Solid-state imaging device and camera module

Patent metadata

Field	Value
Publication number	US-10014335-B2
Application number	US-201314426810-A
Country	US
Kind code	B2
Filing date	Aug 14, 2013
Priority date	Sep 14, 2012
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

A solid-state imaging device includes: a color filter layer which includes filters disposed above light receiving portions of a semiconductor substrate in one-to-one correspondence; and an infrared cut filter layer having an infrared cut wavelength at which transmittance is 50% or less and which ranges from 610 nm to 710 nm, wherein the filters include a visible light transmission filter which transmits visible light, and an infrared transmission filter having an infrared transmission wavelength at which transmittance is 50% or more and which ranges from 590 nm to 690 nm, and the infrared cut filter layer has an opening above one of the light receiving portions above which the infrared transmission filter is disposed, and is disposed above one of the light receiving portions above which the visible light transmission filter is disposed.

First claim

The invention claimed is:

1. A solid-state imaging device comprising:
a substrate having light receiving portions;
a color filter layer which includes filters disposed above the light receiving portions in one-to-one correspondence; and
an infrared cut filter layer having an infrared cut wavelength at which transmittance is 50% and which is within a range from 610 nm to 710 nm,
wherein the filters include a visible light transmission filter which transmits visible light, and an infrared transmission filter having an infrared transmission wavelength at which transmittance is 50% and which is within a range from 590 nm to 690 nm,
the infrared cut filter layer is disposed above one of the light receiving portions above which the visible light transmission filter is disposed, and has an opening above one of the light receiving portions above which the infrared transmission filter is disposed,
the infrared cut filter layer has transmittance of 50% or less for light in a wavelength range from the infrared cut wavelength to 1000 nm, and
the infrared transmission filter has transmittance of 50% or more for light in a wavelength range from the infrared transmission wavelength to 1100 nm.

2. The solid-state imaging device according to claim 1 ,
wherein the light receiving portions include four light receiving portions adjacently arranged in a 2×2 matrix, and
the color filter layer includes, above the four light receiving portions, four of the filters which are the infrared transmission filter, and three of the visible light transmission filters including a red color filter, a green color filter, and a blue color filter.

3. The solid-state imaging device according to claim 1 ,
wherein the light receiving portions include eight light receiving portions adjacently arranged in a 4×2 matrix,
the eight light receiving portions include two sets of four light receiving portions adjacently arranged in a 2×2 matrix,
the color filter layer includes, above each of the two sets of the four light receiving portions, four of the filters which are the infrared transmission filter, and three of the visible light transmission filters, and
the infrared transmission filters above the two sets of the four light receiving portions included in the eight light receiving portions have different infrared light transmittance characteristics.

4. The solid-state imaging device according to claim 1 ,
wherein the infrared transmission filter includes a color filter material which contains a purple pigment and a yellow pigment as main components.

5. The solid-state imaging device according to claim 1 ,
wherein the infrared cut filter layer includes a multilayer film which is a stack of a layer which includes a silicon oxide film and a layer which includes a titanium oxide film.

6. The solid-state imaging device according to claim 1 ,
wherein the infrared cut filter layer includes a multilayer film which is a stack of a layer which includes a silicon oxide film and a layer which includes a silicon-rich silicon nitride film.

7. A camera module comprising
the solid-state imaging device according to claim 1 .

8. The camera module according to claim 7 , further comprising
a lighting device which emits infrared light simultaneously with visible light.

9. The camera module according to claim 7 ,
wherein the solid-state imaging device includes a signal processing circuit which obtains, through the light receiving portions, at least one of:
a set which includes a red signal, a green signal, a blue signal, and an infrared signal;
a set which includes a red signal, a green signal, a blue signal, and an infrared-containing white signal;
a set which includes a cyan signal, a yellow signal, a green signal, and an infrared-containing white signal;
a set which includes a cyan signal, a yellow signal, and an infrared-containing white signal; or
a set which includes a red signal, a green signal, a blue signal, a first infrared signal, and a second infrared signal, and
converts the obtained at least one set into a set which includes a red signal, a green signal, and a blue signal.

10. The camera module according to claim 7 , further comprising a signal processing circuit which receives, from the solid-state imaging device, at least one of:
a set which includes a red signal, a green signal, a blue signal, and an infrared signal;
a set which includes a red signal, a green signal, a blue signal, and an infrared-containing white signal;
a set which includes a cyan signal, a yellow signal, a green signal, and an infrared-containing white signal;
a set which includes a cyan signal, a yellow signal, and an infrared-containing white signal; or
a set which includes a red signal, a green signal, a blue signal, a first infrared signal, and a second infrared signal, and
converts the received at least one set into a set which includes a red signal, a green signal, and a blue signal.

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Watanabe Hisashi

Classifications

• H04N25/135

  based on four or more different wavelength filter elements · CPC title

• H04N25/133

  including elements passing panchromatic light, e.g. filters passing white light · CPC title

• H04N25/131

  including elements passing infrared wavelengths · CPC title

• H04N23/11

  for generating image signals from visible and infrared light wavelengths · CPC title

• H01L27/1462

  Electricity · mapped topic