Repairing method, manufacturing method, device and electronic apparatus of micro-LED

US10020420B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10020420-B2
Application numberUS-201515529602-A
CountryUS
Kind codeB2
Filing dateAug 18, 2015
Priority dateAug 18, 2015
Publication dateJul 10, 2018
Grant dateJul 10, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A repairing method, manufacturing method, device and electronic apparatus of micro-LED are disclosed. The method for repairing micro-LED defects comprises: obtaining a micro-LED defect pattern on a receiving substrate; forming micro-LEDs ( 703 b ) corresponding to the defect pattern on a laser-transparent repair carrier substrate ( 707 ); aligning the micro-LEDs ( 703 b ) on the repair carrier substrate ( 707 ) with defect positions on the receiving substrate, and bringing the micro-LEDs ( 703 b ) into contact with pads at the defect positions; and irradiating the repair carrier substrate with a laser from the repair carrier substrate side, to lift-off the micro-LEDs from the repair carrier substrate ( 707 ).

First claim

Opening claim text (preview).

What is claimed is: 1. A method for repairing micro-LED defects, the method comprising the steps of: obtaining micro-LED defect pattern on a receiving substrate; forming micro-LEDs corresponding to the defect pattern on a laser-transparent repair carrier substrate; aligning the micro-LEDs on the repair carrier substrate with the defect positions on the receiving substrate, and bringing the micro-LEDs into contact with the pads at the defect positions; and irradiating the repair carrier substrate with laser from the repair carrier substrate side, to lift-off the micro-LEDs from the repair carrier substrate. 2. The method according to claim 1 , wherein the step of forming micro-LEDs corresponding to the defect pattern comprises: mounting the micro-LEDs onto a temporary substrate in the defect pattern; and transferring the micro-LEDs on the temporary substrate to the repair carrier substrate. 3. The method according to claim 2 , wherein: an adhesive is coated on the temporary substrate, and the step of mounting the micro-LEDs onto a temporary substrate comprises: bringing micro-LEDs on a laser-transparent original substrate into contact with the adhesive; irradiating the original substrate with laser in the defect pattern, to lift-off the micro-LEDs from the original substrate; and keeping the lifted-off micro-LEDs in the defect pattern on the temporary substrate while releasing the un-lifted-off micro-LEDs through a partial adhesive releasing. 4. The method according to claim 3 , wherein the step of transferring the micro-LEDs on the temporary substrate to the repair carrier substrate comprises: bonding the micro-LEDs on the temporary substrate onto the repair carrier substrate; and lifting-off the micro-LEDs from the temporary substrate through a complete adhesive releasing. 5. The method according to claim 4 , wherein: the micro-LEDs on the temporary substrate are bonded onto the repair carrier substrate through a polymer thin film, and at least one part of the polymer thin film is removed after the micro-LEDs is lifted-off from the temporary substrate. 6. The method according to claim 3 , wherein: the adhesive is a UV tape, and the temporary substrate is a PET plate. 7. The method according to claim 4 , wherein the partial adhesive releasing and the complete adhesive releasing are performed through UV exposure. 8. The method according to claim 7 , wherein: the exposure time or energy used in the partial adhesive releasing is less than a standard exposure time or energy, and the exposure time or energy used in the complete adhesive releasing is higher than or equal to the standard exposure time or energy. 9. The method according to claim 1 , wherein the repair carrier substrate is a sapphire substrate. 10. A method for manufacturing a micro-LED device, said method comprising the step of repairing micro-LED defects on a receiving substrate by using the method according to claim 1 . 11. A micro-LED devicenmanufactured by using the method according to claim 10 . 12. An electronic apparatus, containing a micro-LED device according to claim 11 .

Assignees

Inventors

Classifications

  • the encapsulations exposing the passive side of the semiconductor body · CPC title

  • batch processes · CPC title

  • Package configurations · CPC title

  • of anisotropic conductive adhesives · CPC title

  • of die-attach connectors · CPC title

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What does patent US10020420B2 cover?
A repairing method, manufacturing method, device and electronic apparatus of micro-LED are disclosed. The method for repairing micro-LED defects comprises: obtaining a micro-LED defect pattern on a receiving substrate; forming micro-LEDs ( 703 b ) corresponding to the defect pattern on a laser-transparent repair carrier substrate ( 707 ); aligning the micro-LEDs ( 703 b ) on the repair carr…
Who is the assignee on this patent?
Goertek Inc, Goertek Inc
What technology area does this patent fall under?
Primary CPC classification H01L33/0095. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 10 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).