Semiconductor device manufacturing method

Patent metadata

Field	Value
Publication number	US-10014197-B2
Application number	US-201715704810-A
Country	US
Kind code	B2
Filing date	Sep 14, 2017
Priority date	Sep 21, 2016
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

The present invention provides a semiconductor device manufacturing method that can sense the atmospheric air leakage more precisely and that can prevent too many defective products from being manufactured.
The semiconductor device manufacturing method according to the embodiment includes the steps of: forming a barrier layer over an interlayer insulating film over a semiconductor substrate; forming a wiring layer over the barrier layer; forming a mask having an opening and configured by a photosensitive organic film over the wiring layer; patterning the wiring layer by etching the wiring layer through the opening; and removing the mask by a plasma processing using an ashing gas. The step of removing the mask includes the step of sensing an atmospheric air leakage that is mixture of the atmospheric air into the ashing gas by measuring an emission intensity of nitrogen in the ashing gas using an ultraviolet photometer.

First claim

What is claimed is:

1. A semiconductor device manufacturing method comprising the steps of:
forming a barrier layer over an interlayer insulating film over a semiconductor substrate;
forming a wiring layer over the barrier layer;
forming a mask having an opening and configured by a photosensitive organic film;
patterning the wiring layer by etching the wiring layer through the opening; and
removing the mask by a plasma processing using an ashing gas,
wherein the step of removing the mask comprises a step of sensing an atmospheric air leakage that is mixture of the atmospheric air into the ashing gas by measuring an emission spectrum of nitrogen in the ashing gas using an ultraviolet photometer.

2. The semiconductor device manufacturing method according to claim 1 ,
wherein the ashing gas contains tetrafluoromethane, oxygen, and water.

3. The semiconductor device manufacturing method according to claim 2 ,
wherein the barrier layer comprises a titanium layer containing substantially no nitrogen.

4. The semiconductor device manufacturing method according to claim 1 ,
wherein the ultraviolet photometer is capable of detecting an ultraviolet within a wavelength range between 336 nm and 376 nm.

5. The semiconductor device manufacturing method according to claim 1 ,
wherein the ultraviolet photometer is capable of detecting an ultraviolet within a wavelength range between 300 nm and 410 nm.

6. The semiconductor device manufacturing method according to claim 1 ,
wherein, at the step of sensing the atmospheric air leakage, the atmospheric air leakage is sensed by calculating an index value from an intensity of the emission spectrum and comparing the index value with a predetermined threshold, and
wherein the index value is a maximum value of the intensity with respect to each processing lot.

7. The semiconductor device manufacturing method according to claim 1 ,
wherein, at the step of sensing the atmospheric air leakage, the atmospheric air leakage is sensed by calculating an index value from an intensity of the emission spectrum and comparing the index value with a predetermined threshold, and
wherein the index value is a time integration value of the intensity with respect to each processing lot.

Assignees

• Renesas Electronics Corp

Inventors

• Terakado Sakae
• Hamaguchi Yohei

Classifications

• H10W20/0633

  using subtractive patterning of the conductive members · CPC title

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P50/287 Primary

  by chemical means · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10W20/40

  Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes · CPC title