Magnetic sensor device

Patent metadata

Field	Value
Publication number	US-10019863-B2
Application number	US-201515315176-A
Country	US
Kind code	B2
Filing date	Jun 9, 2015
Priority date	Jun 11, 2014
Publication date	Jul 10, 2018
Grant date	Jul 10, 2018

Abstract

A magnetic sensor device includes: a magnet; yokes arranged on the magnet; and a magnetoresistance effect element to which is applied a leakage magnetic field emitted from the yokes to an exterior thereof. A detection region of the magnetoresistance effect element is at the side opposite to the magnet. The magnetoresistance effect element detects a change of a bias magnetic field of the magnetoresistance effect element that occurs when the object to be detected including the hard magnetic material passes through the detection region. The magnetic sensor device can accurately detect an object to be detected using a hard magnetic material.

First claim

The invention claimed is:

1. A magnetic sensor device comprising:
a magnet;
a first yoke arranged on the magnet; and
a magnetoresistance effect element to apply a leakage magnetic field released from the first yoke to outside the first yoke, wherein
a detection region of the magnetoresistance effect element is disposed at a side of the magnetoresistance effect element opposite to the magnet;
the magnetoresistance effect element is to detect a change of a bias magnetic field of the magnetoresistance effect element that occurs when an object to be detected including a hard magnetic material passes through the detection region; and
a magnitude of the leakage magnetic field satisfies a condition that a change of the bias magnetic field of the magnetoresistance effect element that occurs due to a combination of the leakage magnetic field and a magnetic field due to spontaneous magnetization of the object to be detected is larger than a change of the bias magnetic field of the magnetoresistance effect element that occurs due to application of the leakage magnetic field to the object to be detected.

2. The magnetic sensor device according to claim 1 , wherein
magnetic poles of the magnet are arranged along a passage direction of passage of the object to be detected;
the first yoke is formed both on a magnetic pole end at a front end of the magnet and on another magnetic pole end at a rear end of the magnet in the passage direction; and
the magnetoresistance effect element is disposed on a virtual line orthogonal to the leakage magnetic field at an intermediate portion in the passage direction of the first yoke formed on the front end of the magnet and on the rear end of the magnet.

3. The magnetic sensor device according to claim 1 , wherein
magnetic poles of the magnet are arranged along a direction orthogonal to a passage direction of passage of the object to be detected;
the first yoke is formed at a side of the magnet opposing the magnetoresistance effect element; and
the magnetoresistance effect element is disposed on a virtual line extending in a direction of arrangement of the magnet and the first yoke.

4. The magnetic sensor device according to claim 3 , further comprising:
a second yoke arranged on the magnet, wherein
the second yoke is formed at a side of the magnet opposite to the side of the magnet opposing the magnetoresistance effect element; and
a length of the second yoke in the passage direction is shorter than a length of the first yoke in the passage direction.

5. The magnetic sensor device according to claim 3 , further comprising:
a second yoke arranged on the magnet, wherein
the second yoke is formed in the passage direction on both a front end and a rear end of the magnet.

6. The magnetic sensor device according to claim 5 , wherein
the second yoke is continuous from the side of the magnet opposite the magnetoresistance effect element to the side of the magnet opposing the magnetoresistance effect element.

7. The magnetic sensor device according to claim 1 , wherein
the magnetoresistance effect element comprises a plurality of component elements arranged along a longitudinal direction intersecting a conveyance direction, the conveyance direction being a direction of passage through the detection region; and
the component elements are formed tilted relative to the conveyance direction and the longitudinal direction.

8. The magnetic sensor device according to claim 3 , wherein
the magnetoresistance effect element comprises a plurality of component elements arranged along a longitudinal direction intersecting a conveyance direction, the conveyance direction being the direction of passage through the detection region;
the component elements are formed tilted relative to the conveyance direction and the longitudinal direction;
the component elements are arranged in two rows extending along the longitudinal direction; and
among the component elements arranged in one of the two rows and in another of the two rows, the component elements adjacent to one another in the conveyance direction have mutually different directions of tilt.

9. The magnetic sensor device according to claim 7 , wherein
the component elements adjacent to one another in the longitudinal direction have the same tilt.

10. A magnetic sensor device comprising:
a magnet;
a first yoke arranged on the magnet;
a magnetoresistance effect element to apply a leakage magnetic field released from the first yoke to outside the first yoke; and
a second yoke arranged on the magnet, wherein
a detection region of the magnetoresistance effect element is disposed at a side of the magnetoresistance effect element opposite to the magnet;
the magnetoresistance effect element is to detect a change of a bias magnetic field of the magnetoresistance effect element that occurs when an object to be detected including a hard magnetic material passes through the detection region;
the magnetoresistance effect element is disposed on a virtual line extending in a direction of arrangement of the magnet and the first yoke;
magnetic poles of the magnet are arranged along a direction orthogonal to a passage direction of passage of the object to be detected;
the first yoke is formed at a side of the magnet opposing the magnetoresistance effect element;
the second yoke is formed at a side of the magnet opposite to the side of the magnet opposing the magnetoresistance effect element; and
a length of the second yoke in the passage direction is shorter than a length of the first yoke in the passage direction.

11. The magnetic sensor device according to claim 10 , wherein
the magnetoresistance effect element comprises a plurality of component elements arranged along a longitudinal direction intersecting a conveyance direction, the conveyance direction being a direction of passage through the detection region; and
the component elements are formed tilted relative to the conveyance direction and the longitudinal direction.

12. The magnetic sensor device according to claim 10 , wherein
the magnetoresistance effect element comprises a plurality of component elements arranged along a longitudinal direction intersecting a conveyance direction, the conveyance direction being the direction of passage through the detection region;
the component elements are formed tilted relative to the conveyance direction and the longitudinal direction;
the component elements are arranged in two rows extending along the longitudinal direction; and
among the component elements arranged in one of the two rows and in another of the two rows, the component elements adjacent to one another in the conveyance direction have mutually different directions of tilt.

13. The magnetic sensor device according to claim 11 , wherein
the component elements adjacent to one another in the longitudinal direction have the same tilt.

14. The magnetic sensor device according to claim 12 , wherein
the component elements adjacent to one another in the longitudinal direction have the same tilt.

15. A magnetic sensor device comprising:
a magnet;
a first yoke arranged on the magnet;
a magnetoresistance effect element to apply a leakage magnetic field released from the first yoke to outside the first yoke; and
a second yoke arranged on the magnet, wherein
a detection region of the magnetoresistance effect element is disposed at a side of the magnetoresistance effect element opposite to the magnet;
the magnetoresistance effect element is to detect a change of a bias magnetic field of the magnetoresistance effect element that occurs when an object to be de

Assignees

• Mitsubishi Electric Corp

Inventors

• Asano Hiroyuki
• Ogomi Tomokazu
• Shimohata Kenji
• Yoshioka Sadaaki

Classifications

• G01R33/09

  Magnetoresistive devices · CPC title

• G07D7/04 Primary

  Testing magnetic properties of the materials thereof, e.g. by detection of magnetic imprint (G07D7/01 takes precedence) · CPC title