Methods and compositions for processing dielectric substrate

Patent metadata

Field	Value
Publication number	US-10029345-B2
Application number	US-201615207973-A
Country	US
Kind code	B2
Filing date	Jul 12, 2016
Priority date	Jul 13, 2015
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka “slurry”) and an abrasive pad, e.g., CMP processing.

First claim

The invention claimed is:

1. A method of polishing a dielectric-containing surface of a substrate, the method comprising:
providing a substrate comprising a surface that includes a pattern dielectric material comprising raised areas of the dielectric material and trench areas of the dielectric material, a difference between a height of the raised areas and a height of the trench areas being step height, wherein an initial step height of the substrate is at least 1000 angstroms,
providing a polishing pad,
providing a chemical-mechanical polishing composition comprising:
an aqueous medium,
abrasive particles dispersed in the aqueous medium, and
hydroxamic acid or substituted hydroxamic acid of the formula:

wherein R is selected from the group consisting of: hydrogen, alkyl, cycloalkyl, aryl, heterocyclic alkyl, and heterocyclic aryl, any of which may be substituted,
the slurry having a pH of below about 7,
contacting the substrate with the polishing pad and the chemical-mechanical polishing composition; and
moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the silicon oxide layer on a surface of the substrate to polish the substrate, wherein a planarization efficiency for the polished substrate is at least 2.0.

2. The method of claim 1 wherein R is 2-hydroxyphenyl, a C 1 to C 5 branched or straight chain alkyl-substituted phenyl, or a C 1 to C 5 branched or straight chain alkyl (e.g., saturated) group.

3. The method of claim 1 wherein the hydroxamic acid or substituted hydroxamic acid is salicylhydroxamic acid:

4. The method of claim 1 wherein the hydroxamic acid or substituted hydroxamic acid is present in the polishing composition at a concentration of about 5 to about 3,000 parts per million.

5. The method of claim 1 wherein the pattern dielectric consists of dielectric material selected from silicon oxide, tetraethoxysilane, phosphosilicate glass, or borophosphosilicate glass.

Assignees

• Cabot Microelectronics Corp

Inventors

• Lam Viet
• Cui Ji

Classifications

• C09G1/02

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• B24B37/044 Primary

  characterised by the composition of the lapping agent · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• B24B57/02

  for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents · CPC title

• H10P52/00 Primary

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title