Manufacturing method of semiconductor device and semiconductor manufacturing apparatus

Patent metadata

Field	Value
Publication number	US-10032658-B2
Application number	US-201715724744-A
Country	US
Kind code	B2
Filing date	Oct 4, 2017
Priority date	Jan 18, 2013
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

A manufacturing method of a semiconductor device according to the present invention comprises cleaning a semiconductor substrate. A first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid are supplied on a surface of the semiconductor substrate. Alternatively, the semiconductor substrate is immersed in the first chemical liquid coated with the second chemical liquid. The semiconductor substrate is then dried.

First claim

The invention claimed is:

1. A surface treatment method of a semiconductor substrate comprising:
cleaning a semiconductor substrate;
rinsing the surface of the semiconductor substrate with deionized water;
displacing the deionized water with alcohol;
supplying a first chemical liquid for forming a water-repellent protection film on a surface of the semiconductor substrate and a second chemical liquid for coating the first chemical liquid coating the surface of the semiconductor substrate, the second chemical liquid not being mixed with the first chemical liquid and not reacting to the first chemical liquid, the first chemical liquid being below the second chemical liquid, and the second chemical liquid preventing the first chemical liquid from contacting with water in an atmosphere around the semiconductor substrate; and
displacing the first chemical liquid and the second chemical liquid with alcohol;
rinsing the alcohol with deionized water; and
drying the semiconductor substrate rinsed with the deionized water, wherein
the first chemical liquid is an insoluble water-repellent agent and the second chemical liquid is a soluble chemical liquid,
a specific gravity of the second chemical liquid is lower than a specific gravity of the first chemical liquid.

2. The method of claim 1 , wherein the first chemical liquid is a silane coupling agent.

3. The method of claim 1 , wherein the method is performed by a semiconductor processing apparatus comprising:
a cleaning-liquid supply part supplying a cleaning liquid cleaning a semiconductor substrate to a surface of the semiconductor substrate; and
a chemical-liquid supply part supplying a first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid on the surface of the semiconductor substrate without mixing with the first chemical liquid, wherein
the chemical-liquid supply part has a double piping structure comprising a first pipe supplying the first chemical liquid and a second pipe supplying the second chemical liquid, wherein the second pipe is provided to surround an outer circumference of the first pipe.

4. The method of claim 1 , wherein the method is performed by a semiconductor processing apparatus comprising:
a cleaning-liquid supply part supplying a cleaning liquid cleaning a semiconductor substrate to a surface of the semiconductor substrate; and
a chemical-liquid supply part supplying a first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid on the surface of the semiconductor substrate, wherein
the chemical-liquid supply part has a double piping structure comprising a first pipe supplying the first chemical liquid and a second pipe supplying the second chemical liquid.

5. The method of claim 1 , further comprising rotating the substrate while supplying a first chemical liquid for forming a water-repellent protection film on a surface of the semiconductor substrate and a second chemical liquid for coating the first chemical liquid.

6. The method of claim 5 , wherein supplying a first chemical liquid for forming a water-repellent protection film and the second chemical liquid for coating the first chemical liquid near the rotation center of the semiconductor substrate.

7. The method of claim 1 , wherein supplying the second chemical liquid for coating the first chemical liquid is performed right after the supplying a first chemical liquid for forming a water-repellent protection film.

8. A surface treatment method of a semiconductor substrate comprising: cleaning a semiconductor substrate; rinsing the surface of the semiconductor substrate with deionized water; displacing the deionized water with alcohol; supplying a first chemical liquid for forming a water-repellent protection film on a surface of the semiconductor substrate and a second chemical liquid for coating the first chemical liquid coating the surface of the semiconductor substrate, the second chemical liquid not being mixed with the first chemical liquid and not reacting to the first chemical liquid, the first chemical liquid being below the second chemical liquid, and the second chemical liquid preventing the first chemical liquid from contacting with water in an atmosphere around the semiconductor substrate; and displacing the first chemical liquid and the second chemical liquid with alcohol; rinsing the alcohol with deionized water; and drying the semiconductor substrate rinsed with the deionized water, wherein the first chemical liquid is a water-soluble water-repellent agent, and the second chemical liquid is a water-insoluble chemical liquid, a specific gravity of the second chemical liquid is lower than a specific gravity of the first chemical liquid.

9. The method of claim 8 , wherein the method is performed by a semiconductor processing apparatus comprising:
a cleaning-liquid supply part supplying a cleaning liquid cleaning a semiconductor substrate to a surface of the semiconductor substrate; and
a chemical-liquid supply part supplying a first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid on the surface of the semiconductor substrate without mixing with the first chemical liquid, wherein
the chemical-liquid supply part has a double piping structure comprising a first pipe supplying the first chemical liquid and a second pipe supplying the second chemical liquid, wherein the second pipe is provided to surround an outer circumference of the first pipe.

10. The method of claim 8 , wherein the method is performed by a semiconductor processing apparatus comprising:
a cleaning-liquid supply part supplying a cleaning liquid cleaning a semiconductor substrate to a surface of the semiconductor substrate; and
a chemical-liquid supply part supplying a first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid on the surface of the semiconductor substrate, wherein
the chemical-liquid supply part has a double piping structure comprising a first pipe supplying the first chemical liquid and a second pipe supplying the second chemical liquid.

11. The method of claim 8 , further comprising rotating the substrate while supplying a first chemical liquid for forming a water-repellent protection film on a surface of the semiconductor substrate and a second chemical liquid for coating the first chemical liquid.

12. The method of claim 8 , wherein supplying a first chemical liquid for forming a water-repellent protection film and the second chemical liquid for coating the first chemical liquid near the rotation center of the semiconductor substrate.

13. The method of claim 8 , wherein supplying the second chemical liquid for coating the first chemical liquid is performed right after the supplying a first chemical liquid for forming a water-repellent protection film.

14. A surface treatment method of a semiconductor substrate comprising:
cleaning a semiconductor substrate;
immersing the semiconductor substrate into deionized water bath and isopropyl alcohol bath;
immersing the semiconductor substrate through a second chemical liquid into a first chemical liquid in a chemical-liquid bath, the first chemical liquid being coated with the second chemical liquid in the chemical-liquid bath, the second chemical liquid not being mixed with the first chemical liquid and not reacting to the first chemical liquid, and the first chemical liquid being below the second chemical liquid;
immersing the semiconductor substrate into isopropyl

Assignees

• Toshiba Memory Corp

Inventors

• Kimura Shinsuke
• Ogawa Yoshihiro

Classifications

• H10P72/0448

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• H10P72/0416

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• H10P72/0414 Primary

  using mainly spraying means, e.g. nozzles · CPC title