Semiconductor photosensor for infrared radiation

Patent metadata

Field	Value
Publication number	US-10032951-B2
Application number	US-201414432886-A
Country	US
Kind code	B2
Filing date	Mar 31, 2014
Priority date	Apr 4, 2013
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

A photosensor for the detection of infrared radiation in the wavelength range of 1 to 1000 micrometers consists of a semiconductor substrate with a highly doped interaction volume for the incoming radiation. At the edge of this highly doped region, an extended gate electrode is placed consisting of a conducting material on top of an insulating layer. On the other side of the gate electrode, another highly doped semiconductor region is placed, acting as a charge collector. Through free carrier absorption in the interaction volume, incoming photons impart their energy on mobile charge carriers. In the case of free electrons, the gate electrode is biased slightly below the reset voltage of the interaction volume, so that the electrons carrying the additional energy of the absorbed photons can predominantly make the transition from the interaction volume across the gate electrode area to the charge collector volume.

First claim

The invention claimed is:

1. A photosensor for detecting infrared radiation in the wavelength range of 1 to 1000 micrometers, comprising:
a main region of a semiconductor substrate;
a highly doped interaction volume comprising a doping level of greater than 10 18 cm −3 and free charge carriers that interact with the incoming radiation in the semiconductor substrate through free carrier absorption;
an adjacent gate electrode including a conducting material on top of an insulated layer, the adjacent gate electrode being an extended structure adjacent to the interaction volume; and
an adjoining highly doped collector region acting as a charge collector, the collector region essentially consisting of a highly doped semiconductor zone with a doping level of greater than 10 18 cm −3 and being an extended structure adjacent to the gate electrode,
wherein the interaction volume is electrically biased to a first voltage V B ,
the collector region is electrically biased to a second voltage V S , which is higher than the first voltage V B in case photo-excited electrons should be collected, and which is lower than the first voltage V B in case photo-excited holes should be collected,
the incoming photons impart their energy through free carrier absorption on mobile charge carriers in the interaction volume, producing photo-excited electrons in case the free charge carriers are electrons, or producing photo-excited holes in case the free charge carriers are holes,
the gate electrode is biased to a third voltage V G , so that a potential barrier for the photo-excited charge carriers in the interaction volume is created, such that the energy imparted by the incoming photons is sufficient for the photo-excited charge carriers to overcome the potential barrier, and the photo-excited charge carriers can be collected in the collector region for subsequent electronic detection, and
the photosensor is capable of detecting infrared radiation in an entirety of the wavelength range of 1 to 1000 micrometers.

2. The photosensor according to claim 1 , wherein a region of the interaction volume is bordered on at least one side by the gate electrode and the collector region.

3. The photosensor according to claim 1 , wherein the collector region is surrounded by the gate electrode which is surrounded by a region of the interaction volume.

4. The photosensor according to claim 3 , wherein the collector region has a rectangular structure, a circular structure or a polygonal structure.

5. The photosensor according to claim 1 , further comprising;
an amplifier or circuit that is connected to the collector region, the amplifier or circuit sensing the second voltage V S and producing an output voltage V out .

6. The photosensor according to claim 5 , wherein the amplifier or circuit includes a reset switch that resets the collector region to the second voltage V S .

7. The photosensor according to claim 6 , wherein the reset switch periodically resets the collector region.

8. The photosensor according to claim 5 , wherein the amplifier or circuit includes a sense node and a source-follower transistor, the sense node being reset to the second voltage V S by the reset switch and being connected to a gate of the source-follower transistor.

9. The photosensor according to claim 8 , wherein the sense node is connected to a programmable current source, with which an offset current can be subtracted from the signal current accumulated by the collector region, wherein this programmable current source provides for increased dynamic range of the photo sensor, since a substantial part of the dark current can be subtracted from the signal current before its electronic detection.

10. The photosensor according to claim 1 , wherein the photosensor is a three-terminal device.

11. The photosensor according to claim 1 , wherein the photosensor is a Complementary Metal Oxide Semiconductor (CMOS) image sensor.

12. The photosensor according to claim 1 , wherein no more than three voltages are selected in operation.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Seitz Peter

Classifications

• H01L31/1037

  Electricity · mapped topic

• H01L31/103

  Electricity · mapped topic

• H01L27/14649

  Electricity · mapped topic

• G01J1/46

  using a capacitor · CPC title

• H01L31/02019

  Electricity · mapped topic