Methods of fabricating a polycrystalline diamond compact

US10022843B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10022843-B2
Application numberUS-201715442237-A
CountryUS
Kind codeB2
Filing dateFeb 24, 2017
Priority dateNov 21, 2013
Publication dateJul 17, 2018
Grant dateJul 17, 2018

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Embodiments of the invention relate to methods of forming polycrystalline diamond compacts (“PDCs”), wherein the PDC includes a polycrystalline diamond (“PCD”) table in which at least one Group VIII metal is at least partially alloyed with phosphorus and/or at least one other alloying element to improve the thermal stability of the PCD table. The disclosed PDCs may be used in a variety of applications, such as rotary drill bits, machining equipment, and other articles and apparatuses.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method of fabricating a thermally-stable polycrystalline diamond compact, the method comprising: forming a polycrystalline diamond compact including a polycrystalline diamond table adjacent to an interfacial surface of a substrate, the polycrystalline diamond table including an upper surface remote from the interfacial surface of the substrate, at least one lateral surface, and a chamfer extending between the at least one lateral surface and the upper surface, wherein the polycrystalline diamond table includes a plurality of bonded diamond grains defining a plurality of interstitial regions, at least a portion of the plurality of interstitial regions including at least one Group VIII metal disposed therein; subjecting the polycrystalline diamond compact and one or more alloying materials including phosphorous to an inert environment; and while subjected to the inert environment, heating the polycrystalline diamond compact and the one or more alloying materials to an effective temperature and for an effective time to alloy at least some of the at least one Group VIII metal with the phosphorous; wherein, prior to alloying the at least one Group VIII metal with the phosphorous, the one or more alloying materials are positioned external to the polycrystalline diamond compact. 2. The method of claim 1 , wherein the one or more alloying materials are positioned adjacent to at least a portion of the upper surface of the polycrystalline diamond table. 3. The method of claim 1 , wherein subjecting the polycrystalline diamond compact and one or more alloying materials including phosphorous to an inert environment includes subjecting the assembly to a vacuum of less than about 10-2 torr. 4. The method of claim 1 , wherein subjecting the polycrystalline diamond compact and one or more alloying materials including phosphorous to an inert environment includes subjecting the at least the polycrystalline diamond compact to an inert atmosphere. 5. The method of claim 4 , wherein the inert atmosphere includes at least one of argon, helium, nitrogen, or carbon dioxide. 6. The method of claim 1 , wherein the phosphorous of the one or more alloying materials includes phosphorus powder. 7. The method of claim 1 , wherein the phosphorous of the one or more alloying materials includes at least one of white phosphorus, red phosphorus, violet phosphorus, or black phosphorus. 8. The method of claim 1 wherein heating the polycrystalline diamond compact and one or more alloying materials including phosphorous to an effective temperature and for an effective time to alloy at least some of the at least one Group VIII metal with the phosphorous is performed under a diamond-stable high-pressure/high-temperature process. 9. The method of claim 1 wherein forming the polycrystalline diamond compact and heating the polycrystalline diamond compact and the one or more alloying materials are performed in different heating processes. 10. The method of claim 1 , wherein: heating the polycrystalline diamond compact and the one or more alloying materials to the effective temperature and for the effective time to alloy at least some of the at least one Group VIII metal with the phosphorous includes subjecting the polycrystalline diamond compact to a temperature of about 200° C. to about 1000° C.; or heating the polycrystalline diamond compact and the one or more alloying materials to the effective temperature and for the effective time to alloy at least some of the at least one Group VIII metal with the phosphorous includes subjecting the polycrystalline diamond compact to the effective temperature for greater than about 12 hours. 11. The method of claim 1 , wherein heating the polycrystalline diamond compact and the one or more alloying materials and subjecting the assembly to an inert environment is effective to form a first region in the polycrystalline diamond table adjacent to the upper surface thereof and a second region remote from the upper surface of the polycrystalline diamond table, wherein the first region includes an alloy disposed within at least a portion of the interstitial regions thereof and the second region is free of the alloy, wherein the alloy includes the at least one Group VIII metal and the phosphorus. 12. A method of fabricating a thermally-stable polycrystalline diamond compact, the method comprising: providing a polycrystalline diamond compact including a polycrystalline diamond table bonded to an interfacial surface of a substrate, the polycrystalline diamond table including an upper surface remote from the interfacial surface of the substrate, at least one lateral surface, and a chamfer extending between the at least one lateral surface and the upper surface, wherein the polycrystalline diamond table includes a plurality of bonded diamond grains defining a plurality of interstitial regions, at least a portion of the plurality of interstitial regions including at least one Group VIII metal; positioning one or more alloying materials adjacent to at least a portion of the upper surface, the at least one lateral surface, and the chamfer of the polycrystalline diamond table to form an assembly, wherein the one or more alloying materials include phosphorus; subjecting the assembly to an inert environment; and while the assembly is subjected to the inert environment, heating the assembly to an effective temperature and for an effective time to alloy at least some of the at least one Group VIII metal with the phosphorous. 13. The method of claim 12 , wherein subjecting the assembly to an inert environment includes subjecting the assembly to a vacuum of less than about 10-2 torr. 14. The method of claim 12 , wherein subjecting the assembly to an inert environment includes subjecting the assembly to a vacuum of about 10-3 torr to about 10-9 torr. 15. The method of claim 12 , wherein heating the assembly to the effective temperature and for the effective time to alloy at least some of the at least one Group VIII metal with the phosphorus includes subjecting the assembly to a temperature of about 200° C. to about 1000° C. 16. The method of claim 12 , wherein heating the assembly to the effective temperature and for the effective time to alloy at least some of the at least one Group VIII metal with the phosphorus is performed under a diamond-stable high-pressure/high-temperature process. 17. The method of claim 12 , wherein heating the assembly to the effective temperature and for the effective time forms a first region in the polycrystalline diamond table adjacent to the upper surface thereof and a second region remote from the upper surface of the polycrystalline diamond table, wherein the first region includes an alloy disposed within at least a portion of the interstitial regions thereof and the second region is free of the alloy, wherein the alloy includes the at least one Group VIII metal and the phosphorus. 18. A method of fabricating a thermally-stable polycrystalline diamond compact, the method comprising: forming a polycrystalline diamond compact including a polycrystalline diamond table adjacent to an interfacial surface of a substrate, the polycrystalline diamond table including a nonplanar upper surface remote from the interfacial surface of the substrate and at least one lateral surface, wherein the polycrystalline diamond table includes a plurality of bonded diamond grains defining a plurality of interstitial regions, at least a portion of the plurality of interstitial regions including at least one Group VIII metal disposed therein; subjec

Assignees

Inventors

Classifications

  • using moulds or presses · CPC title

  • Interface between the substrate and the cutting element · CPC title

  • for porous or cellular structure, e.g. for use with diamonds as abrasives · CPC title

  • Aspects linked to processes or compositions used in powder metallurgy · CPC title

  • characterised by the material treated · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10022843B2 cover?
Embodiments of the invention relate to methods of forming polycrystalline diamond compacts (“PDCs”), wherein the PDC includes a polycrystalline diamond (“PCD”) table in which at least one Group VIII metal is at least partially alloyed with phosphorus and/or at least one other alloying element to improve the thermal stability of the PCD table. The disclosed PDCs may be used in a variety of appli…
Who is the assignee on this patent?
Us Synthetic Corp
What technology area does this patent fall under?
Primary CPC classification B24D18/0009. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Jul 17 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).