Magnetoresistive element

Patent metadata

Field	Value
Publication number	US-10026891-B2
Application number	US-201615198543-A
Country	US
Kind code	B2
Filing date	Jun 30, 2016
Priority date	Mar 22, 2013
Publication date	Jul 17, 2018
Grant date	Jul 17, 2018

Abstract

A magnetoresistive element including a first magnetic layer; a first nonmagnetic layer provided on the first magnetic layer, the first nonmagnetic layer formed of SrTiO 3 , SrFeO 3 , LaAlO 3 , NdCoO 3 , or BN; and a second magnetic layer provided on the first nonmagnetic layer, wherein the first nonmagnetic layer is lattice-matched to the first magnetic layer, and the second magnetic layer is lattice-matched to the first nonmagnetic layer.

First claim

What is claimed is:

1. A magnetoresistive element having a plurality of layers including a top layer and a bottom layer, said magnetoresistive element comprising:
a shift cancelling layer as said top layer;
a second magnetic layer;
a first nonmagnetic layer provided between a first magnetic layer and the second magnetic layer, the first nonmagnetic layer formed of a material selected from the group consisting of SrTiO 3 , SrFeO 3 , LaAlO 3 , NdCoO 3 and BN;
an underlying layer; and
a buffer layer as said bottom layer, wherein the underlying layer is provided on the buffer layer;
wherein from top to bottom, said plurality of layers are stacked in the following order: the shift cancelling layer, the second magnetic layer, the first nonmagnetic layer, the first magnetic layer, the underlying layer and the buffer layer,
wherein the first nonmagnetic layer is lattice-matched to the first magnetic layer, and the second magnetic layer is lattice-matched to the first nonmagnetic layer, and
wherein the first magnetic layer, the first nonmagnetic layer, the second magnetic layer, and the shift cancelling layer are oriented to a cubical crystal (111) plane or a hexagonal crystal (0002) plane.

2. The magnetoresistive element according to claim 1 , wherein each of the first magnetic layer and the second magnetic layer is formed of a material selected from the group consisting of a monometal of Co, a monometal of Ni, an alloy of Co and Fe, an alloy of Co and Ni, an alloy of Fe and Ni, and an alloy of Co, Fe and Ni, and wherein each of the layers first magnetic layer and the second magnetic layer are oriented to an cubical crystal (111) plane.

3. The magnetoresistive element according to claim 1 , wherein the first magnetic layer, the first nonmagnetic layer and the second magnetic layer are oriented to the cubical crystal (111) plane.

4. The magnetoresistive element according to claim 1 , wherein BN has a ZnS structure.

5. The magnetoresistive element according to claim 1 , wherein the buffer layer includes Ta.

6. The magnetoresistive element according to claim 1 , further comprising a second nonmagnetic layer which is provided on the second magnetic layer.

7. The magnetoresistive element according to claim 6 , wherein the second nonmagnetic layer is a Ru layer.

8. The magnetoresistive element according to claim 7 , wherein the shift cancelling layer has a thickness of 10 nm or less.

9. The magnetoresistive element according to claim 1 , wherein the first magnetic layer has a variable magnetization direction, and the second magnetic layer has a fixed magnetization direction.

10. The magnetoresistive element according to claim 1 , wherein the first magnetic layer is a recording layer and is oriented to a (111) plane of a face-centered cubic structure.

11. The magnetoresistive element according to claim 1 , wherein the first nonmagnetic layer is a tunnel barrier layer and is oriented to a (111) plane of a face-centered cubic structure.

12. The magnetoresistive element according to claim 1 , wherein the second magnetic layer is a reference layer and is oriented to a (111) plane of a face-centered cubic structure.

13. The magnetoresistive element according to claim 1 , wherein the shift cancelling layer is lattice-matched to the second magnetic layer.

14. The magnetoresistive element according to claim 1 , wherein the first magnetic layer is oriented to the hexagonal crystal (0002) plane.

15. The magnetoresistive element according to claim 1 , wherein the first nonmagnetic layer is oriented to the hexagonal crystal (0002) plane.

16. The magnetoresistive element according to claim 1 , wherein the second magnetic layer is oriented to the hexagonal crystal (0002) plane.

17. The magnetoresistive element according to claim 1 , wherein the shift cancelling layer is oriented to the hexagonal crystal (0002) plane.

Assignees

• Toshiba Memory Corp

Inventors

• Nagase Toshihiko
• Kai Tadashi
• Eeh Youngmin
• Ueda Koji
• Watanabe Daisuke
• Sawada Kazuya
• Yoda Hiroaki

Classifications

• H01L43/08 Primary

  Electricity · mapped topic

• H01L43/02

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic

• H01L43/12

  Electricity · mapped topic

• H10N50/85

  Materials of the active region · CPC title