Method for cleaning substrate

Patent metadata

Field	Value
Publication number	US-10020184-B2
Application number	US-201715454134-A
Country	US
Kind code	B2
Filing date	Mar 9, 2017
Priority date	Jun 29, 2015
Publication date	Jul 10, 2018
Grant date	Jul 10, 2018

Abstract

A method for cleaning a substrate is provided. The method includes providing a substrate. Metal compound residues are formed over the substrate. The method includes exposing the substrate to an organic plasma to volatilize the metal compound residues. The organic plasma is generated from a gas. The gas includes an organic gas, and the organic gas is made of a hydrocarbon compound or an alcohol compound.

First claim

What is claimed is:

1. A method for cleaning a substrate, comprising:
providing a substrate;
depositing an etch stop layer over the substrate, wherein the etch stop layer comprises a metal compound;
depositing a dielectric layer over the etch stop layer;
performing a plasma etching process to remove a first portion of the dielectric layer and a second portion of the etch stop layer, wherein metal compound residues are formed from the second portion and formed over at least one of the dielectric layer or the etch stop layer, the plasma etching process forms an opening in the dielectric layer and a recess in the etch stop layer, and the opening is over the recess; and
exposing the substrate to an organic plasma to volatilize the metal compound residues, wherein the organic plasma removes the etch stop layer exposed by the opening.

2. The method for cleaning a substrate as claimed in claim 1 , wherein the plasma etching process comprises a fluorine-containing plasma etching process.

3. The method for cleaning a substrate as claimed in claim 1 , further comprising:
after the volatilization of the metal compound residues, exposing the substrate to an oxygen atom-containing plasma to volatilize organic compound residues formed over the substrate.

4. The method for cleaning a substrate as claimed in claim 1 , wherein the organic plasma is generated from a gas, the gas comprises an organic gas, and the organic gas is made of a hydrocarbon compound or an alcohol compound.

5. The method for cleaning a substrate as claimed in claim 4 , wherein the hydrocarbon compound comprises alkane, alkene, or alkyne, and the alcohol compound comprises CH 3 OH, C 2 H 5 OH, or C 3 H 7 OH.

6. The method for cleaning a substrate as claimed in claim 5 , wherein the gas further comprises a chain termination gas, and the chain termination gas is made of hydrogen, carbon oxide, carbon dioxide, oxygen, or a combination thereof.

7. A method for cleaning a substrate, comprising:
providing a plasma processing apparatus comprising a housing, an upper electrode plate, a lower electrode pedestal, and a gas exhaust unit, wherein a plasma processing chamber is in the housing, the upper electrode plate and the lower electrode pedestal are in the plasma processing chamber, the housing has a gas outlet, and the gas exhaust unit is connected to the gas outlet;
providing a substrate in the plasma processing chamber and over the lower electrode pedestal;
forming a metal compound layer over the substrate;
performing a plasma etching process to remove a portion of the metal compound layer, wherein during the plasma etching process, metal compound residues are formed over the substrate;
exposing the substrate to an organic plasma to volatilize the metal compound residues into a gaseous metal compound; and
exhausting the gaseous metal compound from the plasma processing chamber using the gas exhaust unit.

8. The method for cleaning a substrate as claimed in claim 7 , wherein the gaseous metal compound comprises metal organics.

9. The method for cleaning a substrate as claimed in claim 8 , wherein the metal organics comprise an alkyl metal compound, an alkoxy metal compound, an alkoxy alkyl metal compound, or a combination thereof.

10. The method for cleaning a substrate as claimed in claim 9 , wherein the metal organics comprise aluminum, gallium, indium, or titanium.

11. The method for cleaning a substrate as claimed in claim 7 , wherein the metal compound residues are in a solid state.

12. The method for cleaning a substrate as claimed in claim 11 , wherein the metal compound residues are made of a Group III-A metal fluoride, a Group III-A metal oxide, a Group III-A metal nitride, a Group IV-B metal fluoride, a Group IV-B metal oxide, or a Group IV-B metal nitride.

13. The method for cleaning a substrate as claimed in claim 7 , wherein the organic plasma is generated from a gas, the gas comprises an organic gas, and the organic gas is made of a hydrocarbon compound or an alcohol compound.

14. The method for cleaning a substrate as claimed in claim 13 , wherein the hydrocarbon compound comprises alkane, alkene, or alkyne.

15. The method for cleaning a substrate as claimed in claim 13 , wherein the alcohol compound comprises CH 3 OH, C 2 H 5 OH, or C 3 H 7 OH.

16. A method for cleaning a substrate, comprising:
forming a metal compound layer over a substrate;
performing a plasma etching process to remove a portion of the metal compound layer, wherein during the plasma etching process, metal compound residues are formed over the metal compound layer; and
exposing the metal compound layer to an organic plasma to volatilize the metal compound residues into a gaseous metal compound.

17. The method for cleaning a substrate as claimed in claim 16 , wherein the plasma etching process comprises a fluorine-containing plasma etching process.

18. The method for cleaning a substrate as claimed in claim 16 , further comprising:
after the volatilization of the metal compound residues, exposing the metal compound layer to an oxygen atom-containing plasma to volatilize organic compound residues formed over the metal compound layer.

19. The method for cleaning a substrate as claimed in claim 16 , wherein the organic plasma is generated from a gas, the gas comprises an organic gas, and the organic gas is made of a hydrocarbon compound or an alcohol compound.

20. The method for cleaning a substrate as claimed in claim 19 , wherein the hydrocarbon compound comprises alkane, alkene, or alkyne, and the alcohol compound comprises CH 3 OH, C 2 H 5 OH, or C 3 H 7 OH.

Assignees

• Taiwan Semiconductor Mfg Co Ltd
• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Hong Shih-Ping
• Liu Yu-Cheng

Classifications

• H10P72/0421

  for drying etching · CPC title

• H10P70/234

  the processing being the formation of vias or contact holes · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• H10P70/00

  Cleaning of wafers, substrates or parts of devices · CPC title

• H10P50/285

  of materials not containing Si, e.g. PZT or Al2O3 · CPC title