Surface acoustic wave sensor

Patent metadata

Field	Value
Publication number	US-10037382-B2
Application number	US-201314438844-A
Country	US
Kind code	B2
Filing date	Jul 31, 2013
Priority date	Oct 29, 2012
Publication date	Jul 31, 2018
Grant date	Jul 31, 2018

Abstract

The present invention provides a surface acoustic wave sensor capable of suitably controlling the flow of a liquid sample onto IDT electrodes. A surface acoustic wave sensor 1 has a piezoelectric substrate, a first IDT electrode and a second IDT electrode which are located on the upper surface of the piezoelectric substrate and are separated from each other while sandwiching a detection part (detection region) on the piezoelectric substrate there between, and the cover which forms the space being on the first IDT electrode, second IDT electrode, and detection part and straddling them. On the lower surface of the cover, the detection part-facing surface (lower surface of the film) facing the detection part has a smaller contact angle to the liquid sample than that of a pair of electrode-facing surfaces (lower surface of the cover body) facing the first IDT electrode and second IDT electrode.

First claim

The invention claimed is:

1. A surface acoustic wave sensor, comprising:
a piezoelectric substrate;
a detection part on an upper surface of the piezoelectric substrate, the detection part being configured to detect a detection object which is contained in a sample;
a pair of IDT electrodes on the upper surface of the piezoelectric substrate, the pair of IDT electrodes sandwiching the detection part therebetween; and
a cover configured to cover the detection part and the pair of IDT electrodes through a space, wherein
a lower surface of the cover comprises
a first region facing the detection part, and
a pair of second regions at both sides relative to the first region in a direction of alignment of the detection part and the pair of IDT electrodes, and

the first region has a contact angle to the sample smaller than that of the pair of second regions,
wherein the contact angle of the first region to the sample is less than 90°.

2. The surface acoustic wave sensor according to claim 1 , wherein
the cover comprises
a base material having the first region and the pair of said second regions, and
a film laminated on the first region of the base material, and

a lower surface of the film has a contact angle to the sample smaller than that of the pair of second regions.

3. The surface acoustic wave sensor according to claim 1 , wherein
the cover comprises
a base material having the first region and the pair of said second regions, and
a coating layer on a surface of the first region of the base material, the coating layer comprising a surface having a contact angle to the sample smaller than that of a surface of the base material, and

the coating layer is not on surfaces of the pair of second regions.

4. The surface acoustic wave sensor according to claim 1 , wherein the pair of second regions face the pair of IDT electrodes, respectively.

5. The surface acoustic wave sensor according to claim 1 ,
further comprising a lower layer portion having an upper surface on which the piezoelectric substrate is located,
wherein
the cover comprises
a middle layer portion on the lower layer portion, the middle layer portion being located at a lateral portion of the piezoelectric substrate, and
an upper layer portion on the middle layer portion, the upper layer portion being above the piezoelectric substrate and covering the piezoelectric substrate.

6. The surface acoustic wave sensor according to claim 5 , wherein
the middle layer portion comprises
a first layer on the lower layer portion, and
a second layer on the first layer, and

in the direction of alignment of the detection part and the pair of IDT electrodes, the first layer is closer to the piezoelectric substrate than the second layer.

7. The surface acoustic wave sensor according to claim 6 , wherein,
the first layer comprises an exposed surface in an upper surface thereof, the exposed surface being exposed from the second layers, the exposed surface having a contact angle to the sample which is smaller than that of the pair of second regions and which is larger than that of the first region.

8. The surface acoustic wave sensor according to claim 1 , wherein the lower surface of the cover comprises a groove, the groove being constituted by the first region and the pair of second regions which project downward more than the first region.

9. The surface acoustic wave sensor according to claim 1 , further comprising:
a package holding the piezoelectric substrate and the cover there inside; and
a passage configured to connect outside of the package and the space.

10. A surface acoustic wave sensor, comprising:
a piezoelectric substrate;
a detection part on an upper surface of the piezoelectric substrate, the detection part being configured to detect a detection object which is contained in a sample;
a pair of IDT electrodes on the upper surface of the piezoelectric substrate, the pair of IDT electrodes sandwiching the detection part therebetween; and
a cover configured to cover the detection part and the pair of IDT electrodes through a space, wherein
a lower surface of the cover comprises
a first region facing the detection part, and
a pair of second regions at both sides relative to the first region in a direction of alignment of the detection part and the pair of IDT electrodes, and

the first region has a contact angle to the sample smaller than that of the pair of second regions,
wherein the lower surface of the cover comprises a groove, the groove being constituted by the first region and the pair of second regions which project downward more than the first region.

11. The surface acoustic wave sensor according to claim 10 , further comprising:
a package holding the piezoelectric substrate and the cover there inside; and
a passage configured to connect outside of the package and the space.

12. The surface acoustic wave sensor according to claim 10 , wherein
the cover comprises
a base material having the first region and the pair of said second regions, and
a film laminated on the first region of the base material, and

a lower surface of the film has a contact angle to the sample smaller than that of the pair of second regions.

13. The surface acoustic wave sensor according to claim 10 , wherein
the cover comprises
a base material having the first region and the pair of said second regions, and
a coating layer on a surface of the first region of the base material, the coating layer comprising a surface having a contact angle to the sample smaller than that of a surface of the base material, and

the coating layer is not on surfaces of the pair of second regions.

14. The surface acoustic wave sensor according to claim 10 , wherein the pair of second regions face the pair of IDT electrodes, respectively.

15. The surface acoustic wave sensor according to claim 10 ,
further comprising a lower layer portion having an upper surface on which the piezoelectric substrate is located,
wherein
the cover comprises
a middle layer portion on the lower layer portion, the middle layer portion being located at a lateral portion of the piezoelectric substrate, and
an upper layer portion on the middle layer portion, the upper layer portion being above the piezoelectric substrate and covering the piezoelectric substrate.

16. A surface acoustic wave sensor, comprising:
a piezoelectric substrate;
a detection part on an upper surface of the piezoelectric substrate, the detection part being configured to detect a detection object which is contained in a sample;
a pair of IDT electrodes on the upper surface of the piezoelectric substrate, the pair of IDT electrodes sandwiching the detection part therebetween; and
a cover configured to cover the detection part and the pair of IDT electrodes through a space;
a package holding the piezoelectric substrate and the cover there inside; and
a passage configured to connect outside of the package and the space wherein
a lower surface of the cover comprises
a first region facing the detection part, and
a pair of second regions at both sides relative to the first region in a direction of alignment of the detection part and the pair of IDT electrodes, and

the first region has a contact angle to the sample smaller than that of the pair of second regions.

17. The surface acoustic wave sensor according to claim 16 , wherein
an upper surface of the passage is located in a same plane as the first region, and
the upper surface of the passage has a contact angle to the sample smaller than that of the pair of second re

Assignees

• Kyocera Corp
• Univ Osaka

Inventors

• Tanaka Hiroyasu
• Kurioka Hideharu
• Tamiya Eiichi
• Saito Masato

Classifications

• G06F40/134

  Hyperlinking · CPC title

• A61P35/00

  Antineoplastic agents · CPC title

• H03H9/02622

  of the surface, including back surface · CPC title

• H03H9/1092

  the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's · CPC title

• H03H9/25

  Constructional features of resonators using surface acoustic waves {(devices for manipulating acoustic surface waves in general G10K11/36)} · CPC title