Substrate intermediary body, through-hole via electrode substrate, and through-hole via electrode formation method
US-2017372993-A1 · Dec 28, 2017 · US
Composition for forming silica layer, method for manufacturing silica layer, and electric device including silica layer
US10017646B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10017646-B2 |
| Application number | US-201715656341-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 21, 2017 |
| Priority date | Dec 8, 2016 |
| Publication date | Jul 10, 2018 |
| Grant date | Jul 10, 2018 |
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Abstract
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A composition for forming silica layer includes a silicon-containing polymer and a solvent, wherein a weight average molecular weight of the silicon-containing polymer ranges from about 2,000 to about 100,000 and a branching ratio (a) of the silicon-containing polymer calculated by Equation 1 ranges from about 0.25 to about 0.50. η= k·M a [Equation 1] In Equation 1, η is an intrinsic viscosity of a silicon-containing polymer, M is an absolute molecular weight of a silicon-containing polymer, a is a branching ratio, and k is an intrinsic constant.
First claim
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What is claimed is: 1. A composition for forming a silica layer, the composition comprising: a silicon-containing polymer; and a solvent, wherein a weight average molecular weight of the silicon-containing polymer is about 2,000 to about 100,000 and a branching ratio (a) of the silicon-containing polymer calculated by Equation 1 is about 0.25 to about 0.50: η= k·M a [Equation 1] wherein, in Equation 1, η is an intrinsic viscosity of the silicon-containing polymer, M is an absolute molecular weight of the silicon-containing polymer, a is the branching ratio, and k is an intrinsic constant. 2. The composition for forming a silica layer as claimed in claim 1 , wherein the intrinsic viscosity of the silicon-containing polymer is about 3 mg/L to about 15 mg/L. 3. The composition for forming a silica layer as claimed in claim 1 , wherein the absolute molecular weight of the silicon-containing polymer is about 2,000 g/mol to about 300,000 g/mol. 4. The composition for forming a silica layer as claimed in claim 1 , wherein the silicon-containing polymer includes a polysilazane, a polysiloxazane, or a combination thereof. 5. The composition for forming a silica layer as claimed in claim 1 , wherein the solvent includes benzene, toluene, xylene, ethylbenzene, diethylbenzene, trimethylbenzene, triethylbenzene, cyclohexane, cyclohexene, decahydronaphthalene, dipentene, pentane, hexane, heptane, octane, nonane, decane, ethylcyclohexane, methylcyclohexane, cyclohexane, cyclohexene, p-menthane, dipropylether, dibutylether, anisole, butyl acetate, amyl acetate, methylisobutylketone, or a combination thereof. 6. The composition for forming a silica layer as claimed in claim 1 , wherein the silicon-containing polymer is included in the composition in an amount of about 0.1 wt % to about 30 wt %, based on a total weight of the composition for forming a silica layer. 7. A method of manufacturing a silica layer, the method comprising: coating the composition for forming a silica layer as claimed in claim 1 on a substrate, drying the substrate coated with the composition for forming a silica layer, and curing the composition for forming a silica layer at about 250° C. to about 1,000° C. 8. An electronic device comprising the silica layer as claimed in claim 7 .
Assignees
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Classifications
the material being a silicon oxide, e.g. SiO2 · CPC title
the compound being a silazane · CPC title
of treatments performed after formation of the materials · CPC title
Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title
containing silicon · CPC title
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- What does patent US10017646B2 cover?
- A composition for forming silica layer includes a silicon-containing polymer and a solvent, wherein a weight average molecular weight of the silicon-containing polymer ranges from about 2,000 to about 100,000 and a branching ratio (a) of the silicon-containing polymer calculated by Equation 1 ranges from about 0.25 to about 0.50. η= k·M a [Equation 1] In Equation 1, η is a…
- Who is the assignee on this patent?
- Samsung Sdi Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C08G77/62. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jul 10 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).