Method for manufacturing quantum dots

Patent metadata

Field	Value
Publication number	US-10017692-B2
Application number	US-201615059325-A
Country	US
Kind code	B2
Filing date	Mar 3, 2016
Priority date	Aug 7, 2015
Publication date	Jul 10, 2018
Grant date	Jul 10, 2018

Abstract

A method for manufacturing a quantum dot includes a method of manufacturing a quantum dot including heating a first mixture including a Group II precursor and a Group III precursor, adding an organic solvent to the first mixture and cooling the resultant under an inert gas atmosphere, adding a Group V precursor solution to the cooled resultant including the first mixture and the organic solvent to prepare a second mixture and heating the second mixture, and adding a mixture of a Group V precursor and a Group VI precursor to the second mixture to prepare a third mixture and allowing third mixture to react.

First claim

What is claimed is:

1. A method of manufacturing a mixture of quantum dots having at least two kinds of cores, the method comprising:
heating a first mixture including a Group II precursor and a Group III precursor;
adding an organic solvent to the first mixture to provide a resultant and cooling the resultant under an inert gas atmosphere;
adding a Group V precursor solution to the cooled resultant including the first mixture and the organic solvent to prepare a second mixture and heating the second mixture; and
adding a mixture of a Group V precursor and a Group VI precursor to the second mixture to prepare a third mixture and allowing third mixture to react.

2. The method as claimed in claim 1 , wherein:
heating the first mixture is performed in a reactor at about 100° C. to about 140° C. for about 30 to 90 minutes, and
cooling the resultant obtained by adding the organic solvent to the first mixture cools the resultant to room temperature.

3. The method as claimed in claim 2 , wherein heating the second mixture is performed by gradually increasing the temperature from room temperature to about 250 to about 350° C. at a rate of about 15 to 25° C./min.

4. The method as claimed in claim 3 , wherein the third mixture is prepared by dripping the mixture of the Group V precursor solution and the Group VI precursor solution into the second mixture.

5. The method as claimed in claim 4 , wherein the third mixture is allowed to react for about 5 to 15 minutes after the mixture of the Group V precursor solution and the Group VI precursor solution is dripped into the second mixture.

6. The method as claimed in claim 1 , wherein the first mixture includes the Group II precursor and the Group III precursor in a mole ratio of about 3:2.

7. The method as claimed in claim 6 , wherein the second mixture includes the Group V precursor and the Group II and Group III precursor such that a ratio of moles of the Group V precursor to a sum of moles of the Group II and Group III precursors is about 1:1.

8. The method as claimed in claim 7 , wherein the third mixture includes the Group VI precursor and the Group II and Group III precursor such that a ratio of moles of the Group VI precursor to a sum of moles of the Group II and Group III precursors about is in a range of 1:1 to 2:1.

9. The method as claimed in claim 1 , wherein a Group II element of the Group II precursor is at least one of zinc (Zn), cadmium (Cd), and mercury (Hg).

10. The method as claimed in claim 9 , wherein the Group II precursor is at least one precursor compound selected from zinc acetate, dimethyl zinc, diethyl zinc, zinc carboxylate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oxide, zinc peroxide, zinc perchlorate, zinc sulfate, cadmium oxide, dimethyl cadmium, diethyl cadmium, cadmium carbonate, cadmium acetate dihydrate, cadmium acetylacetonate, cadmium fluoride, cadmium chloride, cadmium iodide, cadmium bromide, cadmium perchlorate, cadmium phosphide, cadmium nitrate, cadmium sulfate, cadmium carboxylate, mercury iodide, mercury bromide, mercury fluoride, mercury cyanide, mercury nitrate, mercury perchlorate, mercury sulfate, mercury oxide, mercury carbonate, and mercury carboxylate.

11. The method as claimed in claim 9 , wherein a Group III element of the Group III precursor is at least one element of aluminum (Al), gallium (Ga), and indium (In).

12. The method as claimed in claim 11 , wherein the Group III precursor is at least one precursor compound selected from aluminum phosphate, aluminum acetylacetonate, aluminum chloride, aluminum fluoride, aluminum oxide, aluminum nitrate, aluminum sulfate, gallium acetylacetonate, gallium chloride, gallium fluoride, gallium oxide, gallium nitrate, gallium sulfate, indium acetate, indium chloride, indium oxide, indium nitrate, indium sulfate, and indium carboxylate.

13. The method as claimed in claim 11 , wherein a Group V element of the Group V precursor is at least one element of nitrogen (N), phosphorus (P), and arsenic (As).

14. The method as claimed in claim 13 , wherein the Group V precursor is at least one precursor compound selected from alkyl phosphine, tris(trialkylsilyl) phosphine, tris(dialkylsilyl) phosphine, tris(dialkylamino) phosphine, arsenic oxide, arsenic chloride, arsenic sulfate, arsenic bromide, arsenic iodide, nitric oxide, nitric acid, and ammonium nitrate.

15. The method as claimed in claim 13 , wherein a Group VI element of the Group VI precursor is at least one element of sulfur (S), selenium (Se), and tellurium (Te).

16. The method as claimed in claim 15 , wherein the Group VI precursor is at least one precursor compound selected from sulfur, trialkylphosphine sulfide, trialkenylphosphine sulfide, alkylamino sulfide, alkenylamino sulfide, alkylthiol, selenium, trialkylphosphine selenide, trialkenylphosphine selenide, alkylamino selenide, alkenylamino selenide, trialkylphosphine telluride, trialkenylphosphine telluride, alkylamino telluride, and alkenylamino telluride.

17. The method as claimed in claim 15 , wherein the mixture of the Group V and Group VI precursor solutions includes at least one of hexane thiol, octane thiol, decane thiol, dodecane thiol, hexadecane thiol, mercapto propyl silane, sulfur-trioctylphosphine (S-TOP), sulfur-tributylphosphine (S-TBP), sulfur-triphenylphosphine (S-TPP), sulfur-trioctylamine (S-TOA), trimethylsilyl sulfur, ammonium sulfide, sodium sulfide, selenium-trioctylphosphine (Se-TOP), selenium-tributylphosphine (Se-TBP), selenium-triphenylphosphine (Se-TPP), tellurium-tributylphosphine (Te-TBP), tellurium-triphenylphosphine (Te-TPP), tris trimethylsilyl phosphine, trisdimethylamino phosphine, triethylphosphine, tributylphosphine, trioctylphosphine, triphenylphosphine, tricyclohexylphosphine, arsenic oxide, arsenic chloride, arsenic sulfate, arsenic bromide, arsenic iodide, nitric oxide, nitric acid, and ammonium nitrate.

18. The method as claimed in claim 1 , wherein:
the Group II precursor includes a zinc-containing precursor and a cadmium-containing precursor;
the Group III precursor includes an indium-containing precursor;
the Group V precursor is a phosphine;
the Group VI precursor includes a selenium-containing precursor and sulfur-containing precursor; and
the mixture of the Group V and Group VI precursor includes a sulfur phosphine compound and a selenium phosphine compound.

19. The method as claimed in claim 15 , wherein:
the Group II precursor includes cadmium oxide and zinc acetate,
the Group III precursor includes indium acetate,
the Group V precursor includes tris(trimethylsilyl)phosphine and trioctylphosphine,
the Group VI precursor includes selenium and sulfur, and
the mixture of the Group V and Group VI precursor includes sulfur-trioctylphosphine and selenium-trioctylphosphine.

20. A method of forming a mixture of CdSe/ZnS quantum dots and InP/ZnS quantum dots, the method comprising:
heating a first mixture including cadmium oxide, zinc acetate, and indium acetate, and cooling the first mixture;
adding tris(trimethylsilyl)phosphine and trioctylphosphine to the cooled resultant including the first mixture and the organic solvent to prepare a second mixture and heating the second mixture while increasing the temperature; and
adding sulfur-trioctylphosphine and selenium-trioctylphosphine to the second mixture to prepare a third mixture and allowing third mixture to react.

Assignees

• Samsung Display Co Ltd

Inventors

• Nam Min Ki
• Lee Baek Hee
• Kim Young Min
• Park Hae Il
• Lee Dong-Hoon

Classifications

• C09K11/0811

  with zinc or cadmium · CPC title

• C09K11/08

  containing inorganic luminescent materials · CPC title

• C09K11/62

  containing gallium, indium or thallium · CPC title

• C09K11/883 Primary

  with zinc or cadmium · CPC title

• H01L27/3281

  Electricity · mapped topic