Image sensor with dual layer photodiode structure

Patent metadata

Field	Value
Publication number	US-10032810-B2
Application number	US-201514793480-A
Country	US
Kind code	B2
Filing date	Jul 7, 2015
Priority date	Jun 29, 2010
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

An image system with a dual layer photodiode structure is provided for processing color images. In particular, the image system can include an image sensor that can include photodiodes with a dual layer photodiode structure. In some embodiments, the dual layer photodiode can include a first layer of photodiodes (e.g., a bottom layer), an insulation layer disposed on the first layer of photodiodes, and a second layer of photodiodes (e.g., a top layer) disposed on the insulation layer. The first layer of photodiodes can include one or more suitable pixels (e.g., green, blue, clear, luminance, and/or infrared pixels). Likewise, the second layer of photodiodes can include one or more suitable pixels (e.g., green, red, clear, luminance, and/or infrared pixels). An image sensor incorporating dual layer photodiodes can gain light sensitivity with additional clear pixels and maintain luminance information with green pixels.

First claim

What is claimed is:

1. An image sensor comprising:
a substrate having a major surface for receiving impinging light; and
a photodiode array disposed within the substrate, wherein the photodiode array comprises a 2×2 unit cell, the 2×2 unit cell for repeating within the substrate and comprising:
a first photodiode in the 2×2 unit cell comprising a first blue pixel in a top layer of the substrate disposed on top of a first red pixel in a bottom layer of the substrate, wherein the top layer is closer to the major surface than the bottom layer;
a first insulating layer disposed between the red pixel and the first blue pixel;
a magenta color filter disposed overlapping the first photodiode;
a second photodiode in the 2×2 unit cell comprising a first green pixel disposed in the bottom layer and a third green pixel in the top layer and disposed on top of the first green pixel;
a third photodiode in the 2×2 unit cell comprising a second green pixel disposed in the bottom layer and a fourth green pixel in the top layer and disposed on top of the second green pixel diagonally disposed from the second photodiode in the 2×2 unit cell; and
a fourth photodiode in the 2×2 unit cell diagonally disposed from the first photodiode in the 2×2 unit cell comprising a pixel selected from a group consisting of a first clear pixel, a first infrared pixel, a blue pixel in the top layer disposed on top of a green pixel in the bottom layer, a green pixel in the top layer and disposed on top of a red pixel in the bottom layer, a green pixel in the top layer and disposed on top of an infrared pixel in the bottom layer, and a blue pixel in the top layer and disposed on top of an infrared pixel in the bottom layer.

2. The image sensor of claim 1 further comprising:
a second insulating layer disposed between the third green pixel and the first green pixel; and
a third insulating layer disposed between fourth green pixel and the second green pixel.

3. The image sensor of claim 1 , wherein the fourth photodiode comprises the first infrared pixel.

4. The image sensor of claim 3 wherein:
the first infrared pixel is disposed in the bottom layer; and
the image sensor further comprises a second infrared pixel in the top layer and disposed on top of the first infrared pixel.

5. The image sensor of claim 3 further comprising an infrared cut-off filter disposed overlapping at least a portion of the photodiode array.

6. The image sensor of claim 1 , wherein the fourth photodiode comprises the first clear pixel.

7. The image sensor of claim 6 , wherein:
the first clear pixel is disposed in the bottom layer; and
the image sensor further comprises:
a second clear pixel in the top layer and disposed on top of the first clear pixel; and
a second insulating layer disposed between the second clear pixel and the first clear pixel.

8. The image sensor of claim 1 further in combination with a control structure configured to:
bin the second and third photodiodes along a first direction to provide a first pixel group;
bin the first and fourth photodiodes along a second direction to provide a second pixel group;
combine the first pixel group and the second pixel group to provide a binned pixel cluster; and
interpolate the binned pixel cluster to provide an output pixel image.

9. An image sensor comprising:
a substrate having a major surface for receiving impinging light; and
a photodiode array disposed within the substrate, wherein the photodiode array comprises a 2×2 unit cell, the 2×2 unit cell for repeating within the substrate and comprising:
a first photodiode in the 2×2 unit cell comprising a first blue pixel in a first layer of the substrate disposed on top of a first red pixel in a second layer of the substrate, wherein the first layer is closer to the major surface than the second layer;
a first insulating layer disposed between the red pixel and the first blue pixel;
a magenta color filter disposed overlapping the first photodiode;
a second photodiode in the 2×2 unit cell comprising a first pixel sensitive to at least two wavelengths of light disposed in the second layer and a third pixel in the first layer and disposed on top of the first pixel;
a third photodiode in the 2×2 unit cell comprising a second pixel sensitive to the at least two wavelengths of light disposed in the second layer and a fourth pixel in the first layer and disposed on top of the second pixel, wherein the third photodiode is diagonally disposed from the second photodiode in the 2×2 unit cell; and
a fourth photodiode in the 2×2 unit cell diagonally disposed from the first photodiode in the 2×2 unit cell comprising a pixel selected from a group consisting of a first green pixel, a clear pixel, a green pixel in the first layer and disposed on top of an infrared pixel in the second layer, and a blue pixel in the first layer and disposed on top of an infrared pixel in the second layer.

10. The image sensor of claim 9 , wherein:
the second photodiode comprises a first clear pixel; and
the third photodiode comprises a second clear pixel.

11. The image sensor of claim 10 , wherein the fourth photodiode comprises the first green pixel.

12. The image sensor of claim 11 , wherein:
the first green pixel is in the second layer; and
the image sensor further comprises a second green pixel in the first layer and disposed on top of the first green pixel.

13. The image sensor of claim 10 , wherein:
the first clear pixel and the second clear pixel are disposed in the second layer;
the second photodiode further comprises a third clear pixel in the first layer and disposed on top of the first clear pixel; and
the third photodiode further comprises a fourth clear pixel in the first layer and disposed on top of the second clear pixel.

14. The image sensor of claim 9 , wherein:
the second photodiode comprises a first clear pixel;
the third photodiode comprises a second clear pixel; and
the fourth photodiode comprises the clear pixel.

15. An image sensor comprising:
a substrate having a major surface for receiving impinging light; and
a photodiode array disposed within the substrate, wherein the photodiode array comprises a 2×2 unit cell, the 2×2 unit cell for repeating within the substrate and comprising:
a first photodiode in the 2×2 unit cell comprising a first blue pixel in a top layer of the substrate disposed on top of a first red pixel in a bottom layer of the substrate, wherein the top layer is closer to the major surface than the bottom layer;
a first insulating layer disposed between the red pixel and the first blue pixel;
a magenta color filter disposed overlapping the first photodiode;
a second photodiode in the 2×2 unit cell comprising a first green pixel disposed in the bottom layer and a third green pixel in the top layer and disposed on top of the first green pixel;
a third photodiode in the 2×2 unit cell comprising a second green pixel disposed in the bottom layer and a fourth green pixel in the top layer and disposed on top of the second green pixel, wherein diagonally disposed from the second photodiode in the 2×2 unit cell; and
a fourth photodiode in the 2×2 unit cell comprising a first infrared pixel diagonally disposed from the first photodiode in the 2×2 unit cell.

16. The image sensor of claim 15 further comprising:
a second insulating layer disposed between the third green pixel and the first green pixel; and
a third insulating layer disposed between the fourth green pixel and the second green pixel.

17. The image sensor of claim 15 , wherein:
the first infrared p

Assignees

• Semiconductor Components Ind Llc

Inventors

• Bai Yingjun
• Sun Qun

Classifications

• H04N25/134

  based on three different wavelength filter elements · CPC title

• H04N23/843

  Demosaicing, e.g. interpolating colour pixel values · CPC title

• H04N9/045

  Electricity · mapped topic

• H01L27/14652

  Electricity · mapped topic

• H01L27/14647

  Electricity · mapped topic