Method of preparing graphene-based thin-film laminate and graphene-based thin-film laminate prepared using the same

Patent metadata

Field	Value
Publication number	US-10043869-B2
Application number	US-201615048182-A
Country	US
Kind code	B2
Filing date	Feb 19, 2016
Priority date	Feb 2, 2016
Publication date	Aug 7, 2018
Grant date	Aug 7, 2018

Abstract

Provided are a method of preparing a graphene-based thin-film laminate and the graphene-based thin-film laminate prepared by using the method. The method may include repeating following operations 60 times or less, the cycle including: (a) to (d) processes described above, a graphene-based thin-film laminate prepared using the same, and an electrode and electronic device including the graphene-based thin-film laminate.

First claim

What is claimed is:

1. A method of preparing a graphene-based thin-film laminate, the method comprising conducting a cycle N times, the cycle comprising:
(a) contacting a surface of graphene transferred onto a substrate at room temperature with a non-metal precursor gas and activating the surface of graphene with plasma at the same time;
(b) performing a first purging on the non-metal precursor contacted and plasma-activated surface of the graphene using an inert gas;
(c) contacting the first-purged surface of the graphene with a metal precursor gas, the metal precursor gas being an aluminum precursor gas or a zinc precursor gas; and
(d) performing a second purging on the metal precursor gas contacted surface of the graphene using an inert gas,
wherein the N times consist of at least one cycle using the aluminum precursor gas in step (c) and at least one cycle using the zinc precursor gas in step (c), and the N times are 60 times or less, and
wherein a ratio of a number of cycles using the aluminum precursor gas in step (c) to a number of cycles using the zinc precursor gas in step (c) is 1:13 to 1:49.

2. The method of claim 1 , wherein the N times are 14 to 60 times.

3. The method of claim 1 , wherein the aluminum precursor gas comprises an aluminum halide, an organoaluminum compound, or a combination thereof.

4. The method of claim 1 , wherein the zinc precursor gas is an organozinc compound.

5. The method of claim 4 , wherein the organozinc compound comprises diethyl zinc.

6. The method of claim 1 , wherein in steps (a) and (c), a temperature of the surface of graphene is from about 80° C. to about 100° C. when contacting with the non-metal precursor gas or the metal precursor gas, respectively.

7. The method of claim 1 , wherein the substrate is maintained at a temperature of 100° C. or less throughout the cycle.

8. The method of claim 1 , wherein the ratio of the number of cycles using the aluminum precursor gas in step (c) to the number of cycles using the zinc precursor gas in step (c) is 1:13 to 1:19.

Assignees

• Hanwha Techwin Co Ltd

Inventors

• Park Chonghan
• Cho Seungmin
• Seo Sunae
• Shin Somyeong
• Kim Taekwang
• Kim Seonyeong

Classifications

• H10P14/3452

  Microstructure · CPC title

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title

• H10P14/3241

  being conductive materials · CPC title

• H10P14/3238

  being insulating materials · CPC title

• H01L21/02488

  Electricity · mapped topic