Method for manufacturing a light emitting element

Patent metadata

Field	Value
Publication number	US-10014436-B2
Application number	US-201715424942-A
Country	US
Kind code	B2
Filing date	Feb 6, 2017
Priority date	Dec 17, 2014
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

A method for manufacturing a light emitting element includes: a GaN layer is formed on an AlN-deposited plain or patterned substrate, and the stress between different materials is changed and buffered through thermal treatment of annealing under H 2 atmosphere or under H 2 and NH 3 mixed atmosphere, thus eliminating epitaxial wafer warp caused by such stress and improving epitaxial quality and light-emitting efficiency of the light-emitting element.

First claim

The invention claimed is:

1. A method for manufacturing a light-emitting element, the method comprising:
1) providing a substrate;
2) depositing an AlN layer over a surface of the substrate via physical vapor deposition (PVD);
3) inputting a metal source and NH 3 , and depositing an Al x Ga 1-x N (0≤x<1) layer over a surface of the AlN layer via metal-organic chemical vapor deposition (MOCVD);
4) annealing the Al x Ga 1-x N layer to form an Al x Ga 1-x N layer in irregular or island-like shape, including: turning off the metal source and NH 3 , keeping continual input of H 2 , raising a chamber temperature, and annealing the Al x Ga 1-x N layer under an H 2 atmosphere; continually raising the chamber temperature and inputting NH 3 while H 2 is being input; and continuing annealing the Al x Ga 1-x N layer under an NH 3 /H 2 mixed atmosphere;
5) depositing a GaN layer over a surface of the annealed Al x Ga 1-x N layer; and
6) depositing an n-type layer, a light-emitting layer, and a P-type layer over a surface of the GaN layer.

2. The method of claim 1 , wherein an annealing temperature under the H 2 atmosphere is 400-1200° C., and an annealing time is 100-600 s.

3. The method of claim 1 , wherein an annealing temperature under the NH 3 /H 2 mixed atmosphere is 400-1200° C., and an annealing time is 100-500 s.

4. The method of claim 1 , wherein total annealing time under H 2 and NH 3 /H 2 mixed atmosphere is 200-600 s.

5. The method of claim 1 , wherein a growth temperature for the Al x Ga 1-x N (0≤x<1) layer is 400-600° C.

6. The method of claim 1 , wherein a thickness of the Al x Ga 1-x N (0≤x<1) layer is 10-1000 Å.

7. The method of claim 1 , wherein a thickness of the AlN layer is 10-350 Å.

8. The method of claim 1 , wherein after annealing, the chamber temperature is adjusted to 950-1150° C. for depositing the GaN layer.

9. The method of claim 1 , wherein the substrate is a plain substrate, a convex-patterned substrate, or a concave-patterned substrate.

10. A method for manufacturing a light-emitting element, comprising:
1) providing a substrate;
2) depositing an AlN layer over a surface of the substrate surface via physical vapor deposition (PVD);
3) inputting a metal source and NH 3 , and depositing an Al x Ga 1-x N (0≤x<1) layer over a surface of the AlN layer via metal-organic chemical vapor deposition (MOCVD);
4) annealing the Al x Ga 1-x N layer to form an Al x Ga 1-x N layer in irregular or island-like shape, including: turning off the metal source and NH 3 , keeping continual input of H 2 , rising chamber temperature, and annealing the Al x Ga 1-x N layer under H 2 atmosphere;
5) depositing a GaN layer on the annealed Al x Ga 1-x N layer surface; and
6) depositing an n-type layer, a light-emitting layer and a P-type layer on the GaN layer surface.

11. The method of claim 10 , wherein an annealing temperature under H 2 atmosphere is 400-1200° C., and annealing time is 100-600 s.

12. The method of claim 10 , wherein a growth temperature for the Al x Ga 1-x N (0≤x<1) layer is 400-600° C.

13. The method of claim 10 , wherein thickness of the Al x Ga 1-x N (0≤x<1) layer is 10-1000 Å.

14. The method of claim 10 , wherein thickness of the AlN layer is 10-350 Å.

15. The method of claim 10 , wherein after annealing, the chamber temperature is adjusted to 950-1150° C. for depositing the GaN layer.

16. The method of claim 10 , wherein the substrate is a plain substrate, a convex-patterned substrate or a concave-patterned substrate.

Assignees

• Xiamen Sanan Optoelectronics Technology Co Ltd

Inventors

• Lee Cheng-Hung
• Chou Sheng-Wei
• Lin Chi-Hung
• LING Chan-Chan
• Chang Chia-Hung

Classifications

• H01L33/20

  Electricity · mapped topic

• H01L33/12

  Electricity · mapped topic

• H01L33/32

  Electricity · mapped topic

• H01L33/007 Primary

  Electricity · mapped topic

• H10H20/82

  Roughened surfaces, e.g. at the interface between epitaxial layers · CPC title