Opto-electronic device and pulse processing method

Patent metadata

Field	Value
Publication number	US-10033149-B2
Application number	US-201214395570-A
Country	US
Kind code	B2
Filing date	Apr 20, 2012
Priority date	Apr 20, 2012
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

An opto-electronic device (100) for processing optical and electric pulses includes a photoconductor device (10) with a sensor section (11) which is made of a band gap material and which has electrical sensor contacts (12, 13), and a signal processing device (20) which is connected with the sensor contacts (12, 13), wherein the photoconductor device (10) is adapted to create a photocurrent between the sensor contacts (12, 13) in response to an irradiation with ultra-short driving laser pulses (1) having a photon energy smaller than the energy band gap of the band gap material, having a non-zero electric field component (3) oriented parallel with a line (4) between the electrical sensor contacts (12, 13), and causing a charge carrier displacement in the band gap material, and wherein the signal processing device (20) is configured for an output of an electric signal being characteristic for at least one of carrier-envelope phase (CE phase), intensity, temporal properties, spectral intensity and spectral phase of the driving laser pulses (1). Furthermore, a laser source device including the opto-electronic device and pulse processing method for processing optical and electric pulses are described.

First claim

The invention claimed is:

1. A pulse processing method for processing optical and electric pulses, comprising the steps of
creating ultra-short driving laser pulses having an oscillating electric field oscillating at optical frequencies with a pulse source device,
irradiating a photoconductor device which operates unbiased and which includes a sensor section which is made of a band gap material and which has electrical sensor contacts, wherein a photon energy of the driving laser pulses is smaller than an energy band gap of the band gap material and wherein the driving laser pulses have a few-cycle electromagnetic waveform with the electric field and a non-zero electric field component oriented parallel with a line perpendicular to edges of the electrical sensor contacts, said few-cycle electromagnetic waveform having a pulse duration corresponding to a full-width half-maximum of a time-dependent pulse intensity, and a light field period of a carrier wave, wherein the pulse duration at most is one order of magnitude larger than the light field period, wherein
the oscillating electric field generates charge carriers in the band gap material by a non-linear interaction between the driving laser pulses and the band gap material and this same oscillating electric field directly drives a displacement of the charge carriers, resulting in a pulse-shaped photocurrent between the sensor contacts,
amplifying and converting the photocurrent and generating an electric signal being characteristic for at least one of CE phase, intensity, temporal properties, spectral intensity and spectral phase of the driving laser pulses, and
output of the electric output signal.

2. The pulse processing method according to claim 1 , wherein
the photoconductor device is irradiated with the driving laser pulses having a spot size at the sensor section being equal or larger than a length of a shortest line joining the electrical sensor contacts.

3. The pulse processing method according to claim 1 , including the step of
providing the electric signal as an electric control signal for controlling the pulse source device creating the driving laser pulses.

4. The pulse processing method according to claim 1 , including the step of
providing the electric signal as at least one of a logic operator signal, a switching signal and a sampling signal for sampling of a transient electric field of the driving laser pulses.

5. The pulse processing method according to claim 1 , wherein
the electric signal is a function of the driving laser pulses oscillating with at least one of frequencies above 100 THz and bandwidths above 100 THz.

6. The pulse processing method according to claim 1 , wherein
the electric signal is a result of an operation performed at clock frequencies above 100 THz, on information encoded in at least one of carrier-envelope phase (CE phase), intensity, temporal properties, spectral intensity and spectral phase of the driving laser pulses.

7. The pulse processing method according to claim 1 , wherein
the energy band gap of the band gap material is larger than a thermal energy available at an operation temperature of the opto-electronic device.

8. The pulse processing method according to claim 1 , further including the step of
adjusting a temperature of the photoconductor device with a cooling device.

Assignees

• Schiffrin Agustin
• Ernstorfer Ralph
• Krausz Ferenc
• Paasch Colberg Tim
• Max Planck Gesellschaft

Inventors

• Schiffrin Agustin
• Ernstorfer Ralph
• Krausz Ferenc
• Paasch-Colberg Tim

Classifications

• G01J11/00 Primary

  Measuring the characteristics of individual optical pulses or of optical pulse trains · CPC title

• Y02E10/544

  Solar cells from Group III-V materials · CPC title

• H01S3/10 Primary

  Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating · CPC title

• H01L31/0328

  Electricity · mapped topic

• H01L31/09

  Electricity · mapped topic