Composition for forming gate insulating film, organic thin film transistor, electronic paper, and display device

Patent metadata

Field	Value
Publication number	US-10014474-B2
Application number	US-201514955698-A
Country	US
Kind code	B2
Filing date	Dec 1, 2015
Priority date	Jun 7, 2013
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

The present invention provides a composition for forming a gate insulating film, which improves the insulation reliability of an organic thin film transistor without greatly reducing the mobility of the organic thin film transistor, an organic thin film transistor, electronic paper, and a display device. The composition for forming a gate insulating film of the present invention contains an insulating material and a migration inhibitor selected from the group consisting of a compound represented by any of Formulae (1) to (8), a polymer compound (X) containing a repeating unit represented by Formula (A), and a polymer compound (Y) containing a repeating unit represented by Formula (B) and a repeating unit represented by Formula (C).

First claim

What is claimed is:

1. A composition for forming a gate insulating film, comprising:
an insulating material; and
a migration inhibitor represented by a polymer compound (Y) containing a repeating unit represented by Formula (B) and a repeating unit represented by Formula (C),

in Formula (B), R B represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms that may have a substituent; L B represents a single bond or a divalent organic group; and B represents a monovalent group, which is formed as a result of removing one hydrogen atom (here, a hydrogen atom of a hydroxyl group is excluded) from compounds represented by the following Formulae (Y-1),
in Formula (C), R C represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms that may have a substituent; L C represents a single bond or a divalent organic group; X represents a hydrogen atom, a fluorine atom, or a trifluoromethyl group; R f represents a fluoroalkyl group having 20 or less carbon atoms that may have an ethereal oxygen atom, in which at least one hydrogen atom is substituted with a fluorine atom, or a fluorine atom,
P—(CR 1 ═Y) n -Q  Formula (Y-1)

in Formula (Y-1), each of P and Q independently represents OH, NR 2 R 3 , or CHR 4 R 5 ; each of R 2 and R 3 independently represents a hydrogen atom or a group which can be substituted with a nitrogen atom; each of R 4 and R 5 independently represents a hydrogen atom or a substituent; Y represents CR 6 or a nitrogen atom; each of R 1 and R 6 independently represents a hydrogen atom or a substituent; at least two out of the groups represented by R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 may form a ring by being bonded to each other; n represents an integer of 1 to 5; when n represents a number of equal to or greater than 2, a plurality of atomic groups represented by (CR 1 ═Y) may be the same as or different from each other.

2. An organic thin film transistor prepared by using the composition for forming a gate insulating film according to claim 1 .

3. Electronic paper using the organic thin film transistor according to claim 2 .

4. A display device using the organic thin film transistor according to claim 2 .

Assignees

• Fujifilm Corp

Inventors

• Matsushita Yasuaki
• Matsumura Tokihiko

Classifications

• C07F9/145 Primary

  with hydroxyaryl compounds · CPC title

• H01L51/0545

  Electricity · mapped topic

• H01L51/0034

  Electricity · mapped topic

• C08F220/10

  Esters · CPC title

• H01L51/004 Primary

  Electricity · mapped topic