Nitride semiconductor device

Patent metadata

Field	Value
Publication number	US-10038064-B2
Application number	US-201615232517-A
Country	US
Kind code	B2
Filing date	Aug 9, 2016
Priority date	Aug 10, 2015
Publication date	Jul 31, 2018
Grant date	Jul 31, 2018

Abstract

A nitride semiconductor device includes: a nitride semiconductor layer; a gate electrode finger having at least one end portion, and extending along a surface of the nitride semiconductor layer; and a drain electrode finger having at least one end portion on the same side as that of the one end portion of the gate electrode finger, and extending along the gate electrode finger, wherein the one end portion of the drain electrode finger protrudes relative to the one end portion of the gate electrode finger.

First claim

What is claimed is:

1. A nitride semiconductor device, comprising:
a nitride semiconductor layer;
a first gate electrode finger including a first end portion and a second end portion, and extending along a surface of the nitride semiconductor layer;
a second gate electrode finger extending along the surface of the nitride semiconductor layer; and
a drain electrode, which is interposed between the first gate electrode finger and the second gate electrode finger, including a first end portion and a second end portion, and extending along the first gate electrode finger,
wherein the drain electrode is adjacent to the first gate electrode finger, and
wherein, in a length direction of the drain electrode, the first end portion of the drain electrode protrudes relative to the first end portion of the first gate electrode finger and the second end portion of the drain electrode protrudes relative to the second end portion of the first gate electrode finger.

2. The nitride semiconductor device of claim 1 , wherein the second gate electrode finger includes a first end portion and a second end portion, and
wherein, in the length direction of the drain electrode, the first end portion of the drain electrode protrudes relative to the first end portion of the second gate electrode finger and the second end portion of the drain electrode protrudes relative to the second end portion of the second gate electrode finger.

3. The nitride semiconductor device of claim 1 , wherein a protrusion amount L DE1 of the first end portion of the drain electrode is greater than a distance L GD between the first gate electrode finger and the drain electrode.

4. The nitride semiconductor device of claim 3 , wherein a ratio (L DE1 /L GD ) between the protrusion amount L DE1 and the distance L GD is greater than 1.

5. The nitride semiconductor device of claim 3 , wherein the protrusion amount L DE1 ranges from 3 μm to 45 μm, and the distance L GD ranges from 3 μm to 15 μm.

6. The nitride semiconductor device of claim 1 , wherein the first gate electrode finger comprises a field plate selectively extending to the drain electrode side.

7. The nitride semiconductor device of claim 1 , wherein the nitride semiconductor layer comprises:
a first nitride semiconductor layer containing Ga or Al; and
an electron supply layer in contact with the first nitride semiconductor layer from above, the electron supply layer being formed of a second nitride semiconductor having a composition different from that of the first nitride semiconductor layer in an interface between the first nitride semiconductor layer and the electron supply layer.

8. The nitride semiconductor device of claim 7 , wherein a deep acceptor concentration of the first nitride semiconductor layer ranges from 5×10 16 cm −3 to 1×10 18 cm −3 .

9. The nitride semiconductor device of claim 1 , wherein the drain electrode is adjacent to the second gate electrode finger.

10. The nitride semiconductor device of claim 1 , further comprising a first source electrode and a second source electrode,
wherein the first gate electrode finger and the second gate electrode finger surround the first source electrode and the second source electrode, respectively.

11. A nitride semiconductor device, comprising:
a nitride semiconductor layer;
a first anode electrode finger including a first end portion and a second end portion, and extending along a surface of the nitride semiconductor layer;
a second anode electrode finger extending along the surface of the nitride semiconductor layer; and
a cathode electrode, which is interposed between the first anode electrode finger and the second anode electrode finger, including a first end portion and a second end portion, and extending along the first anode electrode finger,
wherein the cathode electrode is adjacent to the first anode electrode finger, and
wherein, in a length direction of the cathode electrode, the first end portion of the cathode electrode protrudes relative to the first end portion of the first anode electrode finger and the second end portion of the cathode electrode protrudes relative to the second end portion of the first anode electrode finger.

12. The nitride semiconductor device of claim 11 , wherein the second anode electrode finger includes a first end portion and a second end portion, and
wherein, in the length direction of the cathode electrode, the first end portion of the cathode electrode protrudes relative to the first end portion of the second anode electrode finger and the second end portion of the cathode electrode protrudes relative to the second end portion of the second anode electrode finger.

Assignees

• Rohm Co Ltd

Inventors

• Tanaka Taketoshi

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H01L2924/00014

  Electricity · mapped topic

• H01L29/4232

  Electricity · mapped topic