Insulated gate bipolar transistor including charge injection regions

Patent metadata

Field	Value
Publication number	US-10020388-B2
Application number	US-201514836262-A
Country	US
Kind code	B2
Filing date	Aug 26, 2015
Priority date	Apr 9, 2009
Publication date	Jul 10, 2018
Grant date	Jul 10, 2018

Abstract

A semiconductor device is disclosed. One embodiment provides a cell area and a junction termination area at a first side of a semiconductor zone of a first conductivity type. At least one first region of a second conductivity type is formed at a second side of the semiconductor zone. The at least one first region is opposed to the cell area region. At least one second region of the second conductivity type is formed at the second side of the semiconductor zone. The at least one second region is opposed to the cell area region and has a lateral dimension smaller than the at least first region.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a cell area and a junction termination area at a first surface of a semiconductor body comprising a drift zone of a first conductivity type;
a plurality of charge injection regions of a second conductivity type spaced from one another and adjoining a second surface of the semiconductor body; and
a semiconductor region of the second conductivity type adjoining the second surface of the semiconductor body and being opposed to at least the cell area region, wherein each of the plurality of charge injection regions is laterally confined by the semiconductor region of the second conductivity type, and wherein the plurality of charge injection regions extend deeper into the semiconductor body from the second surface than the semiconductor region, and wherein a lateral dimension of at least some of the plurality of charge injection regions being successively arranged in a direction from the cell area to the junction termination area decreases in a direction from the cell area to the junction termination area.

2. The semiconductor device of claim 1 , wherein
a shape of the charge injection regions in a sectional plane parallel to the second surface is any one of circular, rectangular with rounded corners, elliptic, ring-shaped.

3. The semiconductor device of claim 1 , wherein
at least one of the charge injection regions is opposed to the junction termination area.

4. The semiconductor device of claim 3 , wherein
a lateral dimension of at least some of the plurality of charge injection regions successively arranged in the direction from the cell area to the junction termination area is equal.

5. The semiconductor device of claim 1 , wherein
a lateral dimension of each of the plurality of charge injection regions along a direction from the cell area to the junction termination area is in a range of 2 μm to 100 μm.

6. The semiconductor device of claim 1 , further comprising
a field stop zone of the first conductivity type at the second surface of the semiconductor body, a vertical distance of the field stop zone to the first surface being smaller than the corresponding vertical distance of the plurality of charge injection regions to the first surface.

7. The semiconductor device of claim 1 , further comprising
a field stop zone of the first conductivity type at the second surface of the semiconductor body, a vertical distance of the field stop zone to the first surface being smaller than the corresponding vertical distance of the semiconductor region of the second conductivity type to the first surface.

8. An insulated gate bipolar transistor, comprising:
a cell area and a junction termination area at a first surface of a semiconductor body comprising a drift zone of a first conductivity type;
a plurality of charge injection regions of a second conductivity type spaced from one another and adjoining a second surface of the semiconductor body;
a semiconductor region of the second conductivity type adjoining the second surface of the semiconductor body and opposed to at least the cell area region, wherein each of the plurality of charge injection regions is laterally confined by the semiconductor region of the second conductivity type, and wherein the plurality of change injection regions extend deeper into the semiconductor body from the second surface than the semiconductor region; and
a field stop zone of the first conductivity type at the second surface of the semiconductor body, a vertical distance of the field stop zone to the first surface being smaller than the corresponding vertical distance of the plurality of charge injection regions to the first surface, wherein a lateral dimension of at least some of the plurality of charge injection regions being successively arranged in a direction from the cell area to the junction termination area decreases from the cell area to the junction termination area.

9. The semiconductor device of claim 8 , wherein a shape of the charge injection regions in a sectional plane parallel to the second surface is any one of circular, rectangular with rounded corners, elliptic, ring-shaped.

10. The semiconductor device of claim 8 , wherein at least one of the charge injection regions is opposed to the junction termination area.

11. The semiconductor device of claim 10 , wherein a lateral dimension of each of the plurality of charge injection regions along a direction from the cell area to the junction termination area is in a range of 2 μm to 100 μm.

12. A semiconductor device, comprising:
a cell area and a junction termination area at a first surface of a semiconductor body comprising a drift zone of a first conductivity type;
a plurality of charge injection regions of a second conductivity type spaced from one another and adjoining a second surface of the semiconductor body; and
a semiconductor region of the second conductivity type adjoining the second surface of the semiconductor body and being opposed to at least the cell area region, wherein each of the plurality of charge injection regions is laterally confined by the semiconductor region of the second conductivity type, wherein a lateral dimension of at least some of the plurality of charge injection regions being successively arranged in a direction from the cell area to the junction termination area decreases from the cell area to the junction termination area.

Assignees

• Infineon Technologies Austria Ag

Inventors

• Schulze Hans-Joachim

Classifications

• H01L29/0696

  Electricity · mapped topic

• H01L29/1095

  Electricity · mapped topic

• H01L29/7395 Primary

  Electricity · mapped topic

• H01L29/0834

  Electricity · mapped topic

• H01L29/7393

  Electricity · mapped topic