Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same

Patent metadata

Field	Value
Publication number	US-10037956-B2
Application number	US-201514596851-A
Country	US
Kind code	B2
Filing date	Jan 14, 2015
Priority date	Sep 21, 2001
Publication date	Jul 31, 2018
Grant date	Jul 31, 2018

Abstract

The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.

First claim

What is claimed is:

1. A process of forming an integrated circuit device comprising:
forming a metal pad over a substrate;
forming a metal adhesion first layer above and on the metal pad, the metal first layer comprising TiW and having a thickness up to 4,000 Ångstrom (Å);
forming a metal second layer above and on the metal adhesion first layer;
forming a metal stud third layer above and on the metal second layer;
forming a solder bump above and on the metal third layer,
wherein the forming the metal second layer and the forming the metal third layer comprises sputtering a copper metal second layer over the metal adhesion first layer under conditions to impart a compressive stress therein; and
plating a copper stud through a mask that is disposed over the metal second layer.

2. The process of claim 1 , wherein the metal second layer comprises copper.

3. The process of claim 1 , further comprising forming an intermetallic layer between the metal stud and the solder bump, wherein the intermetallic layer includes tin.

4. The process of claim 1 , wherein forming the metal adhesion first layer includes forming a metal adhesion first layer including a metal chosen from a group consisting of Ti, W, and Cr.

5. The process of claim 1 , wherein forming the metal adhesion first layer includes forming a metal adhesion first layer to a thickness between about 500 Ångstrom (Å) and 4000 Ångstrom (Å).

6. The process of claim 1 , wherein forming the metal stud includes forming a metal stud to a thickness between 5 micrometer (μm) and 15 μm.

7. The process of claim 1 , wherein forming the metal stud includes forming a metal stud to a thickness of about 10 μm.

Assignees

• Intel Corp

Inventors

• Datta Madhav
• Emory Dave
• Joshi Subhash M
• Menezes Susanne
• Suh Doowon

Classifications

• H10W72/9415

  relative to the surface, e.g. recessed, protruding · CPC title

• H10W72/01953

  by etching · CPC title

• H10W72/01257

  by reflowing · CPC title

• H10W72/01255

  by using masks · CPC title

• H10W72/01204

  using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates · CPC title