Capacitive micro-electro-mechanical force sensor and corresponding force sensing method

Patent metadata

Field	Value
Publication number	US-10024738-B2
Application number	US-201414539640-A
Country	US
Kind code	B2
Filing date	Nov 12, 2014
Priority date	Nov 15, 2013
Publication date	Jul 17, 2018
Grant date	Jul 17, 2018

Abstract

A MEMS force sensor has: a substrate; a fixed electrode coupled to the substrate; and a mobile electrode suspended above the substrate at the fixed electrode to define a sensing capacitor, the mobile electrode being designed to undergo deformation due to application of a force to be detected. A dielectric material region is set on the fixed electrode and spaced apart by an air gap from the mobile electrode, in resting conditions. The mobile electrode comes to bear upon the dielectric material region upon application of a minimum detectable value of the force, so that a contact surface between the mobile electrode and the dielectric material region increases, in particular in a substantially linear way, as the force increases.

First claim

The invention claimed is:

1. A MEMS force sensor comprising:
a substrate;
a fixed electrode coupled to the substrate;
a mobile electrode suspended above the substrate and facing the fixed electrode, the mobile electrode and the fixed electrode defining a sensing capacitor, the mobile electrode including a hole extending from a surface adjacent to the fixed electrode to a surface opposite the surface adjacent to the fixed electrode, the mobile electrode being configured to undergo deformation in response to a force;
a dielectric material located on the fixed electrode and spaced apart from the mobile electrode by an air gap when the mobile electrode is in a rest condition, wherein the hole in the mobile electrode places the air gap in fluid communication with an environment that is external to the MEMS force sensor when the force sensor is in operation,
the mobile electrode including a contact surface that is configured to contact the dielectric material in response to the force, an area of the contact surface contacting the dielectric material increases as the force increases; and
a coating surrounding lateral edges of the mobile electrode, the coating having a surface that is coplanar with the surface of the mobile electrode opposite the surface adjacent to the fixed electrode.

2. The sensor according to claim 1 , wherein the dielectric material has a dielectric constant that is higher than a dielectric constant of air.

3. The sensor according to claim 1 , wherein the dielectric material comprises silicon nitride.

4. The sensor according to claim 1 , wherein the mobile electrode is configured to abut the dielectric material in response to a force of a minimum threshold value.

5. The sensor according to claim 1 , further comprising an anchorage region, wherein the mobile electrode has a membrane conformation and is anchored to the substrate by the anchorage region.

6. The sensor according to claim 5 , wherein the mobile electrode has, in a horizontal plane, an extension defined by a perimeter and is anchored to the substrate by the extension and along the entire perimeter of the mobile electrode.

7. The sensor according to claim 1 , further comprising elastic elements located at edge portions of the mobile electrode, wherein the mobile electrode is anchored to the substrate by the elastic elements.

8. The sensor according to claim 1 , further comprising a package, wherein the mobile electrode defines part of an outer surface of the package and faces an external environment.

9. The sensor according to claim 1 , wherein the fixed electrode and the dielectric material have a convex curved shape, facing the mobile electrode.

10. The sensor according to claim 1 , comprising an integrated circuit configured to generate an electrical signal indicative of the force, the electrical signal being based on a capacitive variation of the sensing capacitor that is a function of the increasing area of the contact surface between the mobile electrode and the dielectric material.

11. An electronic apparatus, comprising:
a microprocessor unit; and
a MEMS force sensor coupled to the microprocessor unit, the MEMS force senor including:
a substrate;
a fixed electrode coupled to the substrate;
a spacer coupled to the substrate, the spacer having a first thickness;
a mobile electrode coupled to the substrate and suspended above the fixed electrode, the mobile electrode being a semiconductor material and including a through hole, the mobile electrode and the fixed electrode defining a sensing capacitor, the mobile electrode having a second thickness, the first thickness less than the second thickness; and
a dielectric material located between the fixed and mobile electrode and a distance from the mobile electrode such that an air gap is between the mobile electrode and the dielectric material, wherein when the MEMS force sensor is in operation, the through hole remains open and in fluid communication with the sir gap and an environment that is external to the MEMS force sensor, wherein when the MEMS force sensor is in operating, the mobile electrode is configured to abut the dielectric material at a contact surface in response to a force being applied to the mobile electrode, wherein an area of the contact surface increases as the force increases.

12. The electronic apparatus according to claim 11 , wherein the dielectric material comprises silicon nitride.

13. The electronic apparatus according to claim 11 , further comprising an integrated circuit electrically coupled to the MEMS force sensor, the integrated circuit being configured to receive, from the MEMS force sensor, a signal indicative of the force being applied to the mobile electrode.

14. The electronic apparatus according to claim 13 , wherein the MEMS force sensor is coupled to a surface of the integrated circuit.

15. The electronic apparatus according to claim 11 , wherein the electronic apparatus is at least one of a tablet, a smartphone, a digital audio player, a photographic camera, a video camera, a wearable device, and a console for videogames.

16. The electronic apparatus according to claim 11 , further comprising:
a coating surrounding edges of the spacer and edges of the mobile electrode, the coating having a thickness at least as great as the first thickness plus the second thickness.

17. The electronic apparatus according to claim 11 , further comprising a coating surrounding lateral edges of the mobile electrode, the coating having a surface that is coplanar with a surface of the mobile electrode opposite a surface adjacent to the fixed electrode.

18. A method for sensing a force using a MEMS force sensor, the method comprising:
through a hole in the mobile electrode, equalizing air between the mobile electrode and the fixed electrode with air external to the MEMS force sensor;
while the hole in the mobile electrode remains open, applying forces to a mobile electrode of semiconductor material that is suspended above a fixed electrode and a dielectric material, the dielectric material being located above the fixed electrode; and
in response to the forces, the mobile electrode deforming and contacting a portion of the dielectric material at a contact surface, wherein when the forces applied increase, the contact surface increases.

19. The method according to claim 18 , wherein the forces are above a minimum detectable value such that the mobile electrode contacts the portion of the dielectric material and determine a non-zero value for the contact surface.

20. The method according to claim 18 , wherein the minimum detectable value is a value that causes the mobile electrode to contact the portion of the dielectric material at the contact surface.

21. The method according to claim 18 , wherein a coating surrounds lateral edges of the mobile electrode, the coating having a surface that is coplanar with a surface of the mobile electrode opposite a surface adjacent to the fixed electrode.

Assignees

• St Microelectronics Srl

Inventors

• Conti Sebastiano
• Prati Daniele
• Giusti Domenico

Classifications

• G01L1/148 Primary

  using semiconductive material, e.g. silicon · CPC title

• G01L1/142 Primary

  using capacitors · CPC title