Electro-absorption modulator with local temperature control

Patent metadata

Field	Value
Publication number	US-10042192-B2
Application number	US-201615362554-A
Country	US
Kind code	B2
Filing date	Nov 28, 2016
Priority date	Nov 28, 2016
Publication date	Aug 7, 2018
Grant date	Aug 7, 2018

Abstract

Methods, apparatus, and systems are provided including an electro-absorption modulator (EAM) with local temperature control for optical communication. One aspect provides an optical EAM including a semiconductor portion configured to modulate light for transmission or reception of an optical signal. The modulator includes a temperature sensing element configured to sense temperature and to provide an output signal based on the sensed temperature, and a temperature control element configured to control temperature of the semiconductor portion based on the output signal from the temperature sensing element. In one example, the semiconductor portion includes germanium silicon (GeSi).

First claim

What is claimed is:

1. An optical electro-absorption modulator, comprising:
a semiconductor portion configured to modulate light for transmission or reception of an optical signal;
a temperature sensing element configured to sense temperature and to provide an output signal based on the sensed temperature; and
a temperature control element configured to control temperature of the semiconductor portion based on the output signal from the temperature sensing element, the temperature control element including a heating element and a current control circuit that modulates current to the heating element based on the output signal.

2. The modulator of claim 1 , wherein the semiconductor portion includes germanium silicon (GeSi).

3. The modulator of claim 1 , wherein the temperature sensing element is configured to sense environmental temperature.

4. The modulator of claim 1 , wherein the temperature sensing element is configured to sense temperature of the semiconductor portion.

5. The modulator of claim 1 , wherein the temperature control element includes Tungsten (W).

6. The modulator of claim 1 , wherein the temperature control element includes titanium nitride (TiN).

7. The modulator of claim 1 , wherein the temperature control element includes doped silicon (Si).

8. The modulator of claim 1 , wherein the temperature control element is configured to function as a resistor to increase temperature of the semiconductor portion using current injection.

9. An optical integrated circuit, comprising:
an optical electro-absorption modulator including a germanium silicon (GeSi) portion configured to modulate light for transmission or reception of an optical signal;
a temperature sensing element within the modulator configured to sense environmental temperature of the modulator and to provide an output signal based on the sensed temperature; and
a temperature control element within the modulator configured to control temperature of the GeSi portion based on the output signal from the temperature sensing element, the temperature control element including a heating element and a current control circuit that modulates current to the heating element based on the output signal.

10. The integrated circuit of claim 9 , wherein the temperature sensing element includes doped silicon (Si).

11. The integrated circuit of claim 9 , wherein the temperature sensing element includes a metal.

12. The integrated circuit of claim 9 , wherein the temperature sensing element includes resistance-based temperature sensing.

13. An optical communication system, comprising:
an optical input;
an optical output; and
an optical electro-absorption modulator (EAM) configured to connect the optical input to the optical output, the optical EAM including:
a germanium silicon (GeSi) portion configured to modulate light for transmission or reception of an optical signal;
a temperature sensing element configured to sense temperature of the GeSi portion and to provide an output signal based on the sensed temperature; and
a temperature control element configured to control temperature of the GeSi portion based on the output signal from the temperature sensing element, the temperature control element including a heating element and a current control circuit that modulates current to the heating element based on the output signal.

14. The system of claim 13 , wherein the optical input includes a chip-to-chip level communication.

15. The system of claim 13 , wherein the optical input includes a board-to-board level communication.

16. The system of claim 13 , wherein the optical EAM is configured to be incorporated into an optical transceiver.

17. The system of claim 13 , wherein the temperature sensing element is further configured to sense environmental temperature.

18. A method, comprising:
providing an optical electro-absorption modulator (EAM) including a semiconductor portion configured to modulate light for transmission or reception of an optical signal;
sensing a temperature using a temperature sensing element within the modulator and producing an output signal based on the sensed temperature; and
controlling temperature of the semiconductor portion using a temperature control element within the modulator based on the output signal from the temperature sensing element, the temperature control element including a heating element and a current control circuit that modulates current to the heating element based on the output signal.

19. The method of claim 18 , wherein the semiconductor portion includes germanium silicon (GeSi).

20. The method of claim 18 , wherein the temperature sensing element is configured to sense environmental temperature.

21. The method of claim 18 , wherein the temperature sensing element is configured to sense temperature of the semiconductor portion.

Assignees

• Futurewei Technologies Inc

Inventors

• Cai Yan
• Bai Yusheng
• Lei Hongbing
• Shen Xiao Andy

Classifications

• G08C23/04

  using light waves, e.g. infrared · CPC title

• H04B10/505

  using external modulation · CPC title

• G02F2203/60

  Temperature independent · CPC title

• G02F1/025 Primary

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02F2001/0155

  Physics · mapped topic