Method of and apparatus for protecting a switch, such as a MEMS switch, and to a MEMS switch including such a protection apparatus

US10033179B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10033179-B2
Application numberUS-201514743396-A
CountryUS
Kind codeB2
Filing dateJun 18, 2015
Priority dateJul 2, 2014
Publication dateJul 24, 2018
Grant dateJul 24, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method of and apparatus for protecting a MEMS switch is provided. The method and apparatus improve the integrity of MEMS switches by reducing their vulnerability to current flow through them during switching of the MEMS switch between on and off or vice versa. The protection circuit provides for a parallel path, known as a shunt, around the MEMS component. However, components within the shunt circuit can themselves be removed from the shunt when they are not required. This improves the electrical performance of the shunt when the switch is supposed to be in an off state.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of protecting a switch having a first switch node and a second switch node, comprising: providing a shunt path in parallel with the switch, wherein the shunt path comprises a first resistor coupled to the first switch node, a second resistor coupled to the second switch node and a protection switch having a first terminal and a second terminal; coupling the first terminal to the first resistor; and coupling the second terminal to the second resistor. 2. A method as claimed in claim 1 , in which the switch is a MEMS switch. 3. A method as claimed in claim 1 , in which the protection switch comprises a MEMS switch. 4. A method as claimed in claim 1 , wherein the protection switch comprises a solid state device and the method further comprises: providing a first MEMS switch coupled in parallel with the first resistor; and providing a second MEMS switch coupled in parallel with the second resistor. 5. A method as claimed in claim 1 , wherein the first node is selectively connectable to a common node by way of a first node mechanical switch, and the second node is selectively connectable to the common node by way of a second node mechanical switch. 6. A method as claimed in claim 1 , further comprising placing the shunt path in a low impedance state prior to switching of the switch. 7. A method as claimed in claim 4 , in which the solid state device comprises a transistor or a diode. 8. A method of protecting a MEMS switch having a first switch node and a second switch node, comprising placing a shunt path in parallel with the MEMS switch, wherein the shunt path comprises a first shunt component coupled to the first switch node, a second shunt component coupled to the second switch node and a protection switch coupled to the first shunt component and the second shunt component, wherein the shunt path comprises at least one further MEMS switch. 9. A method as claimed in claim 8 , where the at least one further MEMS switch is in parallel with the first shunt component, or in parallel with a circuit for reducing a potential difference across a respective further MEMS switch. 10. A method as claimed in claim 9 , in which the first shunt component comprises a resistance. 11. A method as claimed in claim 8 , in which the shunt path comprises at least one transistor switch in series with the at least one MEMS switch. 12. A MEMS switch having a first switch node and a second switch node, the MEMS switch arranged in combination with a protection circuit to selectively provide a low impedance path between the first and second switch nodes of the MEMS switch, the protection circuit comprising a first protection circuit MEMS switch, a second protection circuit MEMS switch, and a shunt component configured to limit the voltage across or the current through the first protection circuit MEMS switch around a switch transition of the first protection circuit MEMS switch, wherein the shunt component is in series or in parallel with the first protection circuit MEMS switch, and wherein the first protection circuit MEMS switch has a first node connected to the first switch node, and a second node connected to a first current flow node of a semiconductor device, and the second protection circuit MEMS switch has a first node connected to the second switch node and a second node connected to a second current flow node of the semiconductor device. 13. A MEMS switch having a first switch node and a second switch node, the MEMS switch arranged in combination with a protection circuit to selectively provide a low impedance path between the first and second switch nodes of the MEMS switch, the protection circuit comprising a first protection circuit MEMS switch, a second protection circuit MEMS switch, and a shunt component configured to limit the voltage across or the current through the first protection circuit MEMS switch around a switch transition of the first protection circuit MEMS switch, wherein the shunt component is in series or in parallel with the first protection circuit MEMS switch, and wherein the first protection circuit MEMS switch has a first node connected between the first switch node and a semiconductor switch or a semiconductor switch array, and the second protection circuit MEMS switch is connected between the second switch node and the semiconductor switch or the semiconductor switch array, and where the semiconductor switch or the semiconductor switch array is operable to connect the first and second protection circuit MEMS switches together or to a further node. 14. A MEMS switch as claimed in claim 13 , in which the switch and the protection circuit are provided in a shared integrated circuit or chip package. 15. An integrated circuit comprising at least one MEMS switch as claimed in claim 13 . 16. An integrated circuit as claimed in claim 15 , in which the MEMS switch is formed on a first substrate and at least some components of the protection circuit are formed on a second substrate, and interconnections are made between nodes of the first and second substrates. 17. A MEMS switch as claimed in claim 13 , further including a controller for controlling operation of the protection circuit and the MEMS switch. 18. A MEMS device comprising a first MEMS switch and a second MEMS switch, a shunt resistor connected in parallel with the second MEMS switch, and a control circuit for controlling the first and second MEMS switches such that the second MEMS switch is always closed when the first MEMS switch is switching between open and closed, wherein a terminal of the second MEMS switch is coupled to a diode. 19. A method of protecting a switch, comprising providing a shunt path in parallel with the switch, wherein the shunt path comprises at least one solid state switch in series with a high stop filter comprising an inductor; or an amplifier arranged to selectively reduce a potential difference across the switch. 20. A MEMS switch comprising a first switch node and a second switch node in association with a shunt path in parallel with the MEMS switch, wherein the shunt path comprises at least one solid state switch in series with a first inductor coupled to the first switch node and a second inductor coupled to the second switch node. 21. The MEMS switch as claimed in claim 13 , wherein the shunt component is a resistor with a value of at least 1 MOhm. 22. The method as claimed in claim 8 , further comprising: controlling the at least one further MEMS switch to close from an open state while the MEMS switch is at an open state; and subsequently controlling the MEMS switch to close. 23. The method as claimed in claim 8 , further comprising: selectively coupling the first shunt component to a ground plane or a signal line. 24. The method as claimed in claim 8 , further comprising: selectively matching a voltage at the first switch node with a voltage at the second switch node with an active circuit. 25. The method as claimed in claim 11 , further comprising: controlling the at least one further MEMS switch to close from an open state while the MEMS switch is at an open state; subsequently controlling the at least one transistor switch to close from an open state; and subsequently controlling the MEMS switch to close. 26. A circuit comprising the MEMS switch as claimed in claim 12 , wherein the MEMS switch is a first MEMS switch, and the circuit further comprises: a se

Assignees

Inventors

Classifications

  • Micromechanical thermal relay · CPC title

  • H02H9/04Primary

    responsive to excess voltage (lightning arrestors H01C7/12, H01C8/04, H01G9/18, H01T) · CPC title

  • Contacts shunted by static switch means · CPC title

  • Combinations of mechanical switches and static switches, the latter being controlled by the former · CPC title

  • making use of micromechanics · CPC title

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What does patent US10033179B2 cover?
A method of and apparatus for protecting a MEMS switch is provided. The method and apparatus improve the integrity of MEMS switches by reducing their vulnerability to current flow through them during switching of the MEMS switch between on and off or vice versa. The protection circuit provides for a parallel path, known as a shunt, around the MEMS component. However, components within the shunt…
Who is the assignee on this patent?
Analog Devices Global Unlimited Co
What technology area does this patent fall under?
Primary CPC classification H02H9/04. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 24 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).