Organic EL element and method for manufacturing organic EL element

Patent metadata

Field	Value
Publication number	US-10026795-B2
Application number	US-201515312183-A
Country	US
Kind code	B2
Filing date	May 20, 2015
Priority date	May 21, 2014
Publication date	Jul 17, 2018
Grant date	Jul 17, 2018

Abstract

An organic EL element including: a TFT substrate having a TAOS-TFT; and an organic EL unit having a lower electrode. The lower electrode includes an aluminum containing metal layer, a transition metal containing oxide layer disposed between the aluminum containing metal layer and the TFT substrate, and an aluminum containing oxide layer disposed between the aluminum containing metal layer and the transition metal containing oxide layer and in contact with both the aluminum containing metal layer and the transition metal containing oxide layer. The aluminum containing oxide layer contains aluminum oxide. The transition metal containing oxide layer contains tungsten oxide and has a density of 6.5 g/cm3 or more.

First claim

The invention claimed is:

1. An organic electroluminescence (EL) element comprising:
a substrate including a thin film transistor (TFT); and
an organic EL unit including a light-emitting layer having a bottom surface and an electrode electrically connected to the TFT, wherein
the TFT has a channel layer made of a transparent amorphous oxide semiconductor (TAOS),
the electrode is a stack of a plurality of layers disposed on the substrate,
the plurality of layers include:
a metal layer made of aluminum or an alloy containing aluminum;
a first oxide layer closer to the substrate than the metal layer; and
a second oxide layer disposed between the metal layer and the first oxide layer and in contact with both the metal layer and the first oxide layer,

the second oxide layer contains an oxide of aluminum,
the first oxide layer contains an oxide of a transition metal, and

wherein
the metal layer is in direct contact with the bottom surface of the light-emitting layer.

2. The organic EL element of claim 1 , wherein
the transition metal is tungsten, and
a density of the first oxide layer is 6.5 g/cm 3 or more.

Assignees

• Joled Inc

Inventors

• Abe Yuuki
• Yokota Kazuhiro
• Shinokawa Yasuharu
• Sugano Kou
• Takeda Eiji

Classifications

• H01L2227/323

  Electricity · mapped topic

• H01L29/78693

  Electricity · mapped topic

• H01L27/3244

  Electricity · mapped topic

• H01L51/5206

  Electricity · mapped topic

• H01L27/3262 Primary

  Electricity · mapped topic