Polycrystalline diamond compacts and methods of manufacture

Patent metadata

Field	Value
Publication number	US-10041304-B2
Application number	US-201514905099-A
Country	US
Kind code	B2
Filing date	Mar 10, 2015
Priority date	Mar 10, 2015
Publication date	Aug 7, 2018
Grant date	Aug 7, 2018

Abstract

An example polycrystalline diamond compact includes a substrate and a diamond table attached to the substrate. A multilayer joint interposes the substrate and the diamond table and comprises at least two component parts selected from the group consisting of a base layer, one or more intermediate layers, and a braze layer. The at least two component parts are formed via a thin film deposition process.

First claim

What is claimed is:

1. A polycrystalline diamond compact, comprising:
a substrate;
a diamond table attached to the substrate; and
a multilayer joint interposing the substrate and the diamond table, the multilayer joint comprising at least two component parts selected from the group consisting of a base layer, one or more intermediate layers, and a braze layer,
wherein the at least two component parts are formed via a thin film deposition process;
wherein at least one of the at least two component parts is doped with a material to alter a coefficient of thermal expansion, the material being selected from the group consisting of a ceramic, a metal, a polymer, and any combination thereof.

2. The polycrystalline diamond compact of claim 1 , wherein the diamond table is made of an ultra-hard material selected from the group consisting of polycrystalline diamond, polycrystalline cubic boron nitride, impregnated diamond, thermally stable polycrystalline diamond, and any combination thereof.

3. The polycrystalline diamond compact of claim 1 , wherein the diamond table is formed by a high-temperature, high-pressure (HTHP) press cycle.

4. The polycrystalline diamond compact of claim 3 , wherein the diamond table is leached to become thermally stable following the HTHP press cycle.

5. The polycrystalline diamond compact of claim 3 , wherein the diamond table is attached to the substrate by at least one of a brazing process, hot pressing, and a lower high-temperature, high-pressure (HTHP) press cycle.

6. The polycrystalline diamond compact of claim 1 , wherein the thin film deposition process is selected from the group consisting of physical vapor deposition, chemical vapor deposition, sputtering, pulsed laser deposition, chemical solution deposition, plasma enhanced chemical vapor deposition, cathodic arc deposition, electrohydrodynamic deposition, ion-assisted e-beam deposition, plating, thermal evaporation, and spin coating.

7. The polycrystalline diamond compact of claim 1 , wherein the at least two component parts comprise a material selected from the group consisting of titanium, tungsten, chromium, zirconium, manganese, silver, copper, gold, vanadium, yttrium, niobium, molybdenum, hafnium, tantalum, nickel, palladium, boron, silicon, iron, aluminum, cobalt, indium, phosphorus, and any alloy thereof.

8. The polycrystalline diamond compact of claim 1 , wherein the at least two component parts comprise materials that exhibit corresponding coefficients of thermal expansion that lie between that of the diamond table and the substrate.

9. The polycrystalline diamond compact of claim 1 , wherein the multilayer joint is a gradient multilayer joint where materials of the at least two component parts gradually transition from one or more first materials to one or more second materials.

10. The polycrystalline diamond compact of claim 1 , wherein the polycrystalline diamond compact comprises a cutter or a bearing element.

11. A method of fabricating a polycrystalline diamond compact, comprising:
depositing a multilayer joint on a carrier during a thin film deposition process, the carrier being one of a diamond table and a carrier substrate, and the multilayer joint including at least two component parts selected from the group consisting of a base layer, one or more intermediate layers, and a braze layer;
attaching the diamond table to a substrate via a brazing process with the multilayer joint interposing the diamond table and the substrate; and
doping a material of the at least two component parts with a dopant to alter a coefficient of thermal expansion of the material, the dopant being selected from the group consisting of a ceramic, a metal, a polymer, and any combination thereof.

12. The method of claim 11 , wherein depositing the multilayer joint on the carrier is preceded by:
forming the diamond table via a high-temperature, high-pressure (HTHP) press cycle; and
leaching a catalyst from the diamond table following the HTHP press cycle.

13. The method of claim 11 , wherein the carrier is the carrier substrate attaching the diamond table to the substrate comprises:
detaching the multilayer joint from the carrier substrate; and
positioning the multilayer joint between the diamond table and the substrate for the brazing process.

14. The method of claim 11 , wherein depositing the multilayer joint on the carrier comprises:
depositing one or more first materials on the carrier; and
gradually transitioning a deposition of the one or more first materials on the carrier to a deposition of one or more second materials on the carrier.

15. The method of claim 11 , wherein the carrier is the diamond table and depositing the multilayer joint on the carrier comprises depositing one or more materials at a temperature lower than a graphitization temperature of the diamond table.

Assignees

• Halliburton Energy Services Inc

Inventors

• Saini Gagan
• Atkins William Brian

Classifications

• B22F7/06 Primary

  of composite workpieces or articles from parts, e.g. to form tipped tools {(B22F7/002 takes precedence)} · CPC title

• E21B10/5735 Primary

  Interface between the substrate and the cutting element · CPC title

• B24D18/0009

  using moulds or presses · CPC title

• C22C26/00

  Alloys containing diamond {or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes} · CPC title

• C22C1/00

  Making non-ferrous alloys (by electrothermic methods C22B4/00; by electrolysis C25C1/24, C25C3/36) · CPC title