Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device

Patent metadata

Field	Value
Publication number	US-10031419-B2
Application number	US-201514921524-A
Country	US
Kind code	B2
Filing date	Oct 23, 2015
Priority date	Apr 26, 2013
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

There is provided a pattern forming method comprising (i) forming a film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a resin which decomposes due to an action of an acid to change its solubility with respect to a developer and (C) a specific resin, (ii) forming a top coat layer using a top coat composition which contains a resin (T) on the film, (iii) exposing the film which has the top coat layer to actinic rays or radiation, and (iv) forming a pattern by developing the film which has the top coat layer after the exposing.

First claim

What is claimed is:

1. A pattern forming method comprising:
(i) forming a film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a resin which decomposes due to an action of an acid to change its solubility with respect to a developer, (B) a compound which generates an acid by actinic rays or radiation, and (C) a resin which has one or more groups selected from the group consisting of a fluorine atom, a group which has a fluorine atom, a group which has a silicon atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an aromatic ring group which is substituted with at least one alkyl group, and an aromatic ring group which is substituted with at least one cycloalkyl group;
(ii) forming a top coat layer using a top coat composition which contains a resin (T) on the film;
(iii) exposing the film which has the top coat layer to actinic rays or radiation; and
(iv) forming a pattern by developing the film which has the top coat layer after the exposing,
wherein the resin (A) has a repeating unit which is represented by General Formula (1) below and a repeating unit which is represented by General Formula (3) or (4) below:

in General Formula (1),
R 11 , R 12 , and R 13 each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group, or an alkoxycarbonyl group,
R 13 may form a ring by bonding with Ar 1 and R 13 in this case represents an alkylene group,
X 1 represents a single bond or a divalent linking group,
Ar 1 represents an (n+1) valent aromatic ring group and represents an (n+2) valent aromatic ring group when forming a ring by bonding with R 13 , and
n represents an integer of 1 to 4;

in General Formula (3),
Ar 3 represents an aromatic ring group,
R 3 represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an acyl group, or a hetero ring group,
M 3 represents a single bond or a divalent linking group,
Q 3 represents an alkyl group, a cycloalkyl group, an aryl group, or a hetero ring group, and
at least two of Q 3 , M 3 , and R 3 may form a ring by bonding with each other;

in General Formula (4),
R 41 , R 42 , and R 43 each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group, or an alkoxycarbonyl group, R 42 may form a ring by bonding with L 4 and R 42 in this case represents an alkylene group,
L 4 represents a single bond or a divalent linking group and represents a trivalent linking group when forming a ring with R 42 ,
R 44 represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an acyl group, or a hetero ring group,
M 4 represents a single bond or a divalent linking group,
Q 4 represents an alkyl group, a cycloalkyl group, an aryl group, or a hetero ring group, and
at least two of Q 4 , M 4 , and R 44 may form a ring by bonding with each other.

2. The pattern forming method according to claim 1 ,
wherein the resin (C) contains a repeating unit which has at least two or more groups which are represented by —COO— in a structure which is represented by General Formula (KA-1) or (KB-1) below, or at least one type of a repeating unit which is derived from a monomer which is represented by General Formula (aa1-1) below:

in General Formula (KA-1),
Z ka represents an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group, an amide group, an aryl group, a lactone ring group, or an electron-withdrawing group,
when a plurality of Z ka s are present, the plurality of Z ka s are the same or are different and Z ka s may form a ring by linking with each other,
nka represents an integer of 0 to 10,
Q represents an atomic group which is necessary for forming a lactone ring with atoms in the formula; and
in General Formula (KB-1),
X kb1 and X kb2 each independently represents an electron-withdrawing group,
nkb and nkb′ each independently represents 0 or 1,
R kb1 , R kb2 , R kb3 , and R kb4 each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or an electron-withdrawing group, at least two of R kb1 , R kb2 , and X kb1 may form a ring by linking with each other, and at least two of R kb3 , R kb4 , and X kb2 may form a ring by linking with each other:

in General Formula (aa1-1) above,
Q 1 represents an organic group which includes a polymeric group,
L 1 and L 2 each independently represents a single bond or a divalent linking group, and
Rf represents an organic group which has a fluorine atom.

3. The pattern forming method according to claim 2 ,
wherein the resin (C) contains a repeating unit which has at least two or more groups which are represented by —COO— in the structure which is represented by General Formula (KA-1) or (KB-1).

4. The pattern forming method according to claim 1 ,
wherein the resin (C) further has a repeating unit which has a group which changes its solubility with respect to a developer due to an effect of an acid.

5. The pattern forming method according to claim 4 ,
wherein the repeating unit which has a group which changes its solubility with respect to a developer due to an effect of an acid is a repeating unit which is represented by any of General Formulas (Ca1) to (Ca4) below:

in General Formula (Ca1),
R′ represents a hydrogen atom or an alkyl group,
L represents a single bond or a divalent linking group,
R 1 represents a hydrogen atom or a monovalent substituent group,
R 2 represents a monovalent substituent group, R 1 and R 2 may bond with each other and form a ring with an oxygen atom in the formula, and
R 3 represents a hydrogen atom, an alkyl group, or a cycloalkyl group;
in General Formula (Ca2),
Ra represents a hydrogen atom, an alkyl group, a cyano group, or a halogen atom,
L 1 represents a single bond or a divalent linking group,
R 4 and R 5 each independently represents an alkyl group,
R 11 and R 12 each independently represents an alkyl group and R 13 represents a hydrogen atom or an alkyl group, R 11 and R 12 may form a ring by linking with each other, and R 11 and R 13 may form a ring by linking with each other;
in General Formula (Ca3),
Ra represents a hydrogen atom, an alkyl group, a cyano group, or a halogen atom,
L 2 represents a single bond or a divalent linking group,
R 14 , R 15 , and R 16 each independently represents an alkyl group, two of R 14 to R 16 may form a ring by linking with each other; and
in General Formula (Ca4),
Ra represents a hydrogen atom, an alkyl group, a cyano group, or a halogen atom,
L 3 represents a single bond or a divalent linking group,
AR represents an aryl group, Rn represents an alkyl group, a cycloalkyl g

Assignees

• Fujifilm Corp

Inventors

• Takizawa Hiroo
• Hirano Shuji

Classifications

• G03F7/0395

  the macromolecular compound having a backbone with alicyclic moieties · CPC title

• G03F7/0045

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• C08F220/283

  and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate · CPC title

• G03F7/0392

  the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title

• G03F7/0046

  with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title