One-time and multi-time programming using a correlated electron switch

Patent metadata

Field	Value
Publication number	US-10032487-B2
Application number	US-201615086767-A
Country	US
Kind code	B2
Filing date	Mar 31, 2016
Priority date	Mar 31, 2016
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

An apparatus including a Correlated Electron Switch (CES) element and a programing circuit is provided. The programing circuit provides a programing signal to the CES element to program the CES element to an impedance state of multiple impedance states when a number of times the CES element has been programed is less than a threshold.

First claim

The invention claimed is:

1. An apparatus comprising:
a Correlated Electron Switch (CES) element comprising correlated electron material (CEM), the CEM comprising sufficient transition metal oxide to enable switching between or among two or more impedance states based, at least in part, on a concentration of electron holes in the CEM; and
a programming circuit configured to:
determine a pre-defined threshold number of times that the CES element is permitted to be programmed; and
provide a programming signal to the CES element responsive to a determination of a count of a number of times that the CES element has been programmed is less than the pre-defined threshold number of times, the programming signal to program the CES element to one of the two or more impedance states.

2. The apparatus of claim 1 , wherein the pre-defined threshold number of times is an integer greater than or equal to two.

3. The apparatus of claim 1 , wherein the programming circuit is configured to program the CES element to one of the two or more impedance states by disabling programming of the CES element when the number of times that the CES element has been programmed equals the pre-defined threshold number of times minus one.

4. The apparatus of claim 1 , wherein the two or more impedance states comprise at least a high impedance state and a low impedance state.

5. The apparatus of claim 1 , further comprising a counter configured to store the count of the number of times that the CES element has been programmed, wherein the programming circuit is configured to increment the count in response to the CES element being programmed.

6. The apparatus of claim 5 , wherein the counter comprises at least one additional CES element.

7. The apparatus of claim 1 , further comprising a control circuit configured to disable the programming circuit from programming the CES element when the number of times that the CES element has been programmed is equal to the pre-defined threshold number of times that the CES element is permitted to be programmed.

8. The apparatus of claim 1 , further comprising a read circuit to read an impedance state of the two or more impedance states.

9. The apparatus of claim 8 , wherein the read circuit comprises a clamping circuit.

10. The apparatus of claim 1 , wherein the pre-defined threshold number of times corresponds to a maximum number of times that the CES element is permitted to be programmed.

11. A method comprising:
determining a pre-defined threshold programming number of times that a Correlated Electron Switch (CES) element is permitted to be programmed, the CES element comprising correlated electron material (CEM), the CEM comprising sufficient transition metal oxide to enable switching between or among two or more impedance states based, at least in part, on a concentration of electron holes in the CEM;
retrieving a count indicative of a number of times that the CES element has been programmed;
determining if the count is less than the pre-defined threshold programming number of times that the CES element is permitted to be programmed; and
providing a programming signal to the CES element, responsive to determining that the count is less than the pre-defined threshold number of times, to program the CES element to one of the two or more impedance states.

12. The method of claim 11 , wherein the pre-defined threshold number of times is an integer number of times greater than or equal to two.

13. The method of claim 11 , further comprising:
determining when the count is equal to the pre-defined threshold number of times minus one; and
programming the CES element to an impedance state of the two or more impedance states, when the count is determined to be equal to the pre-defined threshold number of times minus one, by disabling programming the CES element.

14. The method of claim 11 , further comprising incrementing the count in response to the CES element being programmed.

15. The method of claim 11 , further comprising disabling programming of the CES element when the count is determined to equal the pre-defined threshold number of times.

16. An apparatus comprising:
a plurality of Correlated Electron Switch (CES) elements, wherein each CES element comprises correlated electron material (CEM), the CEM comprising sufficient transition metal oxide to enable switching between or among two or more impedance states based, at least in part, on a concentration of electron holes in the CEM; and
a plurality of connection pads, each connection pad being coupled to at least one CES element of the plurality of CES elements and configured to receive a programming signal for the at least one CES element to program the at least one CES element to a desired impedance state based, at least in part, on a determination that a count of a number of times that the at least one CES element has been programmed is less than a pre-defined threshold number of times, the pre-defined threshold number of times that the CES element is permitted to be programmed being at least two.

17. The apparatus of claim 16 , wherein the programming signal is to program the at least one CES element to the desired impedance state of the two or more impedance states by disabling programming the at least one CES element when the number of times that the at least one CES element has been programmed is equal to the pre-defined threshold number of times minus one.

18. The apparatus of claim 16 , wherein the plurality of connection pads are disabled to provide the programming signal when the number of times that the CES element has been programmed is equal to the pre-defined threshold number of times.

19. The apparatus of claim 16 , wherein a first impedance state, of the two or more impedance states, is a low impedance state.

20. The apparatus of claim 16 , wherein the apparatus is configured as an integrated circuit.

21. The apparatus of claim 16 , wherein the plurality of CES elements are arranged in an array.

Assignees

• Advanced Risc Mach Ltd

Inventors

• Shifren Lucian
• Aitken Robert Campbell
• Chandra Vikas
• Sandhu Bal S

Classifications

• G11C7/00 Primary

  Arrangements for writing information into, or reading information out from, a digital store (G11C5/00 takes precedence; auxiliary circuits for stores using semiconductor devices G11C11/4063, G11C11/413) · CPC title

• G11C2013/0078

  Write using current through the cell · CPC title

• G11C17/16

  using electrically-fusible links · CPC title

• G11C17/08

  using semiconductor devices, e.g. bipolar elements (G11C17/06, G11C17/14 take precedence) · CPC title

• G11C17/18

  Auxiliary circuits, e.g. for writing into memory · CPC title