Composite substrate, method for fabricating same, function element, and seed crystal substrate

Patent metadata

Field	Value
Publication number	US-10030318-B2
Application number	US-201514969809-A
Country	US
Kind code	B2
Filing date	Dec 15, 2015
Priority date	Jul 22, 2013
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

A composite substrate includes a polycrystalline ceramic substrate, a silicon substrate directly bonded to the polycrystalline ceramic substrate, a seed crystal film formed on the silicon substrate by vapor phase process and made of a nitride of a group 13 element, and a gallium nitride crystal layer grown on the seed crystal film by flux method.

First claim

The invention claimed is:

1. A method of manufacturing a functional element, said method comprising the steps of:
thinning a silicon body of a composite body to provide a silicon film having a thickness of greater than 0.2 μm but not more than 8.0 μm, said composite body comprising a polycrystalline ceramic substrate and said silicon substrate directly bonded with each other;
chamfering an outer peripheral surface of said composite body by a beveling process, a surface of said silicon film being positioned inside of said outer peripheral surface of said polycrystalline ceramic body after said beveling process;
depositing a seed crystal film comprising a nitride of a group 13 element on said silicon film by a gas-phase method to cover said silicon film by said seed crystal film;
growing a gallium nitride crystal layer on said seed crystal film by a flux method in a in a melt in a crucible, said melt comprising a gallium raw material and at least one element selected from the group consisting of an alkali metal and an alkaline earth metal, while said seed crystal film preventing contact of said silicon film and said melt and thereby preventing dissolution of silicon from a side surface of said silicon film into said melt;
removing said composite substrate from said crucible, said composite substrate comprising said polycrystalline ceramic substrate, said silicon film, said seed crystal substrate, and said gallium nitride crystal layer; and
forming a functional layer comprising a nitride of a group 13 element on said gallium nitride crystal layer by a gas-phase method to provide said functional element comprising said polycrystalline ceramic substrate, said silicon film, said seed crystal substrate, said gallium nitride crystal layer and said functional layer.

2. The method of claim 1 , wherein said functional layer has a function of emitting light.

3. The method of claim 1 , wherein said nitride of said group 13 element comprises gallium nitride.

4. The method of claim 1 , wherein said polycrystalline ceramic substrate comprises alumina or aluminum nitride.

5. The method of claim 1 , wherein said silicon film has a thickness of 0.5 μm or larger but not more than 8.0 μm.

Assignees

• Ngk Insulators Ltd

Inventors

• Kuraoka Yoshitaka
• Iwasaki Yasunori
• Yoshino Takashi

Classifications

• H10P14/20

  of semiconductor materials · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3258

  Crystal orientation · CPC title

• H10P14/3248

  consisting of two layers · CPC title

• H10P14/3216

  Nitrides · CPC title