Micro electro mechanical system, semiconductor device, and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10035388-B2
Application number	US-201715460293-A
Country	US
Kind code	B2
Filing date	Mar 16, 2017
Priority date	Oct 17, 2005
Publication date	Jul 31, 2018
Grant date	Jul 31, 2018

Abstract

The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.

First claim

What is claimed is:

1. A tire comprising a wheel and a semiconductor device attached to the wheel, the semiconductor device comprising:
a transistor over a film substrate;
an insulating layer over the transistor;
a sensor over the insulating layer, the sensor comprising a first electrode and a second electrode and electrically connected to the transistor; and
a first spacer layer between the insulating layer and the sensor,
wherein the first spacer layer comprises an anisotropic conductive agent.

2. The tire according to claim 1 , wherein the semiconductor device further comprises:
a substrate over the sensor; and
a second spacer layer between the substrate and the sensor.

3. The tire according to claim 2 , wherein the second spacer layer overlaps with the first spacer layer.

4. The tire according to claim 2 , wherein a part of the first electrode and a part of the second electrode contact with both of the first and second spacer layers.

5. The tire according to claim 1 , wherein the sensor is a pressure sensor.

6. The tire according to claim 1 , wherein the sensor is a temperature sensor.

7. The tire according to claim 1 , wherein the semiconductor device is attached to a valve part of the wheel.

8. A vehicle having the tire according to claim 1 .

9. A tire comprising a wheel and a semiconductor device attached to the wheel, the semiconductor device comprising:
a control circuit including a transistor over a film substrate;
a sensor over the control circuit, the sensor comprising a first electrode and a second electrode and electrically connected to the control circuit; and
an antenna electrically connected to the control circuit; and
a first spacer layer between the control circuit and the sensor,
wherein the first spacer layer comprises an anisotropic conductive agent.

10. The tire according to claim 9 , wherein the semiconductor device further comprises:
a substrate over the sensor; and
a second spacer layer between the substrate and the sensor.

11. The tire according to claim 10 , wherein the second spacer layer overlaps with the first spacer layer.

12. The tire according to claim 10 , wherein a part of the first electrode and a part of the second electrode contact with both of the first and second spacer layers.

13. The tire according to claim 9 , wherein the sensor is a pressure sensor.

14. The tire according to claim 9 , wherein the sensor is a temperature sensor.

15. The tire according to claim 9 , wherein the semiconductor device is attached to a valve part of the wheel.

16. A vehicle having the tire according to claim 9 .

Assignees

• Semiconductor Energy Lab

Inventors

• Yamaguchi Mayumi
• Izumi Konami
• Tateishi Fuminori

Classifications

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/69393

  the material containing tantalum, e.g. Ta2O5 · CPC title

• H10P14/6939

  characterised by the metal · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title