Electron source, X-ray source and device using the X-ray source

Patent metadata

Field	Value
Publication number	US-10014148-B2
Application number	US-201514904061-A
Country	US
Kind code	B2
Filing date	Aug 19, 2015
Priority date	Aug 25, 2014
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

The present disclosure is directed to an electron source and an X-ray source using the same. The electron source of the present invention comprises: at least two electron emission zones, each of which comprises a plurality of micro electron emission units, wherein the micro electron emission unit comprises: a base layer, an insulating layer on the base layer, a grid layer on the insulating layer, an opening in the grid layer, and an electron emitter that is fixed at the base layer and corresponds to a position of the opening, wherein the micro electron emission units in the same electron emission zone are electrically connected and simultaneously emit electrons or do not emit electrons at the same time, and wherein different electron emission zones are electrically partitioned.

First claim

The invention claimed is:

1. An electron source, comprising:
one or more electron emission zones, each of which comprises a plurality of micro electron emission units;
wherein the micro electron emission unit comprises: a base layer, an insulating layer on the base layer, a grid layer on the insulating layer, an opening in the grid layer, and an electron emitter that is fixed at the base layer and corresponds to a position of the opening; and
wherein the micro electron emission units in the same electron emission zone are electrically connected, and simultaneously emit electrons or do not emit electrons at the same time;
wherein the opening has a size that is less than the thickness of the insulating layer, and the opening has a size that is less than a distance from the electron emitter to the grid layer.

2. The electron source according to claim 1 , wherein the insulating layer has a thickness less than 200 μm.

3. The electron source according to claim 1 , wherein the grid layer is parallel to the base layer.

4. The electron source according to claim 1 , wherein the electron emitter has a height that is less than half of a thickness of the insulating layer.

5. The electron source according to claim 1 , wherein
the electron emitter is formed to comprise nano-materials, and
the nano-materials is one of single-walled carbon nano-tubes, double-walled carbon nano-tubes, multi-walled carbon nano-tubes, and any combination of thereof.

6. The electron source according to claim 1 , wherein
the base layer comprises a substrate layer and a conducting layer on the substrate layer, and
the electron emitter is fixed at the conducting layer.

7. The electron source according to claim 6 , wherein the electron emitter is composed in a way that: the conducting layer is a film made of nano-materials, and part of nano-material of the nano film at a position corresponding to the opening stands up and is perpendicular to a surface of the conducting layer.

8. The electron source according to claim 1 , wherein a spatial size occupied by the micro electron emission unit along an array arrangement direction is ranged from 1 μm to 200 μm.

9. The electron source according claim 1 , wherein a ratio of a length to a width of the electron emission zone is larger than 2.

10. The electron source according to claim 1 , wherein the electron source comprises at least two different electron emission zones, and wherein the different electron emission zones are electrically partitioned.

11. The electron source according to claim 10 wherein different electron emission zones are electrically partitioned such that: one of the respective base layers of all the electron emission zones are separated from each other, the respective grid layers of all the electron emission zones are separated from each other, and both the respective base layers and grid layers of all the electron emission zones are separated from each other.

12. The electron source according to claim 1 , wherein an emission current of each electron emission zone is larger than 0.8 mA.

13. An X-ray source, comprising:
a vacuum chamber;
an electron source disposed within the vacuum chamber, the electron source comprising:
one or more electron emission zones, each of which comprises a plurality of micro electron emission units,
wherein the micro electron emission unit comprises: a base layer, an insulating layer on the base layer, a grid layer on the insulating layer, an opening in the grid layer, and an electron emitter that is fixed at the base layer and corresponds to a position of the opening, and
wherein the micro electron emission units in a same electron emission zone are electrically connected, and simultaneously emit electrons or do not emit electrons at a same time;
wherein the opening has a size that is less than the thickness of the insulating layer, and the opening has a size that is less than a distance from the electron emitter to the grid layer;
an anode, disposed opposite to the electron source within the vacuum chamber;
an electron source control device, adapted to apply voltage between the base layer and the grid layer of the electron emission zone of the electron source; and
a high voltage power supply, connected to the anode and adapted to provide high voltage to the anode.

14. The X-ray source according to claim 13 , further comprising:
a first connection unit, mounted at a wall of the vacuum chamber and adapted to connect the electron source and the electron source control device; and
a second connection unit, mounted at a wall of the vacuum chamber and adapted to connect the anode and the high voltage power supply.

15. The X-ray source according to claim 13 , wherein the anode has target spot locations that correspond to the respective electron emission zones of the electron source, wherein each of a plurality of different target material are provided at respective target spot locations of the anode.

16. The X-ray source according to claim 13 , wherein the electron source control device executes a control such that the electron emission zones of the electron source emit electrons in a predetermined sequence.

17. The X-ray source according to claim 13 , wherein the electron source control device executes a control such that a preset number of neighboring electron emission zones of the electron source emit electrons in a predetermined sequence.

18. The X-ray source according to claim 13 , wherein a surface of the electron emission zone has an arc shape in a width direction, and electrons emitted from all the micro electron emission units in the electron emission zone focus toward a point along the width direction.

19. The X-ray source according to claim 13 , further comprising:
a plurality of focusing devices, which correspond to the plurality of electron emission zones respectively and are disposed between the electron source and the anode,
wherein the focusing devices enclose all the micro electron emission units in the electron emission zone from above;
wherein the focusing device comprises an electrode or a solenoid.

20. The X-ray source according to claim 13 , wherein the target spots on the anode are arranged in a circle, in an arc, in an enclosed rectangle, in a polyline, or in a section of straight line.

Assignees

• Nuctech Co Ltd

Inventors

• Tang Huaping
• Chen Zhiqiang
• Li Yuanjing
• Wang Yonggang
• Qin Zhanfeng

Classifications

• H01J2235/062

  Cold cathodes · CPC title

• H01J35/14

  Arrangements for concentrating, focusing, or directing the cathode ray · CPC title

• H01J35/065 Primary

  Field emission, photo emission or secondary emission cathodes · CPC title

• H01J35/02 Primary

  Details · CPC title

• H05G1/52

  Target size or shape; Direction of electron beam, e.g. in tubes with one anode and more than one cathode · CPC title