X-ray direct conversion detector with additional radiation illumination

Patent metadata

Field	Value
Publication number	US-10014430-B2
Application number	US-201314411542-A
Country	US
Kind code	B2
Filing date	Jul 10, 2013
Priority date	Jul 31, 2012
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

A method is disclosed for detecting incident X-ray radiation by way of a direct-converting X-ray radiation detector. A semi-conductor material used for detection purposes is irradiated with additional radiation with an energy level of at least 1.6 eV in order to produce additional charge carriers. A direct-converting X-ray radiation detector is disclosed for detecting X-ray radiation, at least including a semi-conductor material used for X-ray detection and at least one radiation source which irradiates the semi-conductor material with additional radiation, the radiation having an energy level of at least 1.6 eV. A CT system including an X-ray radiation detector is also disclosed.

First claim

The invention claimed is:

1. A method for detecting incident X-ray radiation by way of a direct-converting X-ray radiation detector that generates charge carriers in a semiconductor material, the method comprising:
irradiating the semiconductor material, used for detection purposes, with additional radiation with an energy of at least 1.6 eV and less than 10 keV, to generate additional charge carriers, wherein the semiconductor material is irradiated with the additional radiation by way of evaluation electronics.

2. The method of claim 1 , wherein the semiconductor material is irradiated with the additional radiation with an energy greater than 2.1 eV.

3. The method of claim 1 , wherein the semiconductor material is irradiated with electromagnetic radiation via the additional radiation.

4. The method of claim 1 , wherein the semiconductor material is irradiated with electron beam radiation via the additional radiation.

5. The method of claim 1 , wherein the semiconductor material is irradiated with the additional radiation on at least one of an anode side and a cathode side.

6. The method of claim 1 , wherein the semiconductor material is irradiated with the additional radiation from at least one of a z direction and a circumferential direction of a rotary detector support of a computed tomography (CT) system.

7. The method of claim 1 , wherein the semiconductor material is irradiated with the additional radiation with a pulse or continuously.

8. The method of claim 1 , wherein the semiconductor material is irradiated with the additional radiation at least one of before and during the incidence of the X-ray radiation to be detected.

9. The method of claim 1 , wherein the additional radiation comprises different energies and the semiconductor material is irradiated with the additional radiation with differing energies.

10. The method of claim 9 , wherein the irradiating includes changing the energy of the additional radiation during the irradiation.

11. The method of claim 1 , wherein the irradiating includes exciting band-to-band transitions in the semiconductor material during the irradiation.

12. The method of claim 11 , wherein the energy of the additional radiation is no more than 25% greater than an energy difference of the band-to-band transitions.

13. A direct-converting X-ray radiation detector for detecting X-ray radiation, comprising:
a semiconductor material used for detecting X-ray radiation;
evaluation electronics; and
at least one additional radiation source to irradiate the semiconductor material with additional radiation by way of the evaluation electronics, wherein the additional radiation has an energy of at least 1.6 eV and less than 10 keV.

14. The X-ray radiation detector of claim 13 , wherein the at least one additional radiation source includes at least one of an electromagnetic radiation source and an electron beam radiation source.

15. A CT system comprising the X-ray radiation detector of claim 14 .

16. The method of claim 1 , wherein the method is for use with a CT system.

17. The method of claim 3 , wherein the electromagnetic radiation comprises at least one of visible light and ultraviolet radiation.

18. The method of claim 2 , wherein the additional radiation is an electromagnetic radiation.

19. The method of claim 18 , wherein the electromagnetic radiation comprises at least one of visible light and ultraviolet radiation.

20. The method of claim 12 , wherein the energy of the additional radiation is no more than 20% greater than the energy difference of the band-to-band transitions.

21. The method of claim 20 , wherein the energy of the additional radiation is no more than 15% greater than the energy difference of the band-to-band transitions.

22. A CT system, comprising:
the direct-converting X-ray radiation detector of claim 13 .

Assignees

• Siemens Ag

Inventors

• Hackenschmied Peter
• Göderer Edgar
• Schröter Christian
• Strassburg Matthias
• Wirth Stefan

Classifications

• A61B6/4208

  characterised by using a particular type of detector · CPC title

• G01T1/24 Primary

  with semiconductor detectors · CPC title

• G01N23/046

  using tomography, e.g. computed tomography [CT] · CPC title

• G01T1/244

  Auxiliary details, e.g. casings, cooling, damping or insulation against damage by, e.g. heat, pressure or the like · CPC title

• H01L31/125

  Electricity · mapped topic