Device using a piezoelectric element and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-10032977-B2
Application number	US-201514817957-A
Country	US
Kind code	B2
Filing date	Aug 4, 2015
Priority date	Aug 5, 2014
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

An inkjet printing head 1 includes a piezoelectric element 6 having a lower electrode 7, a piezoelectric film 8 formed above the lower electrode 7, and an upper electrode 9 formed above the piezoelectric film 8, a hydrogen barrier film 13 covering an entirety of a side surface of the upper electrode 9 and the piezoelectric film 8, and an interlayer insulating film 14 that has an opening 17 at an upper surface center of the upper electrode 9, is laminated on the hydrogen barrier film 13, and faces the entirety of the side surface of the upper electrode 9 and the piezoelectric film 8 across the hydrogen barrier film 13.

First claim

What is claimed is:

1. A device using a piezoelectric element, comprising:
a substrate having a cavity;
a movable film held on the substrate so as to face the cavity;
a piezoelectric element disposed above the movable film, and having a lower electrode, a piezoelectric film formed above the lower electrode, and an upper electrode formed above the piezoelectric film;
a hydrogen barrier film covering an entirety of a side surface of the upper electrode and the piezoelectric film;
an interlayer insulating film having an opening at an upper surface center of the upper electrode, being laminated on the hydrogen barrier film, and facing the entirety of the side surface of the upper electrode and the piezoelectric film across the hydrogen barrier film; and
a metal barrier film is interposed between the movable film and the piezoelectric element.

2. The device using the piezoelectric element according to claim 1 , wherein the metal barrier film is an Al 2 O 3 film.

3. A device using a piezoelectric element, comprising:
a substrate having a cavity;
a movable film held on the substrate so as to face the cavity;
a piezoelectric element disposed above the movable film, and having a lower electrode, a piezoelectric film formed above the lower electrode, and an upper electrode formed above the piezoelectric film;
a hydrogen barrier film covering an entirety of a side surface of the upper electrode and the piezoelectric film;
an interlayer insulating film having an opening at an upper surface center of the upper electrode, being laminated on the hydrogen barrier film, and facing the entirety of the side surface of the upper electrode and the piezoelectric film across the hydrogen barrier film;
wherein above the piezoelectric element, a contact hole, exposing a portion of the upper electrode, is formed in the interlayer insulating film, and
wherein above the interlayer insulating film, there is formed a wiring having one end portion connected to the upper electrode via the contact hole and another end portion lead out to an outer side of the piezoelectric element; and
a passivation film formed just in a region in which the wiring above the interlayer insulating film is present and covering the wiring.

4. The device using the piezoelectric element according to claim 1 , wherein the hydrogen barrier film is an Al 2 O 3 film.

5. The device using the piezoelectric element according to claim 1 , wherein the interlayer insulating film is an SiO film.

6. The device using the piezoelectric element according to claim 3 , wherein the passivation film is an SiN film.

7. The device using the piezoelectric element according to claim 1 , wherein the upper electrode is constituted of a laminated film of an IrO 2 film formed above the piezoelectric film and an Ir film formed above the IrO 2 film.

8. The device using the piezoelectric element according to claim 1 , wherein above the piezoelectric element, a contact hole, exposing a portion of the upper electrode, is formed in the interlayer insulating film, and
above the interlayer insulating film, there is formed a wiring having one end portion connected to the upper electrode via the contact hole and another end portion lead out to an outer side of the piezoelectric element.

9. The device using the piezoelectric element according to claim 2 , wherein above the piezoelectric element, a contact hole, exposing a portion of the upper electrode, is formed in the interlayer insulating film, and
above the interlayer insulating film, there is formed a wiring having one end portion connected to the upper electrode via the contact hole and another end portion lead out to an outer side of the piezoelectric element.

10. The device using the piezoelectric element according to claim 1 , wherein the cavity is formed to a rectangular shape in a plan view as viewed from a direction normal to a major surface of the movable film,
the movable film is formed to a rectangular shape matching a cavity edge in the plan view,
the piezoelectric film, in the plan view, is a rectangle having a width shorter than a width in a short direction of the movable film and a length shorter than a length in a long direction of the movable film, with both end edges and both side edges thereof being receded further toward an interior of the movable film than both end edges and both side edges, respectively, of the movable film, and
the upper electrode, in the plan view, is a rectangle having a width shorter than the width in a short direction of the movable film and a length shorter than the length in a long direction of the movable film, with both end edges and both side edges thereof being receded further toward the interior of the movable film than both end edges and both side edges, respectively, of the movable film.

11. The device using the piezoelectric element according to claim 2 , wherein the cavity is formed to a rectangular shape in a plan view as viewed from a direction normal to a major surface of the movable film,
the movable film is formed to a rectangular shape matching a cavity edge in the plan view,
the piezoelectric film, in the plan view, is a rectangle having a width shorter than a width in a short direction of the movable film and a length shorter than a length in a long direction of the movable film, with both end edges and both side edges thereof being receded further toward an interior of the movable film than both end edges and both side edges, respectively, of the movable film, and
the upper electrode, in the plan view, is a rectangle having a width shorter than the width in a short direction of the movable film and a length shorter than the length in a long direction of the movable film, with both end edges and both side edges thereof being receded further toward the interior of the movable film than both end edges and both side edges, respectively, of the movable film.

12. The device using the piezoelectric element according to claim 8 , wherein the cavity is formed to a rectangular shape in a plan view as viewed from a direction normal to a major surface of the movable film,
the movable film is formed to a rectangular shape matching a cavity edge in the plan view,
the piezoelectric film, in the plan view, is a rectangle having a width shorter than a width in a short direction of the movable film and a length shorter than a length in a long direction of the movable film, with both end edges and both side edges thereof being receded further toward an interior of the movable film than both end edges and both side edges, respectively, of the movable film, and
the upper electrode, in the plan view, is a rectangle having a width shorter than the width in a short direction of the movable film and a length shorter than the length in a long direction of the movable film, with both end edges and both side edges thereof being receded further toward the interior of the movable film than both end edges and both side edges, respectively, of the movable film.

13. A method for manufacturing a device using a piezoelectric element comprising:
a first step of forming, above a movable film, a piezoelectric element including a lower electrode, a piezoelectric film formed above the lower electrode, and an upper electrode formed above the piezoelectric film;
a second step of forming a hydrogen barrier film covering front surfaces of the movable film and the piezoelectric element;
a third step of forming an interlayer insulating film above the hydrogen barrier film;
a fourth step of forming, above the piezoelectric element, a contact hole, exposing a portion of the upper electrode, in the hydrogen barrier film and the interlayer insulati

Assignees

• Rohm Co Ltd

Inventors

• Fujimori Yoshikazu
• Date Tomohiro

Classifications

• B41J2/1642

  thin film formation by CVD [chemical vapor deposition] · CPC title

• B41J2/1629

  wet etching · CPC title

• B41J2/161

  of film type, deformed by bending and disposed on a diaphragm · CPC title

• B41J2/1646

  thin film formation by sputtering · CPC title

• B41J2/1628 Primary

  dry etching · CPC title