Light-emitting diode and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-10020425-B2
Application number	US-201314759603-A
Country	US
Kind code	B2
Filing date	Sep 25, 2013
Priority date	Jan 8, 2013
Publication date	Jul 10, 2018
Grant date	Jul 10, 2018

Abstract

A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.

First claim

The invention claimed is:

1. A light emitting diode, comprising:
a semiconductor stack comprising a first semiconductor layer, an active layer, and a second semiconductor layer; and
a transparent conductive layer comprising a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer, the second transparent conductive layer having a different electrical conductivity than the first transparent conductive layer,
wherein the first and second transparent conductive layers comprise zinc oxide, and
wherein the transparent conductive layer further comprises:
a first area where the first transparent conductive layer and the second semiconductor layer directly contact each other; and
a second area where the second transparent conductive layer and the second semiconductor layer contact each other and having less conductivity than the first area.

2. The light emitting diode of claim 1 , further comprising:
a first electrode connected to the first semiconductor layer; and
a second electrode disposed on the second transparent conductive layer.

3. The light emitting diode of claim 1 , wherein the first transparent conductive layer and the second transparent conductive layer have different thicknesses.

4. A light emitting diode, comprising:
a semiconductor stack comprising a first semiconductor layer, an active layer, and a second semiconductor layer; and
a transparent conductive layer comprising a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer, the second transparent conductive layer having a different electrical conductivity than the first transparent conductive layer,
wherein the first and second transparent conductive layers comprise zinc oxide, and wherein the transparent conductive layer comprises:
a first area where the first transparent conductive layer and the second semiconductor layer directly contact each other; and
a second area, being less conductive than the first area, comprising a distributed Bragg reflector (DBR) layer interposed between the second transparent conductive layer and the second semiconductor layer without the first transparent conductive layer therebetween.

5. The light emitting diode of claim 4 , wherein the DBR layer is formed by alternately stacking two materials having different indices of refraction, and the DBR layer comprises at least one material selected from the group consisting of SiO x , SiN x , Si x N y , SiON x , SiO 2 , TiO 2 , Nb 2 O 5 , and HfO 2 .

6. The light emitting diode of claim 4 , wherein the DBR layer comprises at least one shape selected from the group consisting of a hexagonal shape, an octagonal shape, and a circular shape.

7. The light emitting diode of claim 4 , wherein the DBR layer is disposed below a lower side of the second electrode.

8. A light emitting diode, comprising:
a semiconductor stack comprising a first semiconductor layer, an active layer, and a second semiconductor layer; and
a transparent conductive layer comprising a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer, the second transparent conductive layer having a different electrical conductivity than the first transparent conductive layer,
wherein:
the second transparent conductive layer is disposed on the first transparent conductive layer, the second transparent conductive layer comprises a first material of zinc oxide and a second material,
the first transparent conductive layer comprises the first material, and
the first transparent conductive layer comprises multiple first transparent conductive layers, and the second transparent conductive layer comprises multiple second transparent conductive layers
the second material is a heterogeneous material that comprises at least one element selected from the group consisting of Mg, Ca, Be, and Cd, and
the second material is configured to adjust an energy band gap of the second transparent conductive layer.

9. A light emitting diode, comprising:
a semiconductor stack comprising a first semiconductor layer, an active layer, and a second semiconductor layer; and
a transparent conductive layer comprising a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer, the second transparent conductive layer having a different electrical conductivity than the first transparent conductive layer,
wherein:
the second transparent conductive layer is disposed on the first transparent conductive layer, the second transparent conductive layer comprises a first material of zinc oxide and a second material,
the first transparent conductive layer comprises the first material,
the first transparent conductive layer comprises multiple first transparent conductive layers, and the second transparent conductive layer comprises multiple second transparent conductive layers,
the second material is a heterogeneous material that comprises at least one element selected from the group consisting of Cr, Mo, W, Se and Te, and
the second material is configured to adjust an energy band gap of the second transparent conductive layer.

Assignees

• Seoul Semiconductor Co Ltd

Inventors

• Shin Chan Seob
• Lim Hyoung Jin
• Kim Kyoung Wan
• Yoon Yeo Jin
• Richardson Jacob J
• Estrada Daniel
• O'Hara Evan C
• Shi Haoran

Classifications

• H01L33/46

  Electricity · mapped topic

• H01L33/42 Primary

  Electricity · mapped topic

• H01L2933/0016

  Electricity · mapped topic

• H01L2933/0058

  Electricity · mapped topic

• H01L33/60

  Electricity · mapped topic