Topcoat compositions and photolithographic methods
US-2016130462-A1 · May 12, 2016 · US
US10042259B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10042259-B2 |
| Application number | US-201715730876-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 12, 2017 |
| Priority date | Oct 31, 2016 |
| Publication date | Aug 7, 2018 |
| Grant date | Aug 7, 2018 |
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Topcoat compositions comprise: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I): wherein: R 1 represents H, F, methyl or fluorinated methyl; R 2 represents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; R 3 represents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; R 4 represents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S or NR 5 , wherein R 5 is chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.
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What is claimed is: 1. A topcoat composition, comprising: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I): wherein: R 1 represents H, F, methyl, or fluorinated methyl; R 2 represents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; R 3 represents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; R 4 represents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S, or NR 5 , wherein R 5 is chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. 2. The topcoat composition of claim 1 , wherein a is 0. 3. The topcoat composition of claim 1 , wherein a is 1. 4. The topcoat composition of claim 1 , wherein R 4 represents C1 to C8 fluoroalkyl. 5. The topcoat composition of claim 1 , wherein the surface active polymer further comprises a polymerized unit formed from a monomer comprising a base labile group, an acid labile group, or a combination thereof. 6. The topcoat composition of claim 1 , wherein the topcoat composition is free of photoacid generators. 7. The topcoat composition of claim 1 , further comprising a photoacid generator. 8. The topcoat composition of claim 1 , wherein the surface active polymer is present in an amount of from 1 to 30 wt % based on total solids of the topcoat composition. 9. A coated substrate, comprising: a photoresist layer on a substrate; and a topcoat layer formed from a topcoat composition of claim 1 over the photoresist layer. 10. A pattern-forming method, comprising: (a) forming a photoresist layer over a substrate; (b) forming a topcoat layer over the photoresist layer, wherein the topcoat layer is formed from a topcoat composition of any of claim 1 ; (c) exposing the topcoat layer and the photoresist layer to activating radiation; and (d) contacting the exposed topcoat layer and photoresist layer with a developer to form a photoresist pattern. 11. The method of claim 10 , wherein the exposing is conducted by immersion lithography. 12. The method of claim 10 , wherein a is 0. 13. The method of claim 10 , wherein a is 1. 14. The method of claim 10 , wherein R 4 represents C1 to C8 fluoroalkyl. 15. The method of claim 10 , wherein the surface active polymer further comprises a polymerized unit formed from a monomer comprising a base labile group, an acid labile group, or a combination thereof. 16. The method of claim 10 , wherein the topcoat composition is free of photoacid generators. 17. The method of claim 10 , further comprising a photoacid generator. 18. The method of claim 10 , wherein the surface active polymer is present in an amount of from 1 to 30 wt % based on total solids of the topcoat composition.
Photolithographic processes · CPC title
Amides {, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide} · CPC title
of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen · CPC title
containing oxygen in addition to the carbonamido oxygen {, e.g. N-methylolacrylamide, N-acryloyl morpholine} · CPC title
Homopolymers or copolymers of amides or imides · CPC title
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