Multi-axis MEMS rate sensor device

US10036635B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10036635-B2
Application numberUS-201414163789-A
CountryUS
Kind codeB2
Filing dateJan 24, 2014
Priority dateJan 25, 2013
Publication dateJul 31, 2018
Grant dateJul 31, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is ideal for a MEMS rate sensor design. Low driver damping is beneficial to MEMS rate power consumption and performance, with low driving electrical potential to achieve high oscillation amplitude.

First claim

Opening claim text (preview).

What is claimed is: 1. A MEMS device comprising: a layer of silicon crystal material comprising: a first axis driver proof mass portion; a first x-axis driver fingers portion; a first x-axis rotational sensor physical data portion; a second x-axis driver proof mass portion; a second x-axis driver fingers portions; a second x-axis rotational sensor physical data portion; a first y-axis driver proof mass portion; a first y-axis driver fingers portion; a first y-axis rotational sensor physical data portion; a second y-axis driver proof mass portion; a second y-axis driver fingers portion; a second y-axis rotational sensor physical data portion; a first z-axis rotational sensor physical data portion; and a second z-axis rotational sensor physical data portion; wherein: the first and second x-axis driver proof mass portions and the first and second y-axis driver proof mass portion are coupled together with flexible beams; the first and second z-axis rotational sensor physical data portions are separated and disposed to an outside and an opposite edge of the first and second y-axis driver proof mass portions; and the first and second z-axis rotational sensor physical data portions are separated from the flexible beams; wherein: the first x-axis rotational sensor physical data portion is disposed inside and being completely surrounded by the first x-axis driver proof mass portion; the second x-axis rotational sensor physical data portion is disposed inside and being completely surrounded by the second x-axis driver proof mass portion; the first y-axis rotational sensor physical data portion is disposed inside and being completely surrounded by the first y-axis driver proof mass portion; and the second y-axis rotational sensor physical data portion is disposed inside and being completely surrounded by the second y-axis driver proof mass portion. 2. The device of claim 1 further comprising: a substrate coupled to the layer of silicon crystal material comprising: an x-axis rotation electronic feedback portion configured to convert physical data from the x-axis rotation physical data portion into x-axis rotation electrical data; a y-axis rotation electronic feedback portion configured to convert physical data from the y-axis rotation physical data portion into y-axis rotation electrical data; and a z-axis rotation electronic feedback portion configured to convert physical data from the z-axis rotation physical data portion to z-axis rotation electrical data. 3. The device of claim 2 wherein the x-axis rotation electrical data comprises an x-axis rotation capacitance value. 4. The device of claim 2 wherein the x-axis rotation sensor physical data portion comprises a first capacitor plate. 5. The device of claim 4 wherein the x-axis rotation electronic data portion comprises a second capacitor plate; and wherein the physical data comprises measurement of movement of the first capacitor plate relative to the second capacitor plate. 6. The device of claim 1 wherein the x-axis driver proof mass portion comprises a first x-axis proof mass and a second x-axis proof mass; wherein the x-axis driver fingers portion comprises a first driver fingers and a second driver fingers; and wherein the first driver fingers drives the first driver proof mass; wherein the second driver fingers drives the second driver proof mass; and wherein the first driver fingers and second driver fingers have a phase relation selected from a group consisting of: in-phase, 180 degrees out-of-phase. 7. The device of claim 1 wherein the y-axis driver proof mass portion comprises a first y-axis proof mass and a second y-axis proof mass; wherein the y-axis driver fingers portion comprises a first y-axis driver fingers and a second y-axis driver fingers; and wherein the first driver fingers drives the first y-axis proof mass; wherein the second driver fingers drives the second y-axis proof mass; and wherein the first y-axis driver fingers and second-axis driver fingers have a phase relation selected from a group consisting of: in-phase, 180 degrees out-of-phase. 8. The device of claim 1 , wherein the x-axis driver proof mass portion and the y-axis driver proof mass portion are coupled to each other with flexible beams.

Assignees

Inventors

Classifications

  • G01C19/574Primary

    the devices having two sensing masses in anti-phase motion · CPC title

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Frequently asked questions

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What does patent US10036635B2 cover?
A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is…
Who is the assignee on this patent?
Mcube Inc
What technology area does this patent fall under?
Primary CPC classification G01C19/574. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jul 31 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).