Device for controlling the phase of an optical wavefront
US-2015301333-A1 · Oct 22, 2015 · US
US10031267B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10031267-B2 |
| Application number | US-201715427127-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 8, 2017 |
| Priority date | Jul 8, 2013 |
| Publication date | Jul 24, 2018 |
| Grant date | Jul 24, 2018 |
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An optical element is disclosed. The optical element comprises: a first phase shift mask formed on a first optical material and constituted to generate a positive phase shift, and a second phase shift mask formed on a second optical material and constituted to generate a negative phase shift, wherein the phase shift masks are arranged serially on an optical axis, and wherein a refractive index of at least one of the first and second optical materials varies with the temperature at a rate of at least 50×10−6 per degree Kelvin.
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What is claimed is: 1. An optical element, comprising: a first phase shift mask formed on a first optical material and constituted to generate a positive phase shift, and a second phase shift mask formed on a second optical material and constituted to generate a negative phase shift, wherein said first mask forms an etched pattern of depth h 1 in said first optical material, and said second mask forms a relief pattern of height h 2 on said second optical material, and wherein a difference between a refractive index characterizing said first optical material and a refractive index characterizing said second optical material is at least 0.1. 2. The optical element according to claim 1 , wherein said phase shift masks are selected such that an infrared light beam passing through the optical element experiences mean square variations from a predetermined phase shift of no more than 5% over a wavelength range spanning over at least 0.2 micrometer. 3. The optical element according to claim 1 , wherein said phase shift masks are selected such that an infrared light beam passing through the optical element experiences mean square variations from the phase shift of no more than 5% over a temperature range of from about −10° C. to about +50° C. 4. The optical element according to claim 1 , wherein said phase shift masks are selected such that an infrared light beam passing through the optical element experiences a phase shift that is increased as a function of the temperature. 5. The optical element according to claim 4 , wherein said function of the temperature is a linear function or a function having a deviation from linearity of less than 10% over a temperature range selected from the group consisting of: from about −20° C. to about +60° C.; from about −15° C. to about +60° C.; from about −20° C. to about +55° C.; from about −15° C. to about +55° C.; from about −10° C. to about +55° C.; from about −15° C. to about +50° C.; and from about −10° C. to about +50° C. 6. The optical element according to claim 1 , wherein one of said first and second optical materials comprises germanium. 7. The optical element according to claim 1 , wherein said first material comprises germanium, and said second material comprises zinc sulfide. 8. The optical element according to claim 1 , wherein said first material comprises germanium, and said second material comprises zinc selenide. 9. The optical element according to claim 1 , wherein said first material comprises germanium, and said second material comprises silicon. 10. The optical element according to claim 1 , wherein said first material comprises Zinc Selenide, and said second material comprises silicon. 11. The optical element according to claim 1 , wherein said first optical material is characterized by a first refractive index having a first dependence n 1 (λ) on a wavelength λ of light passing therethrough, and said second optical material is characterized by a second refractive index having a second dependence n 2 (λ) on a wavelength λ of light passing therethrough, and wherein said optical materials, said depth h 1 and said height h 2 are selected such that the expression n 1 (λ)+(h 2 /h 1 )[n 2 (λ)−1] is approximately linear with the wavelength. 12. The optical element according to claim 1 , wherein a difference between an Abbe number characterizing said first optical material and an Abbe number characterizing said second optical material is at least 25. 13. The optical element according to claim 1 , wherein at least part of a wavelength range of light passing through the optical element is in the near infrared range. 14. The optical element according to claim 1 , wherein at least part of said wavelength range of light passing through the optical element is in the mid infrared range. 15. The optical element according to claim 1 , wherein at least part of said wavelength range of light passing through the optical element is in the far infrared range. 16. An infrared imaging system comprising an infrared camera and the optical element of claim 1 positioned at or near a pupil of said infrared camera. 17. A method of imaging a scene, comprising: receiving infrared light from the scene, passing said infrared light through an optical element to generate a phase shift in said infrared light, and capturing an infrared image constituted by said phase shifted infrared light, wherein said optical element comprises the optical element of claim 1 . 18. A method of imaging a scene by infrared light, comprising, at different times, receiving infrared light beams from the scene, passing each infrared light beam through an optical element to generate in said infrared light beam a phase shift that increases with a temperature of said element, and capturing an image constituted by each said phase shifted light beam, wherein said optical element comprises: a first phase shift mask formed on a first optical material and constituted to generate a positive phase shift, and a second phase shift mask formed on a second optical material and constituted to generate a negative phase shift, wherein said first mask forms an etched pattern of depth h 1 in said first optical material, and said second mask forms a relief pattern of height h 2 on said second optical material, and wherein said phase shift masks are arranged serially on an optical axis. 19. A method of manufacturing an optical element, comprising: forming on a first optical material a first phase shift mask selected to generate a positive phase shift; forming on a second optical material a second phase shift mask selected to generate a negative phase shift; and positioning said phase shift masks serially on an optical axis; wherein said first mask forms an etched pattern of depth h 1 in said first optical material, and said second mask forms a relief pattern of height h 2 on said second optical material, and wherein a difference between a refractive index characterizing said first optical material and a refractive index characterizing said second optical material is at least 0.1.
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