Porosity measurement of semiconductor structures

Patent metadata

Field	Value
Publication number	US-10041873-B2
Application number	US-201715582331-A
Country	US
Kind code	B2
Filing date	Apr 28, 2017
Priority date	May 2, 2016
Publication date	Aug 7, 2018
Grant date	Aug 7, 2018

Abstract

Methods and systems for performing optical measurements of the porosity of geometric structures filled with a fill material by a capillary condensation process are presented herein. Measurements are performed while the structure under measurement is treated with a flow of purge gas that includes a controlled amount of vaporized fill material. A portion of the fill material condenses and fills openings in the structural features such as pores of a planar film, spaces between structural features, small volumes such as notches, trenches, slits, contact holes, etc. In one aspect, the desired degree of saturation of vaporized material in the gaseous flow is determined based on the maximum feature size to be filled. In another aspect, measurement data is collected when a structure is unfilled and when the structure is filled. The collected data is combined in a multi-target model based measurement to estimate values of porosity and critical dimensions.

First claim

What is claimed is:

1. A measurement system comprising:
an illumination source configured to provide a first amount of illumination light to one or more metrology targets disposed on a specimen;
a vapor injection system configured to provide a first gaseous flow including a first fill material in a vapor phase to the one or more metrology targets during the illumination of the one or more metrology targets, wherein a portion of the fill material is condensed onto the one or more metrology targets in a liquid phase, and wherein the portion of fill material fills at least a portion of a space between one or more geometric, structural features of the one or more metrology targets;
a detector configured to receive a first amount of collected light from the one or more metrology targets in response to the first amount of illumination light and generate a first set of measurement signals indicative of the first amount of collected light; and
a computing system configured to:
estimate a value indicative of a porosity of the one or more metrology targets based at least in part on the first set of measurement signals and a measurement model.

2. The measurement system of claim 1 , wherein the computing system is further configured to:
estimate a value of a critical dimension of the one or more metrology targets based at least in part on the first set of measurement signals and the measurement model.

3. The measurement system of claim 1 , wherein the illumination source is further configured to provide a second amount of illumination light to the one or more metrology targets disposed on the specimen, wherein the vapor injection system is further configured to provide a second gaseous flow to the one or more metrology targets during the illumination of the one or more metrology targets with the second amount of illumination light, wherein the detector is further configured to receive a second amount of collected light from the one or more metrology targets in response to the second amount of illumination light and generate a second set of measurement signals indicative of the second amount of collected light, and wherein the computing system is further configured to:
estimate a value indicative of the porosity of the one or more metrology targets and a value of a critical dimension of the one or more metrology targets based at least in part on the first and second sets of measurement signals and a multi-target measurement model.

4. The measurement system of claim 3 , wherein the first gaseous flow includes the first fill material at a first partial pressure and the second gaseous flow includes the first fill material at a second partial pressure.

5. The measurement system of claim 4 , wherein the second partial pressure of the first fill material is approximately zero.

6. The measurement system of claim 3 , wherein the first gaseous flow includes the first fill material and the second gaseous flow includes a second fill material.

7. The measurement system of claim 1 , wherein the specimen temperature is approximately the same temperature as a temperature of the first fill material vaporized in the first gaseous flow.

8. The measurement system of claim 1 , wherein the vapor injection system mixes a first flow of unsaturated purge gas with a second flow of purge gas saturated with the first fill material in a vapor phase to provide the first gaseous flow.

9. The measurement system of claim 1 , wherein the vapor injection system adjusts a partial pressure of the fill material in the first gaseous flow by changing a ratio of the flow of unsaturated purge gas and the flow of purge gas saturated with the first fill material in a vapor phase.

10. The measurement system of claim 1 , wherein the vapor injection system comprises:
a bubbler including the first fill material in a liquid phase, wherein a portion of the liquid fill material vaporizes into the second flow of purge gas to saturate the second flow of purge gas with the first fill material in a vapor phase.

11. The measurement system of claim 1 , wherein the fill material is any of water, ethanol, toluene, isopropyl alcohol, methanol, and benzene.

12. The measurement system of claim 1 , wherein the first fill material exhibits fluorescence in response to the first amount of illumination light.

13. The measurement system of claim 2 , wherein the estimating of the value of the porosity and the critical dimension involves any of a model-based regression, a model-based library search, a model-based library regression, an image-based analysis, and a signal response metrology model.

14. The measurement system of claim 1 , wherein the measurement system is configured as any of a spectroscopic ellipsometer, a spectroscopic reflectometer, an angle resolved reflectometer, a dark field inspection system, a bright field inspection system, and an imaging overlay measurement system.

15. A measurement system comprising:
an illumination source configured to provide an amount of illumination light to one or more structural elements disposed on a specimen;
a vapor injection system comprising:
a first mass flow controller that regulates a flowrate of a first flow of a purge gas;
a second mass flow controller that regulates a flowrate of a second flow of the purge gas; and
a bubbler including a first fill material in a liquid phase, wherein the second flow of the purge gas passes through the bubbler and a portion of the liquid fill material vaporizes into the second flow of the purge gas to saturate the second flow of the purge gas with the first fill material in a vapor phase, wherein the first flow of the purge gas and the second flow of the purge gas saturated with the first fill material are combined to form a gaseous flow provided to the one or more structural elements disposed on the specimen during the illumination of the one or more structural elements;

a detector that receives a first amount of collected light from the one or more structural elements in response to the first amount of illumination light and generates a first set of measurement signals indicative of the first amount of collected light; and
a computing system configured to:
estimate a value indicative of a porosity of the one or more metrology targets based at least in part on the first set of measurement signals.

16. The measurement system of claim 15 , wherein the computing system is further configured to:
communicate a first command signal to the first mass flow controller that causes the first mass flow controller to adjust the flowrate of the first flow of the purge gas; and
communicate a second command signal to the second mass flow controller that causes the second mass flow controller to adjust the flowrate of the second flow of the purge gas such that a ratio of the flowrate of the first flow of the purge gas and the flowrate of the second flow of the purge gas achieves a desired partial pressure of the first fill material in the gaseous flow.

17. The measurement system of claim 15 , wherein the one or more structural elements includes a porous planar film.

18. A method comprising:
providing a first amount of illumination light to one or more structural elements disposed on a specimen;
providing a first gaseous flow including a first fill material in a vapor phase to the one or more structural elements during the illumination of the one or more structural elements, wherein a portion of the fill material is condensed onto the one or more structural elements in a liquid phase, wherein the portion of fill material fills at least a portion of

Assignees

• Kla Tencor Corp

Inventors

• Krishnan Shankar

Classifications

• G01B11/12

  internal diameters · CPC title

• G01N21/00

  Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light (G01N3/00 - G01N19/00 take precedence) · CPC title

• G01B2210/56

  Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth · CPC title

• G03F7/00

  Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor (using photoresist structures for special production processes, see the relevant places, e.g. B44C, H10P76/00, H05K) · CPC title

• G01N21/91

  using penetration of dyes, e.g. fluorescent ink · CPC title