Semiconductor structures including bonding layers, multi-junction photovoltaic cells and related methods

Patent metadata

Field	Value
Publication number	US-10014429-B2
Application number	US-201514749334-A
Country	US
Kind code	B2
Filing date	Jun 24, 2015
Priority date	Jun 26, 2014
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

A method of fabricating a semiconductor structure includes the formation of a first bonding layer at least substantially comprised of a first III-V material on a major surface of a first element, and formation of a second bonding layer at least substantially comprised of a second III-V material on a major surface of a second element. The first bonding layer and the second bonding layer are disposed between the first element and the second element, and the first element and the second element are attached to one another at a bonding interface disposed between the first bonding layer and the second bonding layer. Semiconductor structures are fabricated using such methods.

First claim

What is claimed is:

1. A method of fabricating a semiconductor structure, comprising:
epitaxially growing a first bonding layer at least substantially comprised of an indium phosphide material on a major surface of a first element;
epitaxially growing a second bonding layer at least substantially comprised of at least one of a gallium arsenide material and a gallium indium phosphide material on a major surface of a second element;
doping at least one of the epitaxially grown first bonding layer and the epitaxially grown second bonding layer with an n-type dopant at a doping concentration of at least 1.5×10 19 cm −3 , and selecting the n-type dopant to comprise at least one of selenium and tellurium;
disposing the epitaxially grown first bonding layer and the epitaxially grown second bonding layer between the first element and the second element; and
attaching the first element and the second element to one another at a bonding interface disposed between the epitaxially grown first bonding layer and the epitaxially grown second bonding layer; and
wherein the epitaxially growing of first bonding layer or the epitaxially growing of second bonding layer further comprises epitaxially growing at least one bonding surface having a surface root mean square (rms) roughness of less than 5 Angstroms as-grown.

2. The method of claim 1 , wherein attaching the first element and the second element to one another comprises a direct bonding process.

3. The method of claim 1 , wherein doping at least one of the epitaxially grown first bonding layer and the epitaxially grown second bonding layer at a doping concentration of at least approximately 1.5×10 19 cm −3 comprises doping each of the epitaxially grown first bonding layer and the epitaxially grown second bonding layer at a doping concentration of at least approximately 1.5×10 19 cm −3 .

4. The method of claim 3 , wherein epitaxially growing at least one bonding surface having a surface root mean square (rms) roughness of less than 5 Angstroms as-grown comprises growing a bonding surface on each of the epitaxially grown first bonding layer and the epitaxially grown second bonding layer, each of the bonding surfaces having a surface root mean square (rms) roughness of less than 5 Angstroms as-grown.

5. The method of claim 1 , wherein doping at least one of the epitaxially grown first bonding layer and the epitaxially grown second bonding layer with an n-type dopant reduces a wavelength of an absorption edge of the at least one of the epitaxially grown first bonding layer and the epitaxially grown second bonding layer by at least approximately two hundred (200) nanometers.

6. The method of claim 1 , further comprising selecting at least one of the first element and the second element to comprise a tandem solar cell.

7. The method of claim 1 , further comprising epitaxially growing at least one of the epitaxially grown first bonding layer and the epitaxially grown second bonding layer pseudomorphically.

8. The method of claim 1 , further comprising forming each of the epitaxially grown first bonding layer and the epitaxially grown second bonding layer to have an electrical resistance less than approximately 1 mQ cm2.

9. The method of claim 1 , each of the epitaxially grown first bonding layer and the epitaxially grown second bonding layer to be at least substantially transparent to wavelengths between approximately 750 nm and approximately 920 nm.

10. The method of claim 1 , further comprising fabricating a multi junction photovoltaic device from the semiconductor structure.

11. The method of claim 4 , wherein the method does not include polishing either the bonding surface on the epitaxially grown first bonding layer or the bonding surface on the epitaxially grown second bonding layer prior to attaching the first element and the second element to one another at the bonding interface disposed between the epitaxially grown first bonding layer and the epitaxially grown second bonding layer.

Assignees

• Soitec Silicon On Insulator

Inventors

• Newman Fred
• Reinhardt Frank
• Arena Chantal

Classifications

• H01L31/0687 Primary

  Electricity · mapped topic

• H01L31/1844

  Electricity · mapped topic

• H01L31/043

  Electricity · mapped topic

• H01L31/1852

  Electricity · mapped topic

• H01L31/03046

  Electricity · mapped topic