Polishing pad, polishing apparatus and method for manufacturing polishing pad

US10022836B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10022836-B2
Application numberUS-201514848147-A
CountryUS
Kind codeB2
Filing dateSep 8, 2015
Priority dateSep 19, 2014
Publication dateJul 17, 2018
Grant dateJul 17, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present invention relates to a polishing pad comprising a base sheet containing a restriction layer. The invention also relates to a polishing apparatus and a method for manufacturing a polishing pad.

First claim

Opening claim text (preview).

What is claimed is: 1. A polishing pad comprising a polishing sheet and a base sheet, wherein the base sheet comprises: a restriction layer consisting of a plurality of first oriented fibers, a plurality of second oriented fibers and a plurality of third oriented fibers, wherein all the first oriented fibers are arranged entirely in a first direction; all the second oriented fibers are arranged entirely in a second direction; all the third oriented fibers are arranged entirely in a third direction; the first direction, the second direction and the third direction are substantially parallel to an upper surface of the restriction layer; the first oriented fibers and the second oriented fibers are located on a same layer structure and woven with each other; the first direction intersects with the second direction; and the third oriented fibers intersect with the first oriented fibers and the second oriented fibers; and a first polymeric elastomer, wherein the restriction layer is embedded in the first polymeric elastomer. 2. The polishing pad according to claim 1 , wherein the polishing sheet comprises a surface and the surface comprises a plurality of holes. 3. The polishing pad according to claim 1 , wherein the first direction is perpendicular to the second direction. 4. The polishing pad according to claim 1 , wherein each of the first oriented fibers and/or each of the second oriented fibers runs through the base sheet. 5. The polishing pad according to claim 1 , wherein the base sheet further comprises a second polymeric elastomer, wherein the second polymeric elastomer constitutes one surface of the base sheet, and the restriction layer constitutes the other surface of the base sheet. 6. The polishing pad according to claim 1 , wherein the base sheet further comprises a second polymeric elastomer and the restriction layer is sandwiched into the second polymeric elastomer. 7. A method for manufacturing a polishing pad comprising a polishing sheet and a base sheet, wherein the base sheet comprises: a restriction layer consisting of a plurality of first oriented fibers, a plurality of second oriented fibers and a plurality of third oriented fibers, wherein all the first oriented fibers are arranged entirely in a first direction; all the second oriented fibers are arranged entirely in a second direction; all the third oriented fibers are arranged entirely in a third direction; the first direction, the second direction and the third direction are substantially parallel to an upper surface of the restriction layer; the first oriented fibers and the second oriented fibers are located on a same layer structure and woven with each other; the first direction intersects with the second direction; and the third oriented fibers intersect with the first oriented fibers and the second oriented fibers; and a first polymeric elastomer, wherein the restriction layer is embedded in the first polymeric elastomer, wherein the base sheet is provided by a process comprising: (a) providing a restriction layer consisting of a plurality of first oriented fibers, a plurality of second oriented fibers and a plurality of third oriented fibers, wherein all the first oriented fibers are arranged entirely in a first direction; all the second oriented fibers are arranged entirely in a second direction; all the third oriented fibers are arranged entirely in a third direction; the first direction, the second direction and the third direction are substantially parallel to an upper surface of the restriction layer; the first oriented fibers and the second oriented fibers are located on a same layer structure and woven with each other; the first direction intersects with the second direction; and the third oriented fibers intersect with the first oriented fibers and the second oriented fibers; and (b) impregnating the restriction layer into a solution comprising a first polymeric elastomer to make the restriction layer embedded in the first polymeric elastomer. 8. The method according to claim 7 , wherein the step (a) comprises weaving the first oriented fibers with the second oriented fibers and making the first oriented fibers to intersect with the second oriented fibers to provide the restriction layer.

Assignees

Inventors

Classifications

  • by impregnation · CPC title

  • B24B37/24Primary

    characterised by the composition or properties of the pad materials · CPC title

  • characterised by a multi-layered structure · CPC title

  • Resins {or natural or synthetic macromolecular compounds (B24D3/22 takes precedence)} · CPC title

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Frequently asked questions

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What does patent US10022836B2 cover?
The present invention relates to a polishing pad comprising a base sheet containing a restriction layer. The invention also relates to a polishing apparatus and a method for manufacturing a polishing pad.
Who is the assignee on this patent?
San Fang Chemical Ind Co Ltd
What technology area does this patent fall under?
Primary CPC classification B24B37/24. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Jul 17 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).