Topcoat compositions and pattern-forming methods

US10042259B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10042259-B2
Application numberUS-201715730876-A
CountryUS
Kind codeB2
Filing dateOct 12, 2017
Priority dateOct 31, 2016
Publication dateAug 7, 2018
Grant dateAug 7, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Topcoat compositions comprise: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I): wherein: R 1 represents H, F, methyl or fluorinated methyl; R 2 represents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; R 3 represents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; R 4 represents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S or NR 5 , wherein R 5 is chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

First claim

Opening claim text (preview).

What is claimed is: 1. A topcoat composition, comprising: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I):  wherein: R 1 represents H, F, methyl, or fluorinated methyl; R 2 represents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; R 3 represents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; R 4 represents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S, or NR 5 , wherein R 5 is chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. 2. The topcoat composition of claim 1 , wherein a is 0. 3. The topcoat composition of claim 1 , wherein a is 1. 4. The topcoat composition of claim 1 , wherein R 4 represents C1 to C8 fluoroalkyl. 5. The topcoat composition of claim 1 , wherein the surface active polymer further comprises a polymerized unit formed from a monomer comprising a base labile group, an acid labile group, or a combination thereof. 6. The topcoat composition of claim 1 , wherein the topcoat composition is free of photoacid generators. 7. The topcoat composition of claim 1 , further comprising a photoacid generator. 8. The topcoat composition of claim 1 , wherein the surface active polymer is present in an amount of from 1 to 30 wt % based on total solids of the topcoat composition. 9. A coated substrate, comprising: a photoresist layer on a substrate; and a topcoat layer formed from a topcoat composition of claim 1 over the photoresist layer. 10. A pattern-forming method, comprising: (a) forming a photoresist layer over a substrate; (b) forming a topcoat layer over the photoresist layer, wherein the topcoat layer is formed from a topcoat composition of any of claim 1 ; (c) exposing the topcoat layer and the photoresist layer to activating radiation; and (d) contacting the exposed topcoat layer and photoresist layer with a developer to form a photoresist pattern. 11. The method of claim 10 , wherein the exposing is conducted by immersion lithography. 12. The method of claim 10 , wherein a is 0. 13. The method of claim 10 , wherein a is 1. 14. The method of claim 10 , wherein R 4 represents C1 to C8 fluoroalkyl. 15. The method of claim 10 , wherein the surface active polymer further comprises a polymerized unit formed from a monomer comprising a base labile group, an acid labile group, or a combination thereof. 16. The method of claim 10 , wherein the topcoat composition is free of photoacid generators. 17. The method of claim 10 , further comprising a photoacid generator. 18. The method of claim 10 , wherein the surface active polymer is present in an amount of from 1 to 30 wt % based on total solids of the topcoat composition.

Assignees

Inventors

Classifications

  • Photolithographic processes · CPC title

  • Amides {, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide} · CPC title

  • of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen · CPC title

  • containing oxygen in addition to the carbonamido oxygen {, e.g. N-methylolacrylamide, N-acryloyl morpholine} · CPC title

  • Homopolymers or copolymers of amides or imides · CPC title

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What does patent US10042259B2 cover?
Topcoat compositions comprise: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I): wherein: R 1 represents H, F, methyl or fluorinated methyl; R 2 represents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more het…
Who is the assignee on this patent?
Rohm & Haas Elect Mat
What technology area does this patent fall under?
Primary CPC classification C09D201/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Aug 07 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).