Remote plasma and electron beam generation system for a plasma reactor

Patent metadata

Field	Value
Publication number	US-10032604-B2
Application number	US-201514968121-A
Country	US
Kind code	B2
Filing date	Dec 14, 2015
Priority date	Sep 25, 2015
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

Embodiments of an apparatus having an improved coil antenna assembly with a remote plasma source and an electron beam generation system that can provide enhanced plasma in a processing chamber. In one embodiment, a plasma processing chamber includes a chamber body, a lid enclosing an interior volume of the chamber body, a substrate support disposed in the interior volume, a dual inductively coupled source including a coil antenna assembly coupled to the chamber body through the lid, and a remote plasma source coupled to the chamber body through the lid.

First claim

What is claimed is:

1. A plasma processing chamber comprising:
a chamber body;
a lid enclosing an interior volume of the chamber body;
a substrate support disposed in the interior volume;
a dual inductively coupled source including a coil antenna assembly coupled to the chamber body through the lid, wherein the coil antenna assembly includes an outer coil concentric with an inner coil;
a remote plasma source coupled to the chamber body through the lid;
a confinement ring circumscribing a periphery region of the substrate support; and
a filter plate disposed below the confinement ring having a spaced apart relationship to the confinement ring and circumscribing the periphery region of the substrate support.

2. The chamber of claim 1 , further comprising:
a dual bias power source coupled to the substrate support.

3. The chamber of claim 2 , wherein the dual bias power source comprises capacitively coupled plasma source.

4. The chamber of claim 1 , further comprising:
a shape bias source coupled to the substrate support.

5. The chamber of claim 1 , further comprising:
an electron beam generation system disposed in the interior volume of the chamber body.

6. The chamber of claim 5 , wherein the electron beam further comprises:
an electron beam generation source; and
an electron beam collector positioned opposite to and facing the electron beam generation source in the interior volume.

7. The chamber of claim 6 , further comprising:
an electron collector voltage source coupled to the electron beam collector.

8. The chamber of claim 6 , further comprising:
a beam voltage supply coupled to the electron beam generation source.

9. The chamber of claim 1 , wherein the filter plate is fabricated by quartz.

10. The chamber of claim 1 , further comprising:
a liner formed on an interior wall of the chamber body.

11. The chamber of claim 1 , further comprising:
a baffle plate disposed under the lid coupled to the remote plasma source through a RF feedthrough.

12. The chamber of claim 11 , wherein the baffle plate has a surface in parallel to an upper surface of the substrate support.

13. A plasma processing chamber comprising:
a chamber body;
a lid enclosing an interior volume of the chamber body;
a substrate support disposed in the interior volume;
a dual inductively coupled source including a coil antenna assembly coupled to the chamber body through the lid; and
an electron beam generation system disposed in the interior volume of the chamber body adjacent to an inner wall in the chamber body, wherein the electron beam generation system further comprises:
an electron beam generation source;
an electron beam collector positioned opposite to and facing the electron beam generation source in the interior volume;
a confinement ring circumscribing a periphery region of the substrate support; and
a filter plate disposed below the confinement ring having a spaced apart relationship to the confinement ring and circumscribing the periphery region of the substrate support.

14. The chamber of claim 13 further comprising:
a remote plasma source coupled to the chamber body through the lid.

15. The chamber of claim 13 further comprising:
a dual bias power source coupled to the substrate support.

16. The chamber of claim 13 further comprising:
a liner lining on the inner wall of the chamber body; and
a confinement ring circumscribing a periphery region of the substrate support.

17. The chamber of claim 14 further comprising:
a baffle plate disposed under the lid coupled to the remote plasma source through a RF feedthrough.

18. A plasma processing chamber comprising:
a chamber body;
a lid enclosing an interior volume of the chamber body;
a substrate support disposed in the interior volume;
a dual inductively coupled source including a coil antenna assembly coupled to the chamber body through the lid;
a remote plasma source coupled to the chamber body through the lid;
a confinement ring circumscribing a periphery region of the substrate support; and
a filter plate disposed below the confinement ring having a spaced apart relationship to the confinement ring and circumscribing the periphery region of the substrate support.

Assignees

• Applied Materials Inc

Inventors

• Dhindsa Rajinder

Classifications

• H10P72/0468

  comprising a chamber adapted to a particular process · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P72/0421

  for drying etching · CPC title

• H01J37/321 Primary

  the radio frequency energy being inductively coupled to the plasma · CPC title

• C23C14/22

  characterised by the process of coating · CPC title