Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element

Patent metadata

Field	Value
Publication number	US-10033154-B2
Application number	US-201514622363-A
Country	US
Kind code	B2
Filing date	Feb 13, 2015
Priority date	Mar 3, 2010
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

A semiconductor optical element includes a semiconductor layer portion that includes an optical waveguide layer. The semiconductor layer portion contains a first impurity having a function of suppressing atomic vacancy diffusion and a second impurity having a function of promoting atomic vacancy diffusion, between a topmost surface of the semiconductor layer portion and the optical waveguide layer. The semiconductor layer portion includes two or more regions that extend in a deposition direction. At least one of the two or more regions contains both the first impurity and the second impurity. The two or more regions have different degrees of disordering in the optical waveguide layer achieved through atomic vacancy diffusion and different band gap energies of the optical waveguide layer.

First claim

What is claimed is:

1. A semiconductor optical element comprising:
a semiconductor layer portion that includes an optical waveguide layer, wherein
the semiconductor layer portion contains a first impurity having a function of suppressing atomic vacancy diffusion and a second impurity having a function of promoting atomic vacancy diffusion, between a topmost surface of the semiconductor layer portion and the optical waveguide layer,
the semiconductor layer portion includes two or more regions that extend in a deposition direction,
at least one of the two or more regions contains both the first impurity and the second impurity in a topmost layer of the semiconductor layer portion, and
the two or more regions have different degrees of disordering in the optical waveguide layer achieved through atomic vacancy diffusion and different band gap energies of the optical waveguide layer,
an entirety of a first of the two or more regions is formed along a first plane that extends in the deposition direction, an entirety of a second of the two or more regions is formed along a second plane that extends in the deposition direction, the first plane being arranged adjacent to the second plane,
the topmost layer is a contact layer, and
the second impurity is not zinc.

2. The semiconductor optical element according to claim 1 , wherein
the two or more regions includes different contents of the at least one of the impurities.

3. The semiconductor optical element according to claim 2 , wherein
the two or more regions in the semiconductor layer portion has different contents of the first impurity,
one of the two or more regions with a higher content of the first impurity has a lower band gap energy of the optical waveguide layer.

4. The semiconductor optical element according to claim 2 , wherein
the two or more regions in the semiconductor layer portion has different contents of the second impurity, and
one of the two or more regions with a higher content of the second impurity has a higher band gap energy of the optical waveguide layer.

5. The semiconductor optical element according to claim 1 , wherein
at least one border between the two or more regions is formed along a light guiding direction of the optical waveguide layer, and
the two or more regions have different effective refractive indices.

6. The semiconductor optical element according to claim 1 , wherein
the semiconductor layer portion includes an active layer as the optical waveguide layer, and
at least one border between the two or more regions is formed in a manner traversing a light guiding direction of the optical waveguide layer.

7. The semiconductor optical element according to claim 2 , wherein
the topmost layer region has a higher content of one of the first impurity and the second impurity with a lower diffusion coefficient.

Assignees

• Furukawa Electric Co Ltd
• Furukawa Electronic Co Ltd

Inventors

• Kinugawa Kouhei
• Taniguchi Hidehiro
• Tajima Masafumi
• Ishii Hirotatsu
• Namegaya Takeshi

Classifications

• H10P14/3444

  P-type · CPC title

• H10P14/3421

  Arsenides · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H01S5/3211

  characterised by special cladding layers, e.g. details on band-discontinuities · CPC title

• H01S5/2068

  obtained by radiation treatment or annealing · CPC title