure adjacent to the waveguide, the first recessed region including a first end wall and having an opening adjacent to the back etched facet, the first end wall spaced apart from a first adjacent laser chip to minimize back-reflection to and facilitate testing of the first adjacent laser chip prior to singulation of the first adjacent laser chip from the substrate by reflecting a laser beam emanating from the first adjacent laser chip; and
forming a second recessed region in the epitaxial structure adjacent to the waveguide, the second recessed region including a second end wall and having an opening adjacent to the front etched facet, the second end wall spaced apart from a second adjacent laser chip to minimize back-reflection to and facilitate testing of the second adjacent laser chip prior to singulation of the second adjacent laser chip from the substrate by reflecting a laser beam emanating from the second adjacent laser chip;
wherein the first and second recessed regions and the front and back etched facets are all formed in a common contiguous portion of the epitaxial structure defining the edge-emitting laser, wherein the common contiguous portion of the epitaxial structure is spaced apart from and does not include the first and second adjacent laser chips.

2. The method of claim 1 , further comprising forming the first end wall at an angle other than normal to the first direction.

3. The method of claim 1 , further comprising coating the back etched facet with a highly reflective material.

4. The method of claim 1 , further comprising forming the second end wall at angle other than normal to the first direction.

5. The method of claim 1 , wherein the opening to the first recessed region and the opening to the second recessed region are aligned to each other.

6. The method of claim 1 , wherein the edge-emitting laser is a ridge laser.

7. The method of claim 6 , wherein the ridge laser is of a Fabry-Perot (FP) type.

8. The method of claim 6 , wherein the ridge laser is of a distributed feedback (DFB) type.

9. The method of claim 1 , wherein the edge-emitting laser is a Buried Heterostructure (BH) laser.

10. The method of claim 9 , wherein the BH laser is of a Fabry-Perot (FP) type.

11. The method of claim 9 , wherein the BH laser is of a distributed feedback (DFB) type.

12. The method of claim 1 , wherein the substrate is InP.

13. The method of claim 1 , wherein the substrate is GaAs.

14. The method of claim 1 , wherein the substrate is GaN.

15. The method of claim 1 , further comprising forming an electrical contact on the common contiguous portion of the epitaxial structure adjacent to the waveguide and the first and second recessed regions.

16. A method of fabricating a semiconductor laser structure comprising:
depositing an epitaxial structure on a substrate, the epitaxial structure including an active region for generating light;
forming a first waveguide in a first portion of the epitaxial structure extending in a first direction, the first waveguide having a first front etched facet and a first back etched facet that define a first edge-emitting laser;
forming a second waveguide in a second portion of the epitaxial structure extending in the first direction, the second waveguide having a second front etched facet and a second back etched facet that define a second edge-emitting laser; and
forming a recessed region in the first portion of the epitaxial structure adjacent to the first waveguide, the recessed region including an end wall and having an opening directly opposing the second front etched facet of the second waveguide, the end wall spaced apart from the second front etched facet of the second waveguide to minimize back-reflection to and facilitate testing of the second waveguide prior to singulation of the second portion of the epitaxial structure from the substrate by reflecting a laser beam emanating from the second waveguide of the second edge-emitting laser;
wherein the first portion of the epitaxial structure is a common contiguous portion of the epitaxial structure comprising the recessed region and the first front and back etched facets defining the first edge-emitting laser, wherein the first portion of the epitaxial structure is spaced apart from and does not include the second portion of the epitaxial structure.

17. The method of claim 16 , wherein light from the second front etched facet of the second waveguide impinges on the end wall.

18. The method of claim 17 , further comprising forming the end wall at an angle other than normal to the first direction.

19. The method of claim 16 , further comprising coating at least one of the first back etched facet and the second back etched facet with a highly reflective material.

20. The method of claim 16 , wherein the edge-emitting laser is a ridge laser.

21. The method of claim 16 , further comprising forming an electrical contact on the first portion of the epitaxial structure adjacent to the waveguide and the recessed region.

22. A method of fabricating a semiconductor laser chip comprising:
depositing an epitaxial structure on a substrate, the epitaxial structure including an active region, the active region generating light;
forming a waveguide in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser;
forming a first recessed region in said epitaxial structure, the first recessed region including a first end wall and two side walls and being arranged at a first distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip; and
forming a second recessed region in said epitaxial structure, the second recessed region including a second end wall and two side walls and being arranged at a second distance from the waveguide and having an opening adjacent to the front etched facet;
wherein the opening to the first recessed region and the opening to the second recessed region are aligned to each other.

23. The method of claim 22 , further comprising forming the first end wall at an angle other than normal to the first direction.

24. The method of claim 23 , further comprising coating the back etched facet with a highly reflective material.

25. The method of claim 22 , further comprising forming the second end wall at angle other than normal to the first direction.

26. The method of claim 22 , wherein the edge-emitting laser is a ridge laser.

27. The method of claim 26 , wherein the ridge laser is of a Fabry-Perot (FP) type.

28. The method of claim 26 , wherein the ridge laser is of a distributed feedback (DFB) type.

29. The method of claim 22 , wherein the edge-emitting laser is a Buried Heterostructure (BH) laser.

30. The method of claim 29 , wherein

Assignees

• Macom Tech Solutions Holdings Inc

Inventors

• Behfar Alex A
• Green Malcolm R
• Stagarescu Cristian

Classifications

• H01S5/0201

  Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth · CPC title

• H01S5/1014

  Tapered waveguide, e.g. spotsize converter (H01S5/1064 takes precedence) · CPC title

• H01S5/34306

  emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers · CPC title

• H01S5/223

  Buried stripe structure {(H01S5/227 takes precedence)} · CPC title

• G01R31/26

  Testing of individual semiconductor devices (testing of photovoltaic devices H02S50/10; testing or measuring during manufacture or treatment {H10P74/00}) · CPC title