Nanotube structure based metal damascene process

Patent metadata

Field	Value
Publication number	US-10043750-B2
Application number	US-201514738967-A
Country	US
Kind code	B2
Filing date	Jun 15, 2015
Priority date	Jan 30, 2014
Publication date	Aug 7, 2018
Grant date	Aug 7, 2018

Abstract

In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include forming a plurality of groups of nanotubes over a substrate, wherein the groups of nanotubes may be arranged such that a portion of the substrate is exposed and forming metal over the exposed portion of the substrate between the plurality of groups of nanotubes.

First claim

The invention claimed is:

1. A method for manufacturing a metallization layer on a substrate, the method comprising:
depositing a catalyst material on the substrate, the catalyst material comprising a first layer of material arranged over the substrate and a second layer of material arranged over the first layer of material;
forming a plurality of groups of nanotubes over the substrate so that one or more trenches are formed between the groups of nanotubes, wherein each of the one or more trenches exposes a respective portion of the substrate between the groups of nanotubes, wherein the deposited catalyst material facilitates formation of the plurality of groups of nanotubes, and wherein each of the plurality of groups of nanotubes comprises a plurality of nanotubes and insulating material between the nanotubes;
forming metal in the one or more trenches between the groups of nanotubes over the one or more exposed portions of the substrate, wherein the metal completely fills the one or more trenches,
wherein the first layer of material comprises one of aluminium, tantalum, chromium and tungsten, and wherein the second layer of material comprises one of iron, cobalt and nickel.

2. The method of claim 1 ,
wherein forming the plurality of groups of nanotubes over the substrate comprises:
providing a uniform arrangement of nanotubes;
depositing an insulating material therebetween;
removing a multitude of nanotubes together with the insulating material deposited therebetween.

3. The method of claim 1 , further comprising:
growing a uniform arrangement of nanotubes on a surface of the catalyst material.

4. The method of claim 2 , further comprising:
removing the catalyst material from underneath the multitude of nanotubes which have been removed together with the insulating material deposited therebetween.

5. The method of claim 1 ,
wherein the plurality of groups of nanotubes comprise carbon nanotubes.

6. The method of claim 2 ,
wherein removing the multitude of nanotubes together with the insulating material deposited therebetween comprises a plasma etch process.

7. The method of claim 1 ,
wherein the nanotubes in the plurality of groups of nanotubes arranged over the substrate are substantially extending at a right angle with respect to the substrate.

8. The method of claim 1 , further comprising:
after forming the metal over the at least one exposed portion of the substrate, removing each of the plurality of groups of nanotubes.

9. The method of claim 8 , further comprising:
after removing the each of the plurality of groups of nanotubes, removing the catalyst material so as to expose one or more portions of the substrate.

10. A method for manufacturing a metallization layer on a substrate, the method comprising:
depositing a catalyst material on the substrate, the catalyst material comprising a first layer of material arranged over the substrate and a second layer of material arranged over the first layer of material;
forming a plurality of groups of nanotubes over the substrate so that at least one portion of the substrate between the groups of nanotubes is exposed, wherein the deposited catalyst material facilitates formation of the plurality of groups of nanotubes, wherein each of the plurality of groups of nanotubes comprises a plurality of nanotubes with insulating material disposed between adjacent nanotubes of the plurality of nanotubes;
forming metal over the at least one exposed portion of the substrate; and
after forming the metal, removing each of the plurality of groups of nanotubes, wherein removing each of the plurality of groups of nanotubes comprises removing the plurality of nanotubes and the insulating material of each group of nanotubes.

11. The method of claim 10 , further comprising:
after removing each of the plurality of groups of nanotubes, removing the catalyst material.

12. The method of claim 10 , wherein the plurality of groups of nanotubes are formed so that at least one or more trenches are formed between the groups of nanotubes, wherein each of the one or more trenches exposes a respective portion of the substrate between the groups of nanotubes, and
wherein the metal completely fills the one or more trenches.

Assignees

• Infineon Technologies Ag

Inventors

• Joshi Ravi
• Steinbrenner Juergen

Classifications

• H10P14/274

  using seed materials · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P14/6902

  composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon · CPC title

• H10P14/3464

  Nanotubes · CPC title

• H10P14/3406 Primary

  Carbon, e.g. diamond-like carbon · CPC title