Copper alloy and method for manufacturing the same

US10017840B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10017840-B2
Application numberUS-201514694038-A
CountryUS
Kind codeB2
Filing dateApr 23, 2015
Priority dateNov 1, 2012
Publication dateJul 10, 2018
Grant dateJul 10, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A copper alloy of the present invention contains 5.00 to 8.00 atomic percent of Zr and includes Cu and a Cu—Zr compound, and two phases of the Cu and the Cu—Zr compound form a mosaic-like structure which includes no eutectic phase and in which when viewed in cross section, crystals having a size of 10 μm or less are dispersed. This copper alloy is formed by a manufacturing method including a sintering step of performing spark plasma sintering on a Cu—Zr binary system alloy powder at a temperature of 0.9 Tm ° C. or less (Tm(° C.): melting point of the alloy powder) by supply of direct-currant pulse electricity, the Cu—Zr binary system alloy powder having an average grain diameter of 30 μm or less and a hypoeutectic composition which contains 5.00 to 8.00 atomic percent of Zr. The Cu—Zr compound may include at least one of Cu 5 Zr, Cu 9 Zr 2 , and Cu 8 Zr 3 .

First claim

Opening claim text (preview).

What is claimed is: 1. A copper alloy which contains 5.00 to 8.00 atomic percent of Zr and which includes Cu and a Cu—Zr compound, wherein two phases of the Cu and the Cu—Zr compound form a mosaic structure which includes no eutectic phase and in which when viewed in cross section, crystals having a size of 10 μm or less are dispersed. 2. The copper alloy according to claim 1 , wherein the Cu—Zr compound includes at least one of Cu 5 Zr, Cu 9 Zr 2 , and Cu 8 Zr 3 . 3. The copper alloy according to claim 1 , being formed from a Cu—Zr binary system alloy powder having a hypoeutectic composition by spark plasma sintering. 4. The copper alloy according to claim 3 , wherein after spark plasma sintering is performed on a Cu—Zr binary system alloy powder, wire drawing is performed, so that the mosaic structure elongated in the drawing direction is formed. 5. The copper alloy according to claim 3 , wherein after spark plasma sintering is performed on a Cu—Zr binary system alloy powder, rolling is performed, so that the mosaic structure flattened in the rolling direction is formed. 6. A method for manufacturing a copper alloy including Cu and a Cu—Zr compound, the method comprising: a sintering step of performing spark plasma sintering on a Cu—Zr binary system alloy powder at a temperature of 0.9 Tm (° C.) or less, where Tm (° C.) is the melting point of the alloy powder, by supply of direct-current pulse electricity, the Cu—Zr binary system alloy powder having an average grain diameter of 30 μm or less and a hypoeutectic composition which contains 5.00 to 8.00 atomic percent of Zr, wherein two phases of the Cu and the Cu—Zr compound form a mosaic structure which includes no eutectic phase and in which when viewed in cross section, crystals having a size of 10 μm or less are dispersed. 7. The method for manufacturing a copper alloy according to claim 6 , further comprising, before the sintering step, a powdering step of forming the Cu—Zr binary system alloy powder having an average grain diameter of 30 μm or less by performing a high-pressure atomizing method on a Cu—Zr binary system alloy having the hypoeutectic composition. 8. The method for manufacturing a copper alloy according to claim 6 , further comprising, after the sintering step, a wire drawing step of performing wire drawing on a spark plasma sintered copper alloy. 9. The method for manufacturing a copper alloy according to claim 8 , wherein in the wire drawing step, when a wire drawing degree η is represented by A 0 /A (A 0 : cross-sectional area before drawing, A: cross-sectional area after drawing), the wire drawing is performed at a wire drawing degree η of 3.0 or more. 10. The method for manufacturing a copper alloy according to claim 6 , further comprising, after the sintering step, a rolling step of performing rolling on a spark plasma sintered copper alloy at 500° C. or less.

Assignees

Inventors

Classifications

  • C22C9/00Primary

    Alloys based on copper · CPC title

  • Alloys based on copper · CPC title

  • Apparatus or processes specially adapted for manufacturing conductors or cables · CPC title

  • of copper or alloys based thereon · CPC title

  • After-treatment of workpieces or articles {(B22F3/1146 takes precedence)} · CPC title

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What does patent US10017840B2 cover?
A copper alloy of the present invention contains 5.00 to 8.00 atomic percent of Zr and includes Cu and a Cu—Zr compound, and two phases of the Cu and the Cu—Zr compound form a mosaic-like structure which includes no eutectic phase and in which when viewed in cross section, crystals having a size of 10 μm or less are dispersed. This copper alloy is formed by a manufacturing method including a si…
Who is the assignee on this patent?
Ngk Insulators Ltd, Univ Tohoku
What technology area does this patent fall under?
Primary CPC classification C22C9/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jul 10 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).