Apparatus with 3D wirewound inductor integrated within a substrate

Patent metadata

Field	Value
Publication number	US-10026546-B2
Application number	US-201615160776-A
Country	US
Kind code	B2
Filing date	May 20, 2016
Priority date	May 20, 2016
Publication date	Jul 17, 2018
Grant date	Jul 17, 2018

Abstract

An apparatus includes a substrate and a three-dimensional (3D) wirewound inductor integrated within the substrate. The apparatus further includes a capacitor coupled to the 3D wirewound inductor.

First claim

What is claimed is:

1. An apparatus comprising:
a substrate;
a first three-dimensional (3D) wirewound inductor integrated within the substrate and including a first number of coils;
a second 3D wirewound inductor integrated within the substrate and including a second number of coils that is different than the first number of coils; and
a capacitor coupled to the first 3D wirewound inductor.

2. The apparatus of claim 1 , wherein the substrate has a first surface and a second surface that is opposite to the first surface, and wherein the first 3D wirewound inductor includes one or more coils disposed around an axis extending from the first surface to the second surface.

3. The apparatus of claim 1 , wherein the first number is greater than one.

4. The apparatus of claim 1 , further comprising:
a first receiver signal chain that includes the first 3D wirewound inductor; and
a second receiver signal chain that includes the second 3D wirewound inductor.

5. The apparatus of claim 4 , wherein the first receiver signal chain corresponds to a low-band receiver signal chain, and wherein the second receiver signal chain corresponds to a high-band receiver signal chain.

6. The apparatus of claim 4 , wherein the first receiver signal chain corresponds to a cellular receiver signal chain, and wherein the second receiver signal chain corresponds to a WiFi receiver signal chain.

7. The apparatus of claim 4 , wherein at least one of the first receiver signal chain and the second receiver signal chain is associated with a frequency range of approximately 0.5 gigahertz (GHz) to 5.5 GHz.

8. The apparatus of claim 1 , wherein the first 3D wirewound inductor has a surface-mount technology (SMT) configuration.

9. The apparatus of claim 1 , further comprising a two-dimensional (2D) inductor coupled to the first 3D wirewound inductor.

10. The apparatus of claim 1 , wherein the first 3D wirewound inductor has a monolithic configuration.

11. The apparatus of claim 10 , wherein the substrate has a monolithic configuration that is molded about the first 3D wirewound inductor.

12. The apparatus of claim 1 , wherein the first 3D wirewound inductor has a helical configuration.

13. The apparatus of claim 1 , wherein the substrate includes a glass material molded around and in contact with the first 3D wirewound inductor.

14. The apparatus of claim 13 , wherein the glass material includes a solidified molten glass material.

15. An apparatus comprising:
a substrate;
a three-dimensional (3D) wirewound inductor integrated within the substrate;
a capacitor coupled to the 3D wirewound inductor; and
a radio frequency (RF) device that includes the 3D wirewound inductor and the capacitor, wherein the RF device includes at least one of a multiplexer circuit, a diplexer circuit, a triplexer circuit, a filter circuit, a hybrid circuit, or an RF receiver front-end circuit.

16. The apparatus of claim 15 , wherein the capacitor has a planar configuration and is in contact with the 3D wirewound inductor at a surface of the substrate.

17. The apparatus of claim 15 , wherein the RF device includes the filter circuit, and wherein the filter circuit is associated with a frequency range of between 0.5 gigahertz (GHz) and 5.5 GHz.

18. The apparatus of claim 15 , wherein the RF device further includes an oscillator circuit that includes the 3D wirewound inductor and the capacitor.

19. The apparatus of claim 15 , wherein the 3D wirewound inductor has a helical configuration.

20. The apparatus of claim 15 , further comprising a second inductor.

21. The apparatus of claim 20 , wherein the second inductor has a 3D wirewound configuration.

22. The apparatus of claim 20 , wherein the 3D wirewound inductor has a first number of coils, and wherein the second inductor includes a second number of coils that is different than the first number.

23. The apparatus of claim 20 , wherein the second inductor is integrated within the substrate.

24. An apparatus comprising:
means for conducting a first signal through a first set of one or more wirewound coils to generate a magnetic field, the means for conducting the first signal integrated within a substrate;
means for conducting a second signal through a second set of one or more wirewound coils to generate a second magnetic field, the means for conducting the second signal integrated within the substrate; and
means for storing charge, the means for storing charge coupled to the means for conducting the first signal.

25. The apparatus of claim 24 , wherein a first number of wirewound coils of the first set of one or more wirewound coils is different than a second number of wirewound coils of the second set of one or more wirewound coils.

26. A method of fabrication of a device, the method comprising:
using a molding process, forming a substrate around one or more three-dimensional (3D) wirewound inductors, wherein the molding process includes applying a molten glass material about the one or more 3D wirewound inductors and solidifying the molten glass material; and
thinning one or more sides of the substrate to expose one or more terminals of the one or more 3D wirewound inductors.

27. The method of claim 26 , further comprising performing a metal-insulator-metal (MIM) process to form a capacitor coupled to a particular 3D wirewound inductor of the one or more 3D wirewound inductors.

28. The method of claim 27 , wherein the capacitor is formed above the particular wirewound inductor.

Assignees

• Qualcomm Inc
• Qualcomm Incorported

Inventors

• Yun Changhan Hobie
• Zuo Chengjie
• Kim Daeik Daniel
• Velez Mario Francisco
• Mudakatte Niranjan Sunil
• Kim Jonghae
• Berdy David Francis

Classifications

• H10W70/685

  comprising multiple insulating layers · CPC title

• H10W20/497

  Inductive arrangements or effects of, or between, wiring layers · CPC title

• H10W20/496

  Capacitor integral with wiring layers · CPC title

• H01F27/2823

  Wires (H01F27/2866 takes precedence) · CPC title

• H03H7/0115

  comprising only inductors and capacitors (H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence) · CPC title