Display device

Patent metadata

Field	Value
Publication number	US-10020324-B2
Application number	US-201715429017-A
Country	US
Kind code	B2
Filing date	Feb 9, 2017
Priority date	Oct 7, 2013
Publication date	Jul 10, 2018
Grant date	Jul 10, 2018

Abstract

A disclosed display device includes a first oxide semiconductor layer and an oxide semiconductor connection wire both formed from an oxide semiconductor material layer over a substrate. The oxide semiconductor connection wire is integrally connected to the first oxide semiconductor layer and has a lower sheet resistance than the first oxide semiconductor layer. The display device also includes a first gate electrode either over the first oxide semiconductor layer or between the first oxide semiconductor layer and the substrate. The display device further includes a first gate insulation layer between the first oxide semiconductor layer and the first gate electrode.

First claim

What is claimed is:

1. A display device, comprising:
a display panel including a plurality of pixels respectively defined by a plurality of data lines and a plurality of gate lines crossing each other, and a common wire crossing the gate lines; and
a driver to drive the data lines or the gate lines,
wherein the display panel further includes:
a first oxide semiconductor layer over a substrate, the first oxide semiconductor layer being a first portion of an oxide semiconductor material layer over the substrate;
a first oxide semiconductor connection wire over the substrate, wherein the first oxide semiconductor connection wire is formed from a second portion of the oxide semiconductor material layer, is integrally connected to the first oxide semiconductor layer, and has a lower sheet resistance than the first oxide semiconductor layer;
a first gate electrode either over the first oxide semiconductor layer or between the first oxide semiconductor layer and the substrate;
a gate insulation layer between the first oxide semiconductor layer and the first gate electrode; and
an interlayer insulating layer over the first oxide semiconductor connection wire and having a first contact hole above the first oxide semiconductor connection wire, and

wherein one of the data line and a common wire is disposed on the interlayer insulating layer, overlaps the first contact hole, and is connected to the first oxide semiconductor connection wire through the first contact hole.

2. The display device of claim 1 , wherein the first gate electrode substantially overlaps the first oxide semiconductor layer such that a middle portion of the first gate electrode overlaps a middle portion of the first oxide semiconductor layer.

3. The display device of claim 1 , wherein the common wire extends substantially parallel to the data lines, and
wherein the common wire directly contacts the first oxide semiconductor connection wire through the first contact hole.

4. The display device of claim 1 , wherein the display panel further includes:
a second oxide semiconductor connection wire over the substrate, wherein the second oxide semiconductor connection wire is a third portion of the oxide semiconductor material layer, is integrally connected to the first oxide semiconductor layer, and has a lower sheet resistance than the first oxide semiconductor layer;
a second oxide semiconductor layer over the substrate, wherein the second oxide semiconductor layer is a fourth portion of the oxide semiconductor material layer, is integrally connected to the second oxide semiconductor connection wire, and has a higher sheet resistance than the first and the second oxide semiconductor connection wires; and
a second gate electrode either over the second oxide semiconductor layer or between the second oxide semiconductor layer and the substrate,
wherein the second oxide semiconductor connection wire connects the second oxide semiconductor layer to the first oxide semiconductor layer.

5. The display device of claim 4 , wherein the display panel further includes:
a third oxide semiconductor connection wire over the substrate, wherein the third oxide semiconductor connection wire is a fifth portion of the oxide semiconductor material layer, is integrally connected to the second oxide semiconductor layer, and has a lower sheet resistance than the first and the second oxide semiconductor layers,
wherein the interlayer insulating layer has a second contact hole above the third oxide semiconductor connection wire, and
wherein one of the data lines is disposed on the interlayer insulating layer, overlaps with the second contact hole, and is connected to the third oxide semiconductor connection wire through the second contact hole.

6. The display device of claim 1 , wherein the first oxide semiconductor connection wire is formed by either exposing the second portion of the oxide semiconductor material layer to plasma or adding impurities to the second portion of the oxide semiconductor material layer so that the first oxide semiconductor connection wire has a higher conductivity than the first oxide semiconductor layer.

7. The display device of claim 1 , wherein the oxide semiconductor material layer is one of a Gallium based material and an oxide semiconductor material having Zinc.

8. A display device, comprising:
a display panel including a plurality of pixels respectively defined by a plurality of data lines and a plurality of gate lines crossing each other; and
a driver to drive the data lines or the gate lines,
wherein the display panel further includes:
a first oxide semiconductor layer over a substrate, the first oxide semiconductor layer being a first portion of an oxide semiconductor material layer over the substrate;
a first gate electrode either over the first oxide semiconductor layer or between the first oxide semiconductor layer and the substrate;
an oxide semiconductor connection wire over the substrate, wherein the oxide semiconductor connection wire is a second portion of the oxide semiconductor material layer, is integrally connected to the first oxide semiconductor layer, and has a lower sheet resistance than the first oxide semiconductor layer;
a second oxide semiconductor layer over the substrate, wherein the second oxide semiconductor layer is a third portion of the oxide semiconductor material layer, is integrally connected to the oxide semiconductor connection wire, and has a higher sheet resistance than the oxide semiconductor connection wire; and
a second gate electrode either over the second oxide semiconductor layer or between the second oxide semiconductor layer and the substrate, and

wherein one part of the oxide semiconductor connection wire connects the second oxide semiconductor layer to the first oxide semiconductor layer.

9. The display device of claim 8 , wherein the oxide semiconductor connection wire is formed by either exposing the oxide semiconductor material layer to plasma or adding impurities to the oxide semiconductor material layer to increase the conductivity of the oxide semiconductor material layer.

10. The display device of claim 8 , wherein the oxide semiconductor material layer is one of a Gallium based material and an oxide semiconductor material having Zinc.

11. A display device, comprising:
a display panel including a plurality of pixels respectively defined by a plurality of data lines and a plurality of gate lines crossing each other, a power wire crossing the gate lines, a cathode, and a common wire crossing the gate lines; and
a driver to drive the data lines or the gate lines,
wherein the display panel includes:
an oxide semiconductor connection wire over a substrate, the oxide semiconductor connection wire being formed from an oxide semiconductor material layer and having resistance characteristics of a conductor;
a first interlayer insulating layer;
a first conductive layer overlapping a first contact hole in the first insulating layer and connected to the oxide semiconductor connection wire through the first contact hole in the first interlayer insulating layer;
a second interlayer insulating layer; and
a second conductive layer overlapping a second contact hole in the first and the second insulating layers, and connected to the oxide semiconductor connection wire through the second contact hole in the first interlayer insulating layer and the second interlayer insulating layer,

wherein the oxide semiconductor connection wire connects the first conductive layer to the second conductive layer, and
wherein one of the first and the second conductive layers is one of the gate lines, the data lines, a pixel electrode, the cathode, and the common wire, an

Assignees

• Lg Display Co Ltd

Inventors

• Park Chonghun
• Yang Seung-Yong

Classifications

• H01L29/66969

  Electricity · mapped topic

• H01L29/24

  Electricity · mapped topic

• H01L27/3262

  Electricity · mapped topic

• H01L27/1225

  Electricity · mapped topic

• H01L29/78696

  Electricity · mapped topic