Semiconductor device with a semiconductor via and laterally connected electrode

Patent metadata

Field	Value
Publication number	US-10032878-B2
Application number	US-201113241771-A
Country	US
Kind code	B2
Filing date	Sep 23, 2011
Priority date	Sep 23, 2011
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

A semiconductor device includes a semiconductor body having a first surface and a second surface, at least one electrode arranged in at least one trench extending from the first surface into the semiconductor body, and a semiconductor via extending in a vertical direction of the semiconductor body within the semiconductor body to the second surface. The semiconductor via is electrically insulated from the semiconductor body by a via insulation layer. The at least one electrode extends in a first lateral direction of the semiconductor body through the via insulation layer and is electrically connected to the semiconductor via.

First claim

What is claimed is:

1. A semiconductor transistor device, comprising:
a semiconductor body having a first surface and a second surface;
at least one gate electrode arranged in at least one trench extending from the first surface into the semiconductor body;
a semiconductor via extending in a vertical direction of the semiconductor body within the semiconductor body to the second surface, the semiconductor via being electrically insulated from the semiconductor body by a via insulation layer wherein the via insulation layer is perpendicular to the first surface; and
wherein the at least one gate electrode extends in the semiconductor body in a first lateral direction of the semiconductor body toward the semiconductor via and through the via insulation layer into the semiconductor via,
wherein the semiconductor via comprises the same crystalline structure and semiconductor material as the surrounding semiconductor body,
wherein the at least one gate electrode comprises a material different from the semiconductor via material, or the at least one gate electrode comprises a crystalline structure different from the semiconductor via crystalline structure,
wherein the semiconductor transistor device further comprises:
a source region, a body region, a drift region and a drain region, the body region being arranged between the source region and the drift region and the drift region being arranged between the body region and the drain region,
wherein the source region, the body region, the drift region, and the drain region are arranged in the semiconductor body,
wherein the source region and the drain region are spaced apart in the vertical direction of the semiconductor body;
a source electrode arranged on the first surface and electrically connected to the source region;
a drain electrode arranged on the second surface and electrically connected to the drain region; and
a gate dielectric dielectrically insulating the at least one gate electrode from the source region and the body region.

2. The semiconductor transistor device of claim 1 , wherein the drift region and the drain region have the same doping type.

3. The semiconductor transistor device of claim 1 , wherein the drift region and the drain region have complementary doping types.

4. The semiconductor transistor device of claim 1 , further comprising:
a field electrode arranged in the at least one trench below the at least one gate electrode with respect to the first surface and dielectrically insulated from the at least one gate electrode; and
a field electrode dielectric dielectrically insulating the field electrode from the semiconductor body.

5. The semiconductor transistor device of claim 4 , wherein the field electrode in the first lateral direction is arranged distant to the via insulation layer.

6. The semiconductor transistor device of claim 1 , wherein the semiconductor via further comprises a contact region electrically contacted by the at least one gate electrode, the contact region having a higher doping concentration than regions of the semiconductor via adjoining the contact region.

7. The semiconductor transistor device of claim 1 , further comprising a plurality of transistor cells, each cell comprising a source zone, a body zone and a gate electrode.

8. The semiconductor transistor device according to claim 1 , wherein the at least one gate electrode is electrically connected to a sensor integrated in the semiconductor body in a region of the first surface.

9. The semiconductor transistor device of claim 8 , wherein the sensor is one of a temperature sensor or a current sensor.

10. The semiconductor transistor device of claim 1 , further comprising at least two gate electrodes and at least two semiconductor vias, each of the gate electrodes being connected to one of the semiconductor vias.

11. The semiconductor transistor device of claim 1 , wherein the source electrode includes an electrode section extending through the source region and into the body region.

12. A semiconductor transistor device, comprising:
a semiconductor body having a first surface and a second surface;
at least one gate electrode arranged in at least one trench extending from the first surface into the semiconductor body;
a semiconductor via extending in a vertical direction of the semiconductor body within the semiconductor body to the second surface, the semiconductor via being electrically insulated from the semiconductor body by a via insulation layer wherein the via insulation layer is perpendicular to the first surface; and
wherein the at least one gate electrode extends in the semiconductor body in a first lateral direction of the semiconductor body toward the semiconductor via and through the via insulation layer into the semiconductor via,
wherein the semiconductor via comprises the same crystalline structure and semiconductor material as the surrounding semiconductor body,
wherein the at least one gate electrode comprises a material different from the semiconductor via material, or the at least one gate electrode comprises a crystalline structure different from the semiconductor via crystalline structure,
wherein the semiconductor body includes a semiconductor substrate and an epitaxial layer formed on the semiconductor substrate,
wherein the semiconductor transistor device further comprises:
a source region, a body region, a drift region and a drain region, the body region being arranged between the source region and the drift region and the drift region being arranged between the body region and the drain region,
wherein the source region, the body region, the drift region, and the drain region are arranged in the semiconductor body,
wherein the source region and the drain region are spaced apart in the vertical direction of the semiconductor body;
a source electrode arranged on the first surface and electrically connected to the source region;
a drain electrode arranged on the second surface and electrically connected to the drain region; and
a gate dielectric dielectrically insulating the at least one gate electrode from the source region and the body region.

Assignees

• Meiser Andreas Peter
• Zundel Markus
• Infineon Technologies Ag

Inventors

• Meiser Andreas Peter
• Zundel Markus

Classifications

• H10W20/2125

  Top-view shapes · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10W20/021

  of interconnections within wafers or substrates · CPC title

• H10W20/20

  Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] · CPC title

• H01L2924/00

  Electricity · mapped topic